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MICROELECTRONICS CORP.
8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Q2
Q1
Features
RDS(on)=38m@VGS=2.5V, ID=5.2A; RDS(on)=25m@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
Applications
Battery Protection
Load Switch
Power Management
Parameter
Ratings
Units
VDS
Drain-Source Voltage
20
VGS
Gate-Source Voltage
12
ID
IDM
PD
*1
30
1.5
0.96
-55 to +150
83
C/W
Tj, Tstg
RJA
*2
8205A
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=250uA
20
VGS=2.5V, ID=5.2A
33
38
VGS=4.5V, ID=6A
20
25
0.6
1.5
Static
BVDSS
RDS(on)
VGS(th)
VDS=VGS, ID=250uA
IDSS
VDS=20V, VGS=0V
uA
IGSS
VGS=12V, VDS=0V
100
nA
gFS
Forward Transconductance
VDS=10V, ID=6A
13
4.86
0.92
Dynamic
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1.4
Ciss
Input Capacitance
562
Coss
Output Capacitance
106
Crss
75
td(on)
8.1
tr
9.95
td(off)
RGEN=6
21.85
5.35
1.7
1.2
tf
nC
pF
ns
VGS=0V, IS=1.7A
Switching
Test Circuit
Switching
Waveforms
ton
VDD
td(on)
tr
toff
td(off)
tf
90%
90%
RD
VIN
VOUT
10%
Output, VOUT
10%
Inverted
VGEN
90%
RG
50%
50%
S
Input, VIN
8205A
10%
Pulse Width
HI-SINCERITY
MICROELECTRONICS CORP.
TSSOP-8L Dimension
DIM
A
A1
b
C
D
E
E1
e
L
S
8205A Marking:
E1
G
Month Code
Year Code
H
8 2 0 5 A
E
Pin Style: 1.D 2.S1 3.S1 4.G1 5.G2 6.S2 7.S2 8.D
Pin1
index
2
Detail F
R 0.15
A1
Min.
Max.
1.20
0.05
0.15
0.19
0.3
0.09
0.20
2.90
3.10
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0o
8o
*: Typical, Unit: mm
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
b
C
Seating
Plane
S
L
0.25
Detail F
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
8205A
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMCs Products
o
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Pb-Free Assembly
o
<3 C/sec
<3 C/sec
Preheat
o
150 C
150 C
200 C
60~120 sec
60~180 sec
100 C
o
o
Tsmax to TL
- Ramp-up Rate
<3 C/sec
<3 C/sec
217 C
183 C
60~150 sec
60~150 sec
o
240 C +0/-5 C
260 C +0/-5 C
10~30 sec
20~40 sec
Ramp-down Rate
<6 C/sec
<6 C/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
Pb devices.
245 C 5 C
10sec 1sec
Pb-Free devices.
260 C 5 C
10sec 1sec
8205A
o
o
o
o