PD - 9.

1674A

IRFIZ34E
HEXFET Power MOSFET
l
l
l
l
l

Advanced Process Technology

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated

VDSS = 60V
RDS(on) = 0.042

ID = 21A

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw

Max.

Units

21
15
100
37
0.24
20
110
16
3.7
5.0
-55 to + 175

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RJA

Junction-to-Case
Junction-to-Ambient

Typ.

Max.

Units

4.1
65

C/W
9/22/97

IRFIZ34E
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
60

2.0
6.5

Typ.

0.052

7.0
49
31
40

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss
C

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance

700
240
100
12

V(BR)DSS
V(BR)DSS/TJ

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, I D = 1mA
0.042

VGS = 10V, I D = 11A

4.0
V
VDS = VGS, I D = 250A

S
VDS = 25V, ID = 16A
25
VDS = 60V, VGS = 0V
A
250
VDS = 48V, VGS = 0V, TJ = 150C
100
V GS = 20V
nA
-100
VGS = -20V
34
ID = 16A
6.8
nC VDS = 44V
14
VGS = 10V, See Fig. 6 and 13

VDD = 28V

I D = 16A
ns

RG = 18

RD = 1.8, See Fig. 10

Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

V
DS = 25V
pF

= 1.0MHz, See Fig. 5

= 1.0MHz

Source-Drain Ratings and Characteristics

IS
ISM

VSD
t rr
Q rr
t on

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
21

showing the
A
G
integral reverse
100
p-n junction diode.
S
1.6
V
TJ = 25C, IS = 11A, VGS = 0V
57
86
ns
TJ = 25C, IF = 16A
130 200
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

VDD = 25V, starting TJ = 25C, L = 610H

t=60s, =60Hz

RG = 25, IAS = 16A. (See Figure 12)

ISD 16A, di/dt 420A/s, VDD V(BR)DSS,

TJ 175C

Uses IRFZ34N data and test conditions

IRFIZ34E
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V

I , D ra in -to -S o u rce C u rre n t (A )

D

I , D ra in -to -S o u rce C u rre n t (A )

D

100

10

4 .5V
2 0 s PU LSE W ID TH
TC = 2 5C

1
0.1

10

100

10

4 .5V

20 s PU L SE W ID TH
T C = 175 C

0.1

100

Fig 1. Typical Output Characteristics

R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )

I D , D r ain- to-S ourc e C u rre nt (A )

2.4

TJ = 2 5 C
TJ = 1 7 5 C

10

VD S = 2 5 V
2 0 s PU L SE W ID TH
5

V G S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

10

100

Fig 2. Typical Output Characteristics

100

V D S , Drain-to-Source V oltage (V)

V D S , D rain-to-S ource V oltage (V )

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP

TOP

10

I D = 26 A

2.0

1.6

1.2

0.8

0.4

VG S = 1 0V

0.0
-60 -40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T emperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFIZ34E
V GS
C iss
C rss
C is s C oss

C , C a p a c ita n c e (p F )

1000

=
=
=
=

20

0V,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd

V G S , G a te -to -S o u rc e V o lta g e (V )

1200

I D = 1 6A
V DS = 4 4V
V DS = 2 8V

16

800

C o ss

12

600

400

C rs s
200

0
10

FO R TES T C IR CU IT
SEE FIG U R E 13

A
1

100

10

V D S , Drain-to-Source V oltage (V)

30

A
40

Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)
I D , Drain Current (A)

IS D , R e ve rs e D ra in C u rre n t (A )

20

100

100

TJ = 175 C
TJ = 25 C

10

10us

100us
10
1ms

VG S = 0 V

1
0.4

0.8

1.2

1.6

V S D , S ource-to-Drain Voltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

2.0

TC = 25 C
TJ = 175 C
Single Pulse

1
1

10ms
10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

IRFIZ34E
RD

VDS
24

VGS

20

ID , Drain Current (A)

D.U.T.

RG

-VDD

10V

16

Pulse Width 1 s
Duty Factor 0.1 %

12

Fig 10a. Switching Time Test Circuit

8

VDS
90%

0
25

50

75

100

125

TC , Case Temperature

150

175

( C)

10%
VGS
td(on)

Fig 9. Maximum Drain Current Vs.

Case Temperature

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

10

D = 0.50
1

0.20
0.10
0.05

0.1

0.02
0.01

PDM
SINGLE PULSE
(THERMAL RESPONSE)

t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.01
0.00001

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFIZ34E

D.U.T.
RG

+
V
- DD
IAS
tp

0.01

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

250

L
VDS

TOP
BO TTOM

200

150

100

50

V D D = 2 5V
25

VDD
VDS

ID
6 .5A
11A
16 A

50

A
75

100

125

150

175

Starting TJ , Junction T emperature (C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K
12V

.2F

QG

.3F

10 V
QGS

D.U.T.

QGD
VGS

VG

3mA

IG

Charge

Fig 13a. Basic Gate Charge Waveform

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

+
V
- DS

IRFIZ34E
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

P.W.

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Period

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

ISD

IRFIZ34E
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)

3.40 (.133 )
3.10 (.123 )

4.8 0 (.189)
4.6 0 (.181)

-A 3.70 (.145)
3.20 (.126)

16 .0 0 (.630)
15 .8 0 (.622)

2 .80 (.110)
2 .60 (.102)
LE AD A S SIGN M E N T S
1 - GA TE
2 - D R AIN
3 - SO U R C E

7 .10 (.280)
6 .70 (.263)

1.15 (.04 5)
M IN .

N O T ES :
1 D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982

3
2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-B-

13 .7 0 (.540)
13 .5 0 (.530)
C

A
1.40 (.05 5)
3X
1.05 (.04 2)

0.9 0 (.035)
3X 0.7 0 (.028)
0.25 (.010 )

3X
M

A M

0.48 (.019)
0.44 (.017)

2.85 (.112 )
2.65 (.104 )

2 .54 (.100)
2X

M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
A-B -C -D = 4.80 (.189 )

Part Marking Information

TO-220 Fullpak
E XAM P LE : TH IS IS A N IR FI8 4 0 G
W ITH ASS EM B LY
L O T C O D E E4 0 1

IN TE R N AT IO N AL
R E C TIFIER
L O GO

P AR T N U M BE R
IR FI8 4 0G
E 40 1 92 4 5

AS SE MB L Y
LOT CO DE

D AT E C O D E
(YYW W )
YY = YE AR
W W = W E EK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/97