2nd Year Two-Semester B.Sc. Program in Computer Engineering 1435-1436 H (2014-2015) – Term 1 ELC 225-1A Electronic and Digital Circuits - Final Exam -Electronics and Electrical Communications Engineering Department - Cairo University Faculty of Engineering, Giza, EGYPT
2nd Year Two-Semester B.Sc. Program in Computer Engineering 1435-1436 H (2014-2015) – Term 1 ELC 225-1A Electronic and Digital Circuits - Final Exam -Electronics and Electrical Communications Engineering Department - Cairo University Faculty of Engineering, Giza, EGYPT
2nd Year Two-Semester B.Sc. Program in Computer Engineering 1435-1436 H (2014-2015) – Term 1 ELC 225-1A Electronic and Digital Circuits - Final Exam -Electronics and Electrical Communications Engineering Department - Cairo University Faculty of Engineering, Giza, EGYPT
Electronics and Electrical Communications Engineering Department
2nd Year Two-Semester B.Sc. Program in Computer Engineering
1435-1436 H (2014-2015) Term 1 ELC 225-1A Electronic and Digital Circuits - Final Exam 2 Hours Sunday Rabia Al-Awaal 13th, 1436 H (January 4th, 2015) The Exam consists of FIVE Questions Question 1 Electronic Systems (10 minutes) [8 marks] Indicate whether each statement is TRUE or FALSE. Copying the statements to the answer sheet is not required, just write its number (a) to (h), and write either True or False next to it. a. All real engineering systems are interdisciplinary in nature, and involve a wide range of engineering skills and techniques. b. A systematic approach to the design of complex electronic systems looks at the characteristics of the complete system. c. An electronic system can be defined as any closed volume of electronic circuits for which all the inputs and output are known. d. A simple electronic system specification is to describe its inputs and outputs, and describe the input-output relationship. e. The physical nature of a system input or output is independent of where the boundaries of the system are defined. f. The microphone is a typical electronic sensor device. g. A practical multiple-valued digital voltage signal assumes a finite number of discrete voltage levels. h. An actuator is a signal source device in electronic systems. Question 2 Amplification (15 minutes) a. [6 marks] Consider an amplifier circuit with = 100, = 220 k, and = 12 , a voltage source = 15 mV with internal resistance = 20 k connected to its input, and a load resistance = 8 connected to its output. Evaluate the input and output voltages of the amplifier, and the output power dissipated at the load resistance. b. [2 marks] An amplifier circuit has a mid-band gain of 22 dB. What will be its gain in dB at its upper cut-off frequency?
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Question 3 Field-Effect Transistors (40 minutes)
a. [2 marks] Explain the difference between the depletion and enhancement FET, and the difference between the JFET and the MOSFET. b. [2 marks] Sketch the transfer characteristics describing the gate-to-source voltage and the saturation drain-to-source current relationship in n-channel enhancement MOSFETs. c. [6 marks] The n-channel enhancement MOSFET shown in Fig. 1 is designed to have the following parameters: = 100 2 , = 32, and = 0.7 . Assume that the values of the DC voltage sources are: Vaa = 2.5 , and Vdd = 5 , and that = 3 and = 0.4 . Compute the value of the resistances R d and R S . d. Assume that the n-channel enhancement MOSFET in part (c) connected in the amplifier circuit shown in Fig. 2, where 1 = 310 k, 2 = 90 k, = 820 , = 22 F, and = 100 . i. [6 marks] Determine the DC gate-to-source voltage, drain-to-source current, and drain-tosource voltage of the MOSFET. What is the region of operation of the MOSFET? ii. [8 marks] Determine the small-signal input resistance, output resistance, voltage gain and low-frequency cut-off of the amplifier circuit. Question 4 Bipolar Junction Transistors (40 minutes) a. [2 marks] Sketch the transfer characteristics describing the collector-to-emitter voltage and the collector current relationship for various values of constant base current in npn BJTs. b. [8 marks] The npn BJT shown in Fig. 3 is designed to have = 100 and = 100 . Assume that = 1 , and = 100 . Determine the DC collector current, base current, and collector-to-emitter voltage of the BJT. What is the region of operation of the BJT? c. Assume that the npn BJT in part (b) is connected in the amplifier circuit shown in Fig. 4, and that 1 = 31 k, 2 = 9 k, = 820 , = 2.2 ,, and = 22 F. i. [6 marks] Determine the DC collector current, base current, and collector-to-emitter voltage of the BJT. What is the region of operation of the BJT? iii. [8 marks] Determine the small-signal input resistance, output resistance, voltage gain and low-frequency cut-off of the amplifier circuit. Question 5 Operational Amplifiers (15 minutes) a. [4 marks] For the circuit shown in Fig. 5.a, find the transfer function . What is the transfer function if the resistance 2 is replaced by a capacitor ? b. [4 marks] For the circuit shown in Fig. 5.b, derive and expression of as a function of 1and 2. What is the condition for the circuit to function as a difference amplifier?