CM600HA-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Single IGBTMOD
H-Series Module
600 Amperes/1200 Volts

A
C
Y - THD (2 TYP.)

P
D

E
U

Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.

V - THD
(2 TYP.)
Q

X - DIA.
(4 TYP.)

G
Z
J

Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking

E
G

Outline Drawing and Circuit Diagram

Dimensions

Inches

Dimensions

Inches

4.33

Millimeters
110.0

0.69

Millimeters
17.5

3.15

80.0

0.61

15.5

3.660.008

93.00.25

0.51

13.0

2.440.008

62.00.25

0.49

12.5

1.57

40.0

0.45

11.5

1.42 Max.

36.0 Max.

0.43

11.0

1.14

29.0

0.35

9.0

1.00 Max.

25.5 Max.

M8 Metric

M8

0.96

25.0

0.28

7.0

0.94

24.5

0.256 Dia.

Dia. 6.50

0.83

21.0

M4 Metric

M4

0.71

18.0

0.12

3.04

Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM600HA-24H
is a 1200V (VCES), 600 Ampere
Single IGBTMOD Power Module.
Type

Current Rating
Amperes

VCES
Volts (x 50)

CM

600

24

193

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-24H
Single IGBTMOD H-Series Module
600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 C unless otherwise specified

Ratings

Symbol

CM600HA-24H

Units

Junction Temperature

Tj

40 to 150

Storage Temperature

Tstg

40 to 125

Collector-Emitter Voltage (G-E SHORT)

VCES

1200

Volts

Gate-Emitter Voltage

VGES

20

Volts

IC

600

Amperes

ICM

1200*

Amperes

Collector Current
Peak Collector Current
Diode Forward Current

IF

600

Amperes

Diode Forward Surge Current

IFM

1200*

Amperes

Power Dissipation

Pd

4100

Watts

95

in-lb

Max. Mounting Torque M8 Terminal Screws

Max. Mounting Torque M6 Mounting Screws

26

in-lb

Module Weight (Typical)

560

Grams

VRMS

2500

Volts

V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Static Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

2.0

mA

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

0.5

Gate-Emitter Threshold Voltage

VGE(th)

IC = 60mA, VCE = 10V

4.5

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 600A, VGE = 15V

2.5

3.4**

Volts

IC = 600A, VGE = 15V, Tj = 150C

2.25

Volts

Total Gate Charge

QG

VCC = 600V, IC = 600A, VGS = 15V

3000

nC

Diode Forward Voltage

VFM

IE = 600A, VGS = 0V

3.5

Volts

Min.

Typ.

Max.

Units

120

nF

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Input Capacitance

Cies

Output Capacitance

Coes

Reverse Transfer Capacitance

Cres

Resistive

Turn-on Delay Time

td(on)

Load

Rise Time

Switching

Turn-off Delay Time

Times

Fall Time

Test Conditions

VGE = 0V, VCE = 10V, f = 1MHz

42

nF

24

nF

300

ns

tr

VCC = 600V, IC = 600A,

700

ns

td(off)

VGE1 = VGE2 = 15V, RG = 2.1

450

ns

350

ns

tf

Diode Reverse Recovery Time

trr

IE = 600A, diE/dt = 1200A/s

250

ns

Diode Reverse Recovery Charge

Qrr

IE = 600A, diE/dt = 1200A/s

4.46

Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified

194

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Rth(j-c)

Per IGBT

0.035

C/W

Thermal Resistance, Junction to Case

Rth(j-c)

Per FWDi

0.06

C/W

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

0.035

C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-24H
Single IGBTMOD H-Series Module
600 Amperes/1200 Volts

OUTPUT CHARACTERISTICS
(TYPICAL)

VGE = 20V

800

11

600
10

400

200

1000
800
600
400
200
0

10

0
0

12

16

20

200

400

600

800 1000 1200

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)

CAPACITANCE VS. VCE

(TYPICAL)

104

10

103
Tj = 25C

IC = 1200A

IC = 600A

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

Tj = 25C

103

102

102

Cies

101

Coes

VGE = 0V
f = 1MHz

IC = 240A

101

0
8

12

16

20

0.8

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

3.2

103

td(off)
t d(on)
tf

102
tr

VCC = 600V
VGE = 15V
RG = 2.1
Tj = 125C

101
101

2.4

102
COLLECTOR CURRENT IC, (AMPERES)

4.0

100

103

102

102

Irr

di/dt = -1200A/sec
Tj = 25C

101
101

102
EMITTER CURRENT, IE, (AMPERES)

101

102

GATE CHARGE, VGE

103

t rr

Cres

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

REVERSE RECOVERY TIME, t rr, (ns)

103

1.6

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

101
103

20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

100
10-1

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

SWITCHING TIME, (ns)

VGE = 15V
Tj = 25C
Tj = 125C

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

VCE = 10V
Tj = 25C
Tj = 125C

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

1000

1200

12

15

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

1200
Tj = 25oC

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

TRANSFER CHARACTERISTICS
(TYPICAL)

IC = 600A

16

VCC = 400V
VCC = 600V

12

0
0

800 1600 2400 3200 4000 4800

GATE CHARGE, QG, (nC)

195

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

10-3
101

100

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
10-1
100

Single Pulse
TC = 25C
Per Unit Base = R th(j-c) = 0.03C/W

10-1

10-1

10-2

10-2

10-3
10-5
TIME, (s)

196

101

10-4

10-3
10-3

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

Zth = Rth (NORMALIZED VALUE)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

Zth = Rth (NORMALIZED VALUE)

CM600HA-24H
Single IGBTMOD H-Series Module
600 Amperes/1200 Volts

10-3
101

100

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100

101

Single Pulse
TC = 25C
Per Unit Base = R th(j-c) = 0.06C/W

10-1

10-1

10-2

10-2

10-3
10-5
TIME, (s)

10-4

10-3
10-3