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Fall 2011
VDD
RD
Vref
R1
(a)
I = I D1 +
Vref
R1 + R2
, I D1
M1
1
W
2
= n C ox (VGS 1 VThN )
2
L 1
W
= 1
R1
VGS1 = VGS1 I D1 = 1
V ref = 1 +
2
R2
= 1+ 1
R2
R2
n C ox
VDD Vref
V Vref
I = DD
RD
RD
V ref
V
ThN
= 1 ref VThN
2
R1 + R2
Vref
(1)
By solving (1), Vref can be found with respect to other circuit parameters.
To simplify (1), if R1 + R2 is large, then
VDD Vref
RD
VDD Vref
RD
V
1 ref VThN
2
2
1 Vref
2
+
V
V
V
ThN
ref
ThN
2
2 2
2 2
2
VDD
V = Vref2 2VThNVref + 2VThN
1RD
1RD ref
2
Vref + 2 VThN
Vref2 2 VThN
VDD
1RD
1RD
2b
V ref = b b 2 c
ref
(b) S VDD
=
V DD V ref
V ref V DD
Vref Vref
c
=
VDD
c VDD
b is independent of VDD
c
2 2
=
VDD 1R
Vref
VDD 2 2
1
VDD 2
1
1
Vref
=
SVDD =
2
2
2
c
Vref 1R 2 b c
Vref 1R
2 b c
b c
(c)
R
1 V ref
Vref = 1 + 1 VGS 1 = VGS 1 TC F (V ref ) =
V ref T
R2
Vref
V
1
L VDD
= GS = VThN TCVThN
2 1
2 W1 RD nCox
T
T
Vref
2 1RD RD T
1 RD 1.5
T
RD T
1 .5
VGS 3 = VGS1
1
I
=
I
D 3 2 D1
6
W W 1
= =
L 3 L 1 2 2.4
6
W
W
= =
L 4 L 3 2 .4
VGS 5
VDD
5 A
5 A
I out
1 W
1 6
W
= 2V + VThN = =
L 5 4 L 3 4 2 .4
(W L) = 12 2.4
M4
M5
3
W
=
L 5 4 .8
M2
(W L) = 12 2.4
(b) Simulation:
M3
VSS
M1
(c) Simulation
It can be seen that the hand calculations in this case are about 47% off the target value! Why?
Do you remember what we said in class about the effect of lateral diffusion and oxide encroachment in currentscaling mirrors, which do not have the same W/L on both sides?
One way to get around this problem is to change (W/L)3 to compensate for these effects between M3 and M1:
1
= 38M
26.32 10 9
6
7 .8
W
Change from
to
to get I out 10 A
2 .4 2 .4
L 3
7 .8
W
I out 9.85A
=
L 3 2 .4
1
= 167 M , Vout (min ) = 2.1V VSS + 2V
5.97 10 9
But a better way to scale M3 current by a factor of 2 is to replace M1 with two NMOS transistors in parallel,
with the same size as M3 in order to scale ID3 with by an exact factor of 2.
3. In the following current source (a different version of regulated cascode) calculate Rout and Vout(min) when:
A = Gain of the OpAmp
(a) M1 and M2 are in saturation.
Rout
Vout
Bias 2
M2
Vout Vd 1
(1)
rds 2
Bias1
M1
AV d 1
V gs1
G1
g m 2V gs 2
rds 2
V d1
Bias1
I out
rds1
Vout
r
= I out 1 + g m 2 Ards1 + ds1 = I out (2 + g m 2 Ards1 )
rds 2
rds 2
ro = rds1 rds 2
rds1
1
rds 2
I out
I out
+
AV d 1
g m 2V gs 2
V gs1
rds 2
V d1
M 1
I out
R1
Bias1
V
W
I D1 = n C ox V GS1 VThN DS1 V DS1
2
L 1
I D1
W
= nCox (VGS1 VThN VDS1 ) = 1 / R1
VDS1
L 1
VGS1 = VBias1
W
R1 = nCox (VBias1 VBias 2 VThN )
L 1
Now the same calculations that we did for part (a) will result in:
Rout = rds 2 (2 + g m 2 AR1 ) Ag m 2 rds 2 R1
VDS1 VBias 2
=
, and R1 is controlled by VBias1 and
R1
R1
W
L 1
4. (a) Design a regulated cascode current sink of 1A in AMI-0.5m process (use hand calculation and the
topology shown in Fig. Ex20.8 of Baker in page 454). VDD = 5V, VSS = 0
(b) Simulate the circuit and fine tune the resistor (R) to get Iout = 1A.
(c) Sweep Vout from 0 to 5V and draw Iout vs. Vout curve. Find Rout and Vout(min).
out
(d) For Vout = 2.5V, sweep VDD from 0 to 5V and draw Iout vs. VDD curve. Find SVI DD
.
(a)
Since this is a design problem we can start with any ratio transistor size and change it later if needed.
7
12
W
Assuming =
L 1 2.4
VGS 1 =
2 I D1
+ VThN
W
nCox
L 1
I D1 = 1A ,
R1 =
1
10 6
n C ox = 57.1 A 2 , VThN = 0.74V VGS1 =
V
2
57.110 6 12
This resistor value is too large for an IC design, unless it is an N-well resistor or if you have access to highresistive poly.
W
W
= = 12 2.4
L 2 5 L 1
1
n C ox
57.1
2
=
= 3.12 3 choose PMOS transistors 3 times wider than NMOS to provide the same g m
1
18.3
p C ox
2
(this is not necessary, but it gives a rough size for PMOS transistors)
48
W W
= =
L 6 L 7 2 .4
If supply level is small, M 6 and M 7 should be as wide as possible to reduce VGS 6 & VGS 7
(b) Simulation: R = 4.2 M
(c) Vout (0V ~ 5V ) : Vout (min) 0.8V VTHn + V , Rout > 200G!
10
Since the original Iref is not generated by a self-bias, supply independent reference generator, Iout is very
out
sensitive to VDD variations and SVI DD
1.
11