ASSIGNMENTS DISCUSSION (BE REMEDIAL CLASSES)

BASIC ELECTRONICS SHORT QUESTIONS

Q. 1-Define mobility and conductivity of an intrinsic semiconductor.
2- Distinguish between avalanche and Zener break down.
3-Distinguish metals from semiconductors with reference to fermi level.
4-Why FET is called unipolar transistor? What is the term field effect?
5-Derive an expression for amplification factor of FET.
6-How Zener diode is used in a voltage regulator?
7-What is the difference between analog and digital signals?
8-Define CMRR and Slew rate of OPAMP.
9-Draw the equivalent circuit of an ideal OP-AMP. Mention two applications
of OPAMP.
10-An amplifier has a voltage gain of 100 V/V and a current gain of 1000 A/A.
Express the voltage and current gains in decibel and find the power gain.
11-Find the output power of an amp lifer, if the power gain of amplifier is 20dB and
the input power of the amplifier is 25 mW.
12-For a reverse biased diode, does the transition region increase or decrease in
width? Explain.
13-Show the voltage follower circuit using a J-FET.
14-How current flows in a semiconductor is different from that of a metal?
15-Define peak reverse voltage.
16-Sketch the JFET drain characteristics with VGS=0. Show ohmic and pitch-off
regions.
17-What are the ideal characteristics of an OPAMP?
18-Define the slew rate and CMRR.
19-Mention three applications of OPAMP.
20-What is the difference between analog vs digital signals. Define bandwidth.
21-Draw the schematic symbol of an operational amplifier indicating the various
terminals.
22-What is ripple factor ? What is the value for a half-wave and full-wave rectifier?
23-Draw and explain the V-I characteristics of a PN junction.
24-Define a mathematical tool to find out the frequency spectrum of a signal.
25. Calculate the intrinsic carrier density ni for silicon at T=50 K.
26. Consider an n-type silicon for which the dopant concentration ND=1017/cm3.Find
the electron and hole concentrations at T=300 K.
27. Differentiate between drift current and diffusion current.
28. Write the Einstein relationship related to mobility of charge carriers.
29.Define junction built-in voltage of pn-junction.
30.Define the mean transit time of the junction.
31.Draw the piecewise-linear model of the diode forward characteristic.
32. Draw the circuit diagram of half-wave rectifier,full-wave rectifiers and the Peak
rectifier.
33. Differentiate between Clipper and Clamper circuit.

34. Draw a circuit diagram for a Voltage Doubler.

35. Write different uses of photodiodes and LEDs.
36.Write the different BJT modes of operation.
37.Sketch the Ebers-Moll(EM) model of the npn transistor.
38. Transistos of a certain type are specified to have values in the range 50 to 150.Find
the range of their values.
39. How BJT acts as an Amplifier?
40. How BJT acts as a Switch ?
41. Distinguish between AC load line and DC load line.
42. Derive the expression for collector current for a CE transistor.
43.Explain with suitable diagrams the difference between self bias and fixed bias.
44.Why biasing is done in in a Bipolar Junction Transistor ?
45.What is meant by small signal analysis of transistor ?
46.What is load line ? How it is used to calculate the operating point ?
47.Define the term hie,hfe,hoe and hre of a transistor.
48.What is a clamber circuit ? Draw the circuit diagram of a positive clamper showing
their output waveforms.
49.DefineOver Drive Factor and write its significance.
50.Draw the output characteristics of CE configuration showing different operating
regions along with necessary conditions.
51.Write down the application of CRO.
52.What is Lissajous patterns in a CRO ?
53.What are functions of sweep trigger and sweep generator in CRO ?
54.Determine the number of cycles of 1 KHz sinusoidal signal as viewed on an
oscilloscope when the sweep frequencies are 2 KHz and 500 Hz.
55.How a waveform is displayed in a Cathode Ray Oscilloscope ?
56.A Lissajous pattern on a CRO has 4 horizontal tangencies and vertical tangencies. The
frequency of horizontal input is 1 KHz.What is the frequency of the vertical input ?
57.Write down the advantages of a negative feedback amplifier.
58.Why voltage series feedback is most commonly used in amplifiers ?
59.What is Barkhausen criterion ?
60.Compare the advantages and disadvanges between cetre-tapped and bridge type fullwave rectifier.
61.Compare static-RAM and dynamic-RAM with respect to their speed, volume of data
storage, size and cost.
62.What is piezoelectric effect ? Write the use of crystal oscillator.
63.What do you mean by diffusivity and mobility of holes. ?
64. Draw the transfer characteristics of an Inverter and also define Noise Margin.
65. Draw the circuit diagram of a voltage follower and also write its two application.
66. Write the effect of temperature on semiconductor materials. Explain through related
equation if any.
67. Draw the circuit of a double ended clipper using ideal p-n diodes which limits the
outputs from +3 V to -3V for sinusoidal input of amplitude 5V.
68. Draw the simplified hybrid- model of BJT amplifier.

69. Voltage gain of an amplifier without feedback is 60 dB. It increases to 40 dB with

feedback. Calculate the feedback factor.
70. State the function of attenuator in CRO.
71. Find the percentage increase in reverse saturation current of a PN junction diode if the
temperature is increased from 250 C to 500 C ?
72. A signal is represented by y=5 sin(628t+30).find the frequency, amplitude and initial
phase of the signal?
73.Binary number system is used in digital electronic cicuits.Why octal,decimal or
hexadecimal number systems are not used in circuit levels.
74. Prove that A AB A B
75.Design A B C using basic gates only.
76.Simplify the Boolean expression y AB AC ABC .
77. ( i) convert (275.625)10 = ( )2
(ii) Subtract 11101 from 1101 using complement method.
78.What is universal gate? Why the name is so? Justify your answer through example
79. Perform the subtraction using complement
i) 2977-7992
ii) 11011-11001
80. Define duty cycle of a pulse waveform.
81. A basic 2-input logic circuit has a HIGH on one input and a LOW on the other input,
and the output is HIGH. What type of logic circuit is it?
82. What weight does the digit 7 in the number 58.72?
83. What is the largest decimal number that can be represented in binary with eight bits?
84. Convert the decimal number 45.5 to binary by using the sum-of-weight method.
85. Express the decimal number -39 as an 8-bit in the sign-magnitude,1s complement,
and 2s complement forms.
86.Convert the decimal number 3.248104 to a single-precision floating-point binary
number.
87. Divide 01100100 by 00011001.
88.Convert the hexadecimal number B2F816 to decimal.
89.Convert the octal number 23788 to decimal.
90. Implement EXOR operation using minimum no. of 2 i/p NAND gate only.
91. Implement EX-NOR operation using minimum no. of 2 i/p NAND gate only.
92. Implement EXOR operation using minimum no. of 2 i/p NOR gate only.
93. Implement EX-NOR operation using minimum no. of 2 i/p NOR gate only.
94. Draw the truth table of a Full Adder circuit.
95. Draw the truth table of a Full Subtractor circuit.
96. Determine the values of A, B,C and D that make the sum term A B C D equal to
0.
97. State DeMorgans theorems.
98. Convert the Boolean expression ABC AB ABCD into standard SOP form.
99.Convert the Boolean expression ( A B C )( B C D )( A B C D ) into
standard POS form.
100.List three types of latches and explain the operation of the latches.

LONG QUESTIONS
1. (i) Find the closed loop voltage gain for an OP-AMP that can be used when the
input signal varies by 0.5v in 10 ms , having a Slew rate of SR= 2V/s ?
(ii) Derive an expression for the voltage gain of a closed loop non-inverting amplifier
(consider that it is an ideal OP-AMP).
2. An amplifier operating from 3 V supplies provides a 2.2 V peak sine wave
across a 100- load when provided with a 0.2- V peak input from which 1.0 mA
peak is drawn. The average current in each supply is measured to be 20 mA.Find
voltage gain, current gain and power gain expressed as in dB. Find the supply power
and amplifier efficiency.
3. Draw the frequency spectrum of the periodic square wave having period T,
given below
V (t) = -V, -T/2<t<0
= V, 0<t<T/2
4. (i) Determine the out voltage of an op-amp for input voltages of V i1=150, Vi2
=140V.The amplifier has a differential gain of Ad =4000 and the CMRR is 100.
(ii) What you mean by Virtual ground in an ideal OPAMP.
5. (i) A diode has reverse saturation current of 5A at 250C for a reverse voltage of
20V.Calculate the reverse resistance.
(ii) Explain how diodes are useful for clamping operation .Draw a negative clamper.
6.(i) Find the percentage increase in reverse saturation current of a diode, if the
temperature is increased from 25 to 50 degree centigrade.
(ii) Sketch Vout of the following circuit

7. (i) Sketch the output of a differentiator. if the input is a square wave of 10 MHz.
Assume the time constant of the circuit is 1msec.

(ii)Explain the output expression of an Integrator circuit using OPAMP.

(iii) What is virtual ground?

8.(i) Write the analytical equation for the current which describes both the forward and
reverse characteristics of a diode. A silicon diode has a forward voltage drop of 1.2V for
dc current of 100mA.it has a reverse current of 1 A for a reverse voltage of
10V.Calculate the bulk and reverse resistance of the diode. Find the ac resistance at
forward dc current of 25mA.
(ii) Draw the circuit of a double ended clipper using ideal p-n diodes which limits the
outputs from +3V to -3V for sinusoidal input of amplitude 5V.
9.(i) Sketch the transfer and drain characteristics of an n-channel depletion type
MOSFET with Idss =12mA and Vp = -8V for a range of Vgs= -Vp to Vgs=1V.
(ii)Given Id =14mA and Vgs=1V.Determine Vp if Idss=9.5mA for a depletion type
MOSFET.
10.(i)What is the significant difference between the construction of an enhancement-type
MOSFET and a depletion-type MOSFET.
(ii)Given Id= 4mA at Vgs= -2V, determine Idss if Vp = -5V
11.(i)Draw the basic construction of a p-channel JFET.
(ii)Apply the proper biasing between drain and source and sketch the depletion region for
Vgs=0V.
12. Given Idss=6mA and Vp= -4.5V
(i) Determine Id at Vgs = -2 and -3.6V
(ii) Determine Vgs at Id=3 and 5.5mA
13.Sketch the transfer characteristics for an n-channel depletion type MOSFET with
Idss =10mA and Vp=-4V.
14.(i) Explain Self Bias Circuit using BJT.
(ii)Define stability factor and derive its general expression.
15.(a) Given that ICQ =2mA and VCEQ=10V. Determine R1 & RC for the following
network

16. Design Y A B C using minimum no. 2 i/p NOR gates.

17. Draw the circuit diagram of a full-wave rectifier. Derive the expression for Vavg , Vrms
and efficiency of a full-wave rectifier. Write the advantage of bridge rectifier over centretaped rectifier.
18. A crystal diode having an internal resistance Rf = 20 is used for half - Wave
rectification. If the applied voltage is V=50sin10t and the load resistance is
RL=800,Determine the following
(i)Im, Idc and Irms
(ii) AC power input and DC power output
(iii)DC output voltage
(iv)Ripple factor
19. Determine the output voltage Vout of the following circuit

20. Derive the frequency of oscillation in Wein Bridge oscillator. How the phase shift is
realized?
21. Explain in details the block diagram of Cathode Ray Oscilloscope (CRO).
22. Obtain the truth table for the logic expression of a full adder circuit and realize it
using two half-adder and one OR gate.
23. Prove that AB BC CA AB BC C A
24. Determine VC & VB of the following network

25. Derive the output voltage expression of an instrumentation amplifier and also write its
two applications.

26. Explain the properties of any one of universal logic gates.

27. Obtain the truth table of logic expression of a full subtractor and hence draws the
logic circuit using two subtractor and one OR gate.
28. Realize 16:1 MUX using 4:1 MUX
29. Convert the Boolean expression F m(1, 2, 4, 7) into POS form and hence realize
with basic logic gate .
30. What is memory? Discuss different types of memory in details.
2
I D I DSS
31. Prove that the transconductance of JFET g m
Vp
32. Design Full adder circuit using minimum no. of 2 i/ps NAND gates only.
33. Design Full adder circuit using minimum no. of 2 i/ps NOR gates only.
34. Design Full Subtractor circuit using minimum no. of 2 i/ps NAND gates only.
35. Design Full Subtractor circuit using minimum no. of 2 i/ps NOR gates only.
36. Design Full adder circuit using two half adders and one OR gate only.
37.Derive the resonant frequency expression for RC-phase shift oscillator.
38. Derive the input impedance and output impedance expression of a
voltage series feedback amplifier.
39.Write short notes on the followings
(a) Function generator
(b) Instrumentation amplifier
(c) SR latch
(d) RAM & ROM
(e) Summing Amplifier
40. Write short notes on the followings
(a) Crystal Oscillator.
(b) D latch
(c) Zener Diode
(d) Peak Rectifier
(e)RC-phase shift oscillator.