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Introduction:

The purpose of this lab was to teach us how to find the type of
semiconductor using magnets to induce the Hall effect to find if we are
working with n or p type semiconductor, the doping density, and the
mobility of a uniformly doped semiconductor materials. We worked with 2
given Lab View files conductivity.vi and hall.vi with which we will plot
graphs. Conductivity helped us find the conductivity of our sample 9 and the
hall helped when we induced the Hall Effect by placing magnets above and
below. We used Van der Pauw method to determine the conductivity, and
found later the majority carriers Hall mobility.
Procedure:
We used Van der Pauw method to find the conductivity of a sample. We
were given the four point probe with a doped silicon sample labeled a, b, c, d
at the probes corners. LabView program conductivity.vi was used here to
measure the voltage and compute the resistivity. The results from using Van
der Pauw are compared to results from the analysis using the Hall effects
measurements. The Van der Pauw method is commonly used to measure the
carrier density and mobility of semiconductors. After measuring the
resistivity of the material we used the Irwin curves to determine the values
of n or p. We next measured the Hall Effect on the sample, first without the
magnet effect, then with the positive terminal of the magnet and finally the
negative terminal of the magnet. We used the LabView program hall.vi and
keithley SMU. The plots are then generated.

Report:
a. Van der Pauw Conductivity

I_AB V_DC
2.00E-01
1.50E-01
Measured Voltage

1.00E-01
5.00E-02
0.00E+00
0

0 0.010.010.010.01

Source Current

I_AD V_BC
0.2
0.15
Measured Voltage

0.1
0.05
0
0

0.01 0.01 0.01 0.01

Source Current

I_BA V_CD
0.2
0.15
Measured Voltage

0.1
0.05
0
0

0.01 0.01 0.01 0.01

Source Current

I_BC V_AD
2.00E-01
1.50E-01
Measured Voltage

1.00E-01
5.00E-02
0.00E+00
0

0 0.010.010.010.01

Source Current

RAD,BC=1/2(18.4 +18.4 )= 18.4


RBC,AD = 1/2(18.4 +18.4 )= 18.4
Average RBC,DA = 1/2(18.4 +18.4 )= 18.4
b. Part 2 Conductivity Measurements

I_CB V_DA
2.00E-01
1.50E-01
Measured Voltage

1.00E-01
5.00E-02
0.00E+00
0

0.01

0.01

0.02

Source Current

I_CD V_BA
2.00E-01
1.50E-01
Measured Voltage

1.00E-01
5.00E-02
0.00E+00
0

0.01

0.01

Source Current

0.02

I_DA V_CB
2.00E-01
1.50E-01
Measured Voltage

1.00E-01
5.00E-02
0.00E+00
0

0.01

0.01

0.02

Source Current

I_DC V_AB
2.00E-01
1.50E-01
Measured Voltage

1.00E-01
5.00E-02
0.00E+00
0

0.01

0.01

Source Current

RBC,DA = 1/2(18.8 +18.8 )= 18.8


RDC,AB = 1/2(18.8 +18.8 )= 18.8
Average RAB,CD = 1/2(18.4 + 18.8)= 18.6
RAB,CD /RBC,DA =(18.4)/( 18.8 )= .97 1
= t/ln2[(18.4+18.8)/2]*1 = 5.058 cm

0.02

Answers to questions:

There was no indication of joule heating in this sample.


Joule heating occurs when an electrical current is passed through a conductive
material causing it to release heat. It increases the resistance.

Room temperature conductivity of the sample:


= 1/ = 1/5.058 = 0.1977 ( cm)-1

Hall Effect Measurements:


a. Part A Graph:

I_AC V_DB
6.00E-03
5.00E-03

Measured Voltage

4.00E-03

No Magnets

3.00E-03

Positive

2.00E-03

Negative

1.00E-03
0.00E+00
0 0.01 0.01 0.02
Source Current

RH = (VH/Isource) * (t/BZ)
n = RH*n
n = (q * RH)-1
VH = V Measured of Positive mag. terminal V Measured with magnetic field = 0
VH
1.1E-04
2.4E-04
3.5E-04
5.0E-04
6.0E-04
8.0E-04
8.0E-04
1.0E-03
1.1E-03
1.2E-03

ISource
1.00E-03
2.00E-03
3.00E-03
4.00E-03
5.00E-03
6.00E-03
7.00E-03
8.00E-03
9.00E-03
1.00E-02

RH
6.6E-06
7.2E-06
7.0E-06
7.5E-06
7.2E-06
9.6E-06
6.857E-06
7.5E-06
7.333E-06
7.2E-06

n(cm^2/A-s)
1.287E-06
1.4048E-06
1.365E-06
7.125E-06
1.404E-06
1.872E-06
1.337E-06
7.125E-06
1.43E-06
1.404E-05

n(cm^ -3)
9.469E+23
8.681E+23
8.929E+23
8.333E+23
8.681E+23
6.510E+23
9.115E+23
8.333E+23
8.527E+23
8.681E+23

I_BD V_AC
0.00E+00
0 0.01 0.01 0.02
-1.00E-03
-2.00E-03
Measured Voltage -3.00E-03
-4.00E-03

No Magnets
Postive
Negative

-5.00E-03
-6.00E-03
Source Current

VH
-1.1E-04
-2.3E-04
-3.4E-04
-5.0E-04
-6.0E-04
-7.0E-04
-8.0E-04
-9.0E-04
-1.1E-03
-1.2E-03

ISource
1.00E-03
2.00E-03
3.00E-03
4.00E-03
5.00E-03
6.00E-03
7.00E-03
8.00E-03
9.00E-03
1.00E-02

RH
6.6E-06
7.2E-06
7.0E-06
7.5E-06
7.2E-06
7.0E-06
6.857E-06
7.5E-06
7.333E-06
7.2E-06

n
1.287E-06
1.404E-06
1.365E-06
7.125E-06
1.404E-06
1.365E-06
1.337E-06
7.125E-06
1.43E-06
1.404E-06

n
9.469E+23
8.681E+23
8.929E+23
8.333E+23
8.681E+23
6.510E+23
9.115E+23
8.333E+23
8.527E+23
8.681E+23

Discussion of Results:
In the hall voltage, VH was found after calculation to have the same absolute
values for both parts A and B, but in part B we had negative signs for V H but since
we take the magnitude they are then nearly the same we got the values for the Hall
voltage (VH), we had to find the difference between voltages measured with and
without the magnetic field. The doping density we calculated for n type and
majority carrier mobility we calculated for n type based on the data observed when
graphed.

Conclusion:
In this lab experiment, I learned how to use the Van der Pauw method to find the
conductivity and then resistivity for an unknown sample of semiconductors. I

additionally learnt to use the Hall Effect method and Hall voltages by inducing
magnetic fields on our sample and measuring the values to then calculate the
doping density, major carrier mobility in determination of the type(n or p type) of
doping sample we are working with. Our sample was a N type because our graph
showed us the shift of the Hall Voltages to the shift due to non-ideal sample that if
the ve magnetic field was above the no magnetic field and the +ve magnetic field
would be below it would be a n type. This is due to that the samples are
asymmetric and the currents applied to the sample would cause mobility of the
electrons to the hole pairs and it would also be changed due to the orientation of
the magnetic field which we have to choose and set which direction it goes because
a magnetic field leaves from South and enters North so we selected the z axis to
be the direction of our magnetic field and the magnet induces the hall effect on our
sample; we also learned that when we flip the leads it flips the polarity of the
values attained but in actuality when we take the absolute value they result in the
same values because they are the same. Our conductivity measurements allowed us
to gain an average between parts a and b and then calculate the resistance and
conductivity of our sample by using the averages along with the value of F, van der
Pauw correction factor which is ratio of part an over b. For the Hall Effect we
obtained 3 measurements (+ mag, no mag, -mag) and we found our hall voltage by
measuring the difference with and without the magnets and we plotted them and
we then could conclude our sample was an N type semiconductor sample.

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