Irlhs 6242 PBF

IRLHS6242PbF
HEXFET Power MOSFET

VDS
20
VGS
12
V
V
RDS(on) max
11.7
(@VGS = 4.5V)
RDS(on) max
15.5
(@VGS = 2.5V)
ID
(@TC (Bottom) = 25C)
12
T OP VIEW
D 1
D 2
G 3
6 D
5 D
4 S
2mm x 2mm PQFN
Applications
Charge and discharge switch for battery application

System/Load Switch
Features and Benefits
Features
Low RDSon ( 11.7m)
Low Thermal Resistance to PCB ( 13C/W)
Low Profile ( 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRLHS6242TRPbF
IRLHS6242TR2PbF
PQFN 2mm x 2mm

PQFN 2mm x 2mm
results in
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
EOL notice # 259
Max.
Units
Note
Absolute Maximum Ratings

Parameter
VDS
Drain-to-Source Voltage
20
VGS
12
ID @ TA = 25C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70C
ID @ TC(Bottom) = 25C

8.3
22
10
i
i
d
d
12d
18
IDM
Continuous Drain Current, VGS @ 4.5V (Package Limited)

Pulsed Drain Current
PD @TA = 25C
Power Dissipation
PD @TC(Bottom) = 25C
g
Power Dissipation g
TJ
Linear Derating Factor

Operating Junction and
TSTG
Storage Temperature Range
88
1.98
9.6
0.016
-55 to + 150
W
W/C
C
Notes through are on page 2

1
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Submit Datasheet Feedback
December 17, 2013
IRLHS6242PbF
Static @ TJ = 25C (unless otherwise specified)

Min.
Typ.
Drain-to-Source Breakdown Voltage
Parameter
20
Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance
6.8
9.4
11.7
Gate Threshold Voltage
0.5
12.4
0.8
15.5
1.1
Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current
-4.2
1.0
150
IGSS
Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
100
-100
gfs
Qg
Qgs
Forward Transconductance
36
14
VDS = 10V, ID = 8.5A

VDS = 10V
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
1.5
6.3
nC
Qgd
VGS = 4.5V
ID = 8.5A (See Fig.17 & 18)
2.1
5.8
15
Turn-Off Delay Time

Fall Time
19
13
Input Capacitance
Output Capacitance
1110
260
Reverse Transfer Capacitance
180
Min.
Typ.
BVDSS
VDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Total Gate Charge

Gate-to-Source Charge
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
h
h
Max. Units
V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA

VGS = 4.5V, ID = 8.5A
m
VGS = 2.5V, ID = 8.5A
V
VDS = VGS, ID = 10A
mV/C
VDS = 16V, VGS = 0V
A
VDS = 16V, VGS = 0V, TJ = 125C
ed
ed
nA
ns
pF
VGS = 12V
VGS = -12V
VDD = 10V, VGS = 4.5V

ID = 8.5A
d
RG=1.8
See Fig.15
VGS = 0V
VDS = 10V
= 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
Reverse Recovery Time

Reverse Recovery Charge
Qrr
ton
Forward Turn-On Time
Conditions
MOSFET symbol
22
A
(Body Diode)
Diode Forward Voltage
VSD
trr
Max. Units
88
1.2
15
12
23
18
ns
nC
showing the
integral reverse
p-n junction diode.

TJ = 25C, IS = 8.5A , VGS = 0V
d
d
TJ = 25C, IF = 8.5A , V
di/dt = 210A/s e
DD
= 10V
Time is dominated by parasitic Inductance
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
g
g
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
Typ.
f
f
Max.
13
94
63
46
Units
C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Package is limited to 12A by die-source to lead-frame bonding technology.
Pulse width 400s; duty cycle 2%.
When mounted on 1 ich square copper board.
R is measured at T J of approximately 90C.
For DESIGN AID ONLY, not subject to production testing.
Calculated continuous current based on maximum allowable junction temperature.
December 17, 2013
IRLHS6242PbF
100
100
10
BOTTOM
0.1
1.4V
BOTTOM
10
60s PULSE WIDTH

1
10
0.1
100
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics

100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 150C
TJ = 25C
10
VDS = 10V
60s PULSE WIDTH
1.0
ID = 8.5A
VGS = 4.5V
1.4
1.2
1.0
0.8
0.6
1.0
1.5
2.0
2.5
3.0
3.5
-60 -40 -20 0
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics

10000
20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 8.5A
C oss = C ds + C gd
C, Capacitance (pF)
Tj = 150C
0.01
Ciss
1000
Coss
Crss
12.0
VDS= 16V
VDS= 10V
10.0
VDS= 4.0V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

3
60s PULSE WIDTH
1.4V
Tj = 25C
0.1
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
TOP
TOP
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

December 17, 2013
IRLHS6242PbF
1000
ISD, Reverse Drain Current (A)
100
T J = 150C
T J = 25C
10
OPERATION IN THIS AREA

LIMITED BY R DS(on)
100
100sec
10msec
10
Limited by
Wire Bond
1
Tc = 25C
Tj = 150C
Single Pulse
VGS = 0V
1.0
DC
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
25
VGS(th), Gate threshold Voltage (V)
1.6
Limited By Package
20
ID, Drain Current (A)
1msec
15
10
1.4
1.2
1.0
ID = 25A
ID = 250A
ID = 1.0mA
ID = 1.0A
0.8
0.6
0.4
0.2
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (C)
25
50
75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) C/W
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

4
December 17, 2013
IRLHS6242PbF
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on) , Drain-to -Source On Resistance (m)
25
ID = 8.5A
20
15
T J = 125C
10
TJ = 25C
5
0
10
12
14
30
25
20
Vgs = 2.5V
15
Vgs = 4.5V
10
5
16
10
20
30
40
50
60
70
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
600
70
ID
TOP
2.2A
4.3A
BOTTOM 8.5A
60
50
500
Single Pulse Power (W)
EAS , Single Pulse Avalanche Energy (mJ)
35
40
30
20
400
300
200
100
10
0
1E-5
0
25
50
75
100
125
150
1E-4
Starting T J , Junction Temperature (C)
Driver Gate Drive
P.W.
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
D.U.T. ISD Waveform

Reverse
Recovery
Current
V DD
D=
Period
RG
1E+0
VGS=10V
Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
1E-1
Fig 15. Typical Power vs. Time
1E-2
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T
1E-3
+
-
Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
5
December 17, 2013
IRLHS6242PbF
Id
Vds
Vgs
L
VCC
DUT
1K
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V(BR)DSS
15V
DRIVER
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
I AS
0.01
tp
Fig 18a. Unclamped Inductive Test Circuit
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
-V DD
V10V
GS
Pulse Width 1 s
Duty Factor 0.1
Fig 19a. Switching Time Test Circuit
Fig 18b. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
td(off)
tf
Fig 19b. Switching Time Waveforms
December 17, 2013
IRLHS6242PbF
PQFN 2x2 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 2x2 Outline Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
December 17, 2013
IRLHS6242PbF
PQFN 2x2 Outline Tape and Reel
December 17, 2013
IRLHS6242PbF
Qualification information
Industrial
Qualification level
Moisture Sensitivity Level
(per JE DEC JES D47F

PQFN 2mm x 2mm
RoHS compliant
guidelines )
MS L1
(per JE DEC J-S T D-020D )

Yes
Qualification standards can be found at International Rectifiers web site

http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
12/17/2013 Updated Qual level from "Consumer" to "Industrial" on page 1, 9
Updated data sheet with new IR corporate template
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
December 17, 2013

Irlhs 6242 PBF

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Irlhs 6242 PBF

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Available Formats

IRLHS6242PbF

HEXFET Power MOSFET

2mm x 2mm PQFN

Charge and discharge switch for battery application

Orderable part number

PQFN 2mm x 2mm

EOL notice # 259

Absolute Maximum Ratings

Continuous Drain Current, VGS @ 4.5V

Continuous Drain Current, VGS @ 4.5V

Continuous Drain Current, VGS @ 4.5V (Package Limited)

Linear Derating Factor

Storage Temperature Range

Notes through are on page 2

www.irf.com 2013 International Rectifier

Submit Datasheet Feedback

December 17, 2013

Static @ TJ = 25C (unless otherwise specified)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Gate-to-Source Forward Leakage

VDS = 10V, ID = 8.5A

Turn-Off Delay Time

Reverse Transfer Capacitance

Total Gate Charge

mV/C Reference to 25C, ID = 1mA

VDD = 10V, VGS = 4.5V

Continuous Source Current

Reverse Recovery Time

Forward Turn-On Time

p-n junction diode.

Time is dominated by parasitic Inductance

www.irf.com 2013 International Rectifier

Submit Datasheet Feedback

December 17, 2013

60s PULSE WIDTH

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

ID, Drain-to-Source Current (A)

V DS, Drain-to-Source Voltage (V)

V DS, Drain-to-Source Voltage (V)

-60 -40 -20 0

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

20 40 60 80 100 120 140 160

T J , Junction Temperature (C)

VGS, Gate-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

60s PULSE WIDTH

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

www.irf.com 2013 International Rectifier

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

December 17, 2013

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

OPERATION IN THIS AREA

VSD, Source-to-Drain Voltage (V)