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I. I NTRODUCTION
20
1.0
Electron
Hole
18
16
10
0.5
14
12
0.0
Drain
Channel
Source
-0.5
Drain
Channel
-3
22
Source
8
-1.0
6
4
-1.5
2
0
-2.0
-2
0.01
0.02
0.03
0.04
0.05
0.06
(a)
0.07
0.01
0.02
0.03
0.04
0.05
0.06
585
-3
0.07
(b)
22
20
1.0
18
0.5
Electron
Hole
16
14
0.0
12
10
8
Drain
Channel
-0.5
Source
-1.0
6
4
-1.5
2
0
Drain
Channel
Source
-2.0
-2
0.01
0.02
0.03
0.04
0.05
0.06
(a)
0.07
0.01
0.02
0.03
0.04
0.05
0.06
0.07
(b)
Fig. 2.
(a) OFF-state electron and hole concentration of JL-TFET.
(b) Energy band diagram of JL-TFET in the OFF state. OFF state (VDS = 1 V,
VCGS = 0 V).
Fig. 3. (a) ON-state electron and hole concentration of JL-TFET. (b) Energy
band diagram of JL-TFET in the ON state. ON state (VDS = 1 V, VCGS = 1 V).
586
(b)
(a)
(b)
Fig. 5. (a) I D versus VGS curve of JL-TFET using TiO2 as gate dielectric
for different isolation thicknesses (in between the Control-Gate and P-Gate) at
VDS = 1 V. (b) I D versus VGS curve of JL-TFET and CM-TFET using TiO2
as gate dielectric with or without inclusion of different model at VDS = 1 V.