IDP15E60

Fast Switching EmCon Diode

Product Summary

Feature
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge

VRRM

600

IF

15

VF

1.5

T jmax

175

PG-TO220-2-2.

Low forward voltage

175C operating temperature
Easy paralleling

Type

Package

Ordering Code

Marking

Pin 1

PIN 2

PIN 3

IDP15E60

PG-TO220-2-2.

Q67040-S4485

D15E60

Maximum Ratings, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Repetitive peak reverse voltage

VRRM

Continous forward current

IF

Value
600

V
A

TC=25C

29.2

TC=90C

19.6

Surge non repetitive forward current

Unit

I FSM

60

I FRM

45

TC=25C, tp=10 ms, sine halfwave

Maximum repetitive forward current

TC=25C, tp limited by Tjmax, D=0.5

Power dissipation

Ptot

TC=25C

83.3

TC=90C

47.2

Operating and storage temperature

Soldering temperature

Tj , Tstg
TS

wavesoldering, 1.6mm (0.063 in.) from case for 10s

Rev.2.1

Page 1

-55...+175
255

C
C

2005-02-24

IDP15E60

Thermal Characteristics
Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics
Thermal resistance, junction - case

RthJC

1.8

Thermal resistance, junction - ambient, leaded

RthJA

62

SMD version, device on PCB:

RthJA

@ min. footprint

62

@ 6 cm 2 cooling area 1)

35

K/W

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics
Reverse leakage current

IR

V R=600V, Tj=25C

50

V R=600V, Tj=150C

1250

Forward voltage drop

VF

IF=15A, T j=25C

1.5

IF=15A, T j=150C

1.5

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.

Rev.2.1

Page 2

2005-02-24

IDP15E60

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Dynamic Characteristics
Reverse recovery time

ns

t rr

V R=400V, IF=15A, diF/dt=1000A/s, Tj=25C

87

V R=400V, IF=15A, diF/dt=1000A/s, Tj=125C

124

V R=400V, IF=15A, diF/dt=1000A/s, Tj=150C

131

Peak reverse current

I rrm

V R=400V, IF = 15A, diF/dt=1000A/s, Tj =25C

13.7

V R=400V, IF =15A, diF/dt=1000A/s, T j=125C

16.4

V R=400V, IF =15A, diF/dt=1000A/s, T j=150C

19.3

Reverse recovery charge

nC

Q rr

V R=400V, IF=15A, diF/dt=1000A/s, Tj=25C

595

V R=400V, IF =15A, diF/dt=1000A/s, T j=125C

995

V R=400V, IF =15A, diF/dt=1000A/s, T j=150C

1104

V R=400V, IF=15A, diF/dt=1000A/s, Tj=25C

3.6

V R=400V, IF=15A, diF/dt=1000A/s, Tj=125C

4.3

V R=400V, IF=15A, diF/dt=1000A/s, Tj=150C

4.5

Reverse recovery softness factor

Rev.2.1

Page 3

2005-02-24

IDP15E60
1 Power dissipation

2 Diode forward current

Ptot = f (TC)

IF = f(TC)

parameter: Tj 175 C

parameter: Tj 175C

90

30

W
A

60

20

IF

P tot

70

50
15
40
30

10

20
5
10
0
25

50

75

100

125

0
25

175

50

75

100

125

TC

175

C
TC

3 Typ. diode forward current

4 Typ. diode forward voltage

IF = f (VF)

VF = f (Tj)

50

V
30A

1.8

VF

IF

1.7
30

20

-55C
25C
100C
150C

1.6
1.5

15A

1.4
1.3

10

7.5A

1.2
1.1

0
0.5

1.5

1
-60

2.5

V
VF

Rev.2.1

Page 4

-20

20

60

100

160
C
Tj

2005-02-24

IDP15E60
5 Typ. reverse recovery time

6 Typ. reverse recovery charge

trr = f (diF/dt)

Qrr =f(diF/dt)

parameter: V R = 400V, T j = 125C

parameter: VR = 400V, Tj = 125 C

500

1450

ns

nC

400

30A

1250

30A
15A
7.5A

300

Qrr

trr

350
1150
15A

1050

250
950
200
850

150

7.5A

750

100

650

50
0
200

300

400

500

600

700

800

550
200

A/s 1000
di F/dt

300

400

500

600

700

800

A/s 1000

diF/dt

7 Typ. reverse recovery current

8 Typ. reverse recovery softness factor

Irr = f (diF/dt)

S = f(diF /dt)

parameter: V R = 400V, T j = 125C

parameter: VR = 400V, Tj = 125C

11

18

16

30A
15A
7.5A

15

13

Irr

14
8
30A

12
7

11

15A

10
6

9
8

7,5A

7
6

5
4
200

Rev.2.1

300

400

500

600

700

800

3
200

A/s 1000
di F/dt

Page 5

300

400

500

600

700

800

A/s 1000
diF/dt

2005-02-24

IDP15E60
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1

IDP15E60

K/W

ZthJC

10 0

10 -1

D = 0.50
0.20
0.10
0.05

10 -2

0.02
0.01

single pulse
10 -3 -7
10

10

-6

10

-5

10

-4

10

-3

10

-2

10

tp

Rev.2.1

Page 6

2005-02-24

IDP15E60

PG-TO-220-2-2
N

A
P

dimensions
[mm]

symbol

D
U
H

V
F
W

max

min

max

9.70

10.10

0.3819

0.3976

15.30

15.90

0.6024

0.6260

0.65

0.85

0.0256

0.0335

3.55

3.85

0.1398

0.1516

2.60

3.00

0.1024

0.1181
0.3701

9.00

9.40

0.3543

13.00

14.00

0.5118

0.5512

17.20

17.80

0.6772

0.7008

4.40

4.80

0.1732

0.1890

0.40

0.60

0.0157

0.0236

1.05 typ.

2.54 typ.

0.1 typ.

4.4 typ.

0.173 typ.

Rev.2.1

1.10

1.40

0.41 typ.

0.0433

0.0551

2.4 typ.

0.095 typ.
0.26 typ.

6.6 typ.

13.0 typ.

0.51 typ.

7.5 typ.

0.295 typ.

[inch]

min

0.00

0.40

0.0000

0.0157

Page 7

2005-02-24

IDP15E60

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Rev.2.1

Page 8

2005-02-24