TSHG8200

Vishay Semiconductors

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES

Package type: leaded

Package form: T-1
Dimensions (in mm): 5
Peak wavelength: p = 830 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: = 10
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 18 MHz
Good spectral matching with CMOS cameras
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition

94 8389

DESCRIPTION
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.

in

APPLICATIONS
Infrared radiation source for operation with CMOS
cameras (illumination)
High speed IR data transmission
Smoke-automatic fire detectors

PRODUCT SUMMARY
COMPONENT

Ie (mW/sr)

(deg)

P (nm)

tr (ns)

180

10

830

20

TSHG8200

Note
Test conditions see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1

TSHG8200
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

Reverse voltage
Forward current

SYMBOL

VALUE

UNIT

VR

IF

100

mA

Peak forward current

tp/T = 0.5, tp = 100 s

IFM

200

mA

Surge forward current

tp = 100 s

IFSM

PV

180

mW

Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient

Tj

100

Tamb

- 40 to + 85

Tstg

- 40 to + 100

t 5 s, 2 mm from case

Tsd

260

J-STD-051, leads 7 mm soldered

on PCB

RthJA

230

K/W

Note
Tamb = 25 C, unless otherwise specified
Document Number: 84755
Rev. 1.2, 02-Jul-09

For technical questions, contact: emittertechsupport@vishay.com

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1

TSHG8200
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero

200

120

160

IF - Forward Current (mA)

PV - Power Dissipation (mW)

180

140
120

RthJA = 230 K/W

100
80
60
40

100
80
RthJA = 230 K/W
60
40
20

20
0

0
0

10

21142

20

30

40

50

60

70 80

90 100

Tamb - Ambient Temperature (C)

21143

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

10

20 30 40

50 60 70 80

90 100

Tamb - Ambient Temperature (C)

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS
PARAMETER

TEST CONDITION

SYMBOL

IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 s

Temperature coefficient of VF
Reverse current

Forward voltage

Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e

MIN.

TYP.

MAX.

VF

1.5

1.8

VF

2.3

IF = 1 mA

TKVF

- 1.8

VR = 5 V

IR

VR = 0 V, f = 1 MHz, E = 0

Cj

IF = 100 mA, tp = 20 ms

Ie

180

V
V
mV/K

10

360

mW/sr

125
120

UNIT

pF

IF = 1 A, tp = 100 s

Ie

1600

mW/sr

IF = 100 mA, tp = 20 ms

50

mW

IF = 100 mA

TKe

- 0.35

%/K

10

deg
nm

Angle of half intensity

Peak wavelength

IF = 100 mA

830

Spectral bandwidth

IF = 100 mA

40

nm

Temperature coefficient of p

IF = 100 mA

TKp

0.25

nm/K

Rise time

IF = 100 mA

tr

20

ns

Fall time

IF = 100 mA

tf

13

ns

IDC = 70 mA, IAC = 30 mA pp

fc

18

MHz

3.7

mm

Cut-off frequency
Virtual source diameter
Note
Tamb = 25 C, unless otherwise specified

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For technical questions, contact: emittertechsupport@vishay.com

Document Number: 84755

Rev. 1.2, 02-Jul-09

TSHG8200
High Speed Infrared Emitting Diode, Vishay Semiconductors
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified

1000

Tamb < 50 C

tP/T = 0.01

1000

Radiant Power (mW)

IF - Forward Current (mA)

0.02
0.05
0.1

10

e-

0.2

100

0.5
100
0.01

0.1
0.1

10

100

tP - Pulse Duration (ms)

16031

100

1.25

e, rel - Relative Radiant Power

1000

100
tP = 100 s
tP/T = 0.001
10

1.0

0.75

0.5

0.25

0
740

1
0
18873

1
3
2
VF - Forward Voltage (V)

900

800
- Wavelength (nm)

16972_1

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 7 - Relative Radiant Power vs. Wavelength

10

20

Ie rel - Relative Radiant Intensity

100

10

40
1.0
0.9

50

0.8

60
70

0.7

- Angular Displacement

30

1000
Ie - Radiant Intensity (mW/sr)

1000

Fig. 6 - Radiant Power vs. Forward Current

Fig. 3 - Pulse Forward Current vs. Pulse Duration

IF - Forward Current (mA)

10

IF - Forward Current (mA)

16971

80

0.1
1
16032

10

100

1000

IF - Forward Current (mA)

Fig. 5 - Radiant Intensity vs. Forward Current

Document Number: 84755

Rev. 1.2, 02-Jul-09

0.6

0.4

0.2

15989

Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com
3

TSHG8200
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters

R 2.49 (sphere)

< 0.7

(4.7)

7.7 0.15

35.5 0.55

8.7 0.3

5.8 0.15

Area not plane

5 0.15

1 min.

+ 0.2
0.6 - 0.1

+ 0.15
0.5 - 0.05

+ 0.15
0.5 - 0.05

technical drawings
according to DIN
specifications

2.54 nom.

6.544-5259.02-4
Issue: 8; 19.05.09
95 10917

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4

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 84755

Rev. 1.2, 02-Jul-09

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Document Number: 91000

Revision: 18-Jul-08

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