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Abstract
Resistive-type humidity sensors were fabricated by casting polyvinyl alcohol on comb-shaped electrodes. The impedance of the
PVA film decreased with increasing relative humidity (RH), the best sensing behavior being attained at a film thickness of 10 mm.
The addition of p-styrenesulfonate sodium (PSSD), sodium chloride or m-benzenedisulfonate disodium (MBSD) to the PVA film
was effective for improving the humidity sensitivity. The PSSD-added PVA film (1/15 in molar ratio) gave the best humidity
sensing performance among the films tested. With this film, the impedance measured at 1 kHz and 25C varied by more than four
orders of magnitude in the range of 1595% RH. A post-argon plasma treatment introduced to cross-link the PVA film was found
to improve not only the stability of the film at high humidity, but also the response rate and hysteresis problem without
deteriorating its sensitivity. 1998 Elsevier Science S.A. All rights reserved.
Keywords: Humidity sensors; Polyvinyl alcohol; Plasma treatment
1. Introduction
Various resistive-type humidity sensors using a
polyelectrolyte polymer have been developed so far.
Polyelectrolyte materials are, however, generally soluble
in water and therefore humidity sensors made from
them have a poor durability, particularly against water
or dew drops. When the polyelectrolyte is chemically
bonded on a hydrophobic film, the graft polymer film
will retain its humidity-sensing characteristic while being insoluble in water.
Sakai has proposed a series of graft copolymers
for humidity sensors, such as graft copolymerization
of polystyrenesulfonate [1] or quarterized poly(vinylpyridine) [2,3] onto polytetrafluoroethylene
(PTFE) and the grafting of 2-acrylamido-2-methylpropane sulfonate (AMPS) or 2-hydroxy-3-methacryloxypropyl trimethylammonium chloride (HMPTAC)
on microporous PE by g-ray post-polymerization
method [4,5], UV or catalytic initiation [6]. The disadvantage of the grafted film is that it takes a certain
amount of time for water vapor to penetrate into or out
of the grafted layer and, as a result, the response time
for the detection of humidity change is large.
* Corresponding author. Tel.: +886 2 5925252 (ext. 3414); fax:
+886 2 5936897; e-mail: mryang@mse.ttit.edu.tw
0925-4005/98/$19.00 1998 Elsevier Science S.A. All rights reserved.
PII S0925-4005(98)00134-8
241
2. Experimental
Wx W0
100%
W0
Fig. 1. The effects of electrolyte addition to PVA film (molar ratio 1:15) on water-absorptive properties at 25C.
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Fig. 2. Humidity sensing properties of electrolyte-added PVA films at 25C (molar ratio 1:15).
Fig. 3. Response transients for electrolyte-added PVA films at 25C (molar ratio 1:15).
Fig. 4. Hysteresis curves for electrolyte-added PVA films at 25C (molar ratio 1:15).
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Fig. 6. Stability test for PSSD-added PVA film (molar ratio 1:15) after the post argon plasma treatment (solid lines for the as-prepared and dotted
lines for the argon-plasma treated).
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Fig. 7. Response transients for PSSD-added PVA film (molar ratio 1:15) after the post argon plasma treatment.
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Fig. 8. Hysteresis curves for PSSD-added PVA film (molar ratio 1:15) after the post argon plasma treatment.
4. Conclusions
A PVA-based film mixed with PSSD showed rather
good humidity sensing properties, i.e. steep dependence
of impedance on RH, wide humidity range covered,
quick response and small hysteresis. A plasma posttreatment in argon improved the stability of the film
during storage in dry atmosphere.
Acknowledgements
The authors are indebted to Mr. Hsien-Lung Pan for
the experimental work. The authors are also grateful
for the financial support provided by Tatung Institute
of Technology, Taipei, Taiwan, under the grant B841702-01.
References
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
Biographies
M.R. Yang studied material science at the National
Taiwan University and received his M.S. degree from
the Department of Materials Science and Engineering
in June 1989. Since 1991 he has been employed at the
Tatung Institute of Technology. His research interests
are centered on the sensor device development and
plasma technology.
Ko-Shao Chen was born in Pingtung, Taiwan in
April 1951. He received B.Sc. Chemical Engineering
from Chung Yuan Christian University Taiwan 1973,
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