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E
TO-92
SOT-23
EB C
Mark:2X
Ordering Information
Part Number
Marking
Package
Packing Method
2N4401BU
2N4401
TO-92 3L
Bulk
2N4401TF
2N4401
TO-92 3L
2N4401TFR
2N4401
TO-92 3L
2N4401TA
2N4401
TO-92 3L
Ammo
2N4401TAR
2N4401
TO-92 3L
Ammo
MMBT4401
2X
SOT-23 3L
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November 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
6.0
600
mA
-55 to +150
IC
TJ, TSTG
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25C unless otherwise noted.
Symbol
PD
Max.
Parameter
Total Device Dissipation
Unit
2N4401(3)
MMBT4401(4)
625
350
mW
2.8
mW/C
5.0
RJC
83.3
RJA
200
C/W
357
C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
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2
Symbol
Parameter
Conditions
Min.
Max.
Unit
V(BR)CEO
Collector-Emitter Breakdown
Voltage(5)
IC = 1.0 mA, IB = 0
40
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = 0.1 mA, IE = 0
60
V(BR)EBO
IE = 0.1 mA, IC = 0
6.0
IBL
ICEX
hFE
(5)
DC Current Gain
20
40
80
100
40
0.1
0.1
300
IC = 150 mA, IB = 15 mA
0.40
IC = 500 mA, IB = 50 mA
0.75
VCE(sat)
Collector-Emitter Saturation
Voltage(5)
VBE(sat)
fT
IC = 20 mA, VCE = 10 V,
f = 100 MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 140 kHz
6.5
pF
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0,
f = 140 kHz
30
pF
hie
Input Impedance
1.0
15.0
hre
0.1
8.0
x10-4
hfe
40
500
hoe
Output Admittance
1.0
30
mhos
VCC = 30 V, VEB = 2 V,
IC = 150 mA, IB1 = 15 mA
15
ns
20
ns
225
ns
30
ns
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC = 150 mA, IB = 15 mA
0.75
IC = 500 mA, IB = 50 mA
0.95
1.20
250
V
V
MHz
Note:
5. Pulse test: pulse width 300 s, duty cycle 2.0%.
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3
Electrical Characteristics
500
V CE = 5V
400
125 C
300
200
25 C
100
- 40 C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
= 10
- 40 C
0.8
25 C
125 C
0.6
0.4
1
I
10
100
- COLLECTOR CURRENT (mA)
= 10
0.3
25 C
0.1
- 40 C
10
100
I C - COLLECTOR CURRENT (mA)
500
500
1
VCE = 5V
0.8
- 40 C
25 C
0.6
125 C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
500
100
CB
20
= 40V
CAPACITANCE (pF)
125 C
0.2
0.4
10
1
0.1
16
12
C
te
8
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE ( C)
150
0.1
C ob
1
10
REVERSE BIAS VOLTAGE (V)
100
f = 1 MHz
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4
400
I B1 = I B2 =
320
400
Ic
TIME (nS)
TIME (nS)
V cc = 25 V
240
160
240
tr
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
SOT-223
TO-92
0.5
SOT-23
0.25
25
50
75
100
o
TEMPERATURE ( C)
125
150
V CE = 10 V
I C = 10 mA
h re
h ie
h fe
1.2
hoe
0.8
0.4
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
100
1000
V CE = 10 V
T A = 25oC
6
hoe
4
h re
2
h fe
0
h ie
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
1.6
2.4
100
I C - COLLECTOR CURRENT (mA)
tf
80
t on
ts
160
t off
80
0.75
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
1.3
I C = 10 mA
T A = 25oC
1.25
1.2
h fe
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
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5
Physical Dimensions
Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
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6
Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
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7
0.95
2.920.20
3
1.40
1.30+0.20
-0.15
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
2.400.30
GAGE PLANE
0.23
0.08
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
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8
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Advance Information
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Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I72
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