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D 06/03
IR25XB..H
25.0 Amps Single Phase Full Wave
Bridge Rectifier
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (2500 VRMS)
High Thermal Conductivity
IO(AV) = 25A
VRRM = 200/ 800V
Description
These IRXB..H Series of Single Phase Bridges
consist
IR25XB..H
Units
25
@ TC
100
@50Hz
400
@ 60Hz
420
@ 50Hz
800
A 2s
@ 60Hz
732
A 2s
200 to 800
IO
IFSM
I2t
VRRM
range
TJ
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- 55 to 150
IR25XB..H
IR25XB..H
Bulletin I27127 rev. D 06/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IR25XB..H
200
400
600
800
140
280
420
560
275
500
725
900
5
5
5
5
250
250
250
250
Forward Conduction
Parameters
IR25XB..H
Unit
A
Conditions
IO
25
IFSM
400
t = 10ms
420
t = 8.3ms
TJ = 150C
800
initial TJ = TJ max
732
VFM
IRM
VRRM
A2s
t = 10ms
t = 8.3ms
0.975
5.0
250
200 to 800
Tstg
temperature range
RthJC
IR25XB..H
-55 to 150
Unit
Conditions
1.0
C/ W
22
C/ W
7.4 (0.26)
g (oz)
1.0
9.0
Nm
Lb.in
junction to case
RthJA
Thermal resistance,
junction to ambient
Approximate weight
Mounting Torque
Bridge to Heatsink
Note (1): Bridge mounted on Aluminun heat sink, use silicon thermal compound for heat transfer and bolt down
using 3mm screw
(2): Bridges mounted in free air without heatsink.
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IR25XB..H
Bulletin I27127 rev. D 06/03
IR
25
XB
08
International Rectifier
10-7.5mm spacing
H = High Surge
Outline Table
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IR25XB..H
150
1000
Instantaneous Forward Current (A)
140
130
180
(Rect)
120
110
180
(Sine)
100
90
80
0
10
15
20
25
100
Tj = 150C
10
Tj = 25C
1
0.1
tp = 400s
0.01
30
50
180
(Sine)
180
(Rect)
30
20
10
Tj = 150C
0
0
10
15
20
1.5
2.5
40
0.5
25
450
400
350
300
250
200
150
100
1
10
100
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 06/03
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