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COVER FE/]TURE:
NOW
INVITED PAPER
PHASED-ARRAY RADARS:
PAST, ASTOUNDING
BREAKTHROUGHS AND
FUTURE TRENDS
Phased-anmj radars Juwe seen ever increasingly wider use around the wodd over the last five decades. In
recent years, they have seen breakthroughs that led to capabilities not possible in the past. This is
exemplified by the devehrpment ofGaAs integrated niicroivave circuits called monolithic microwave
integrated circuits (MMIC) that make it pos.nble to build active electronically scanned arrays (AESA) that
have lighter weight, smaller volume, higher reliability and. lower cost. These developnwnts liave readied the
point where it is now possible to build a low-cosi 35 GHz phased airayfor a missile seeker costing
$30/element (total cost of array including all electronics divided by the number of elements). This is made
pos.sible because integration allows the whole T/R module to be put on a single chip. For some applications,
it wiU soon be possible to put multiple receivers or transmitters on a single chip. The advances provided by
Moore's Law have now made it feasible to do digital beam forming with all its nmnerous advantages. This
article describes these advances and also covers the potentialfor GaN and SiC chips that have the
capability of higher peak power by a factor often than G<iAs chips, arrays with instantanecms bandwidths
of up to 33:1, SiGe low-cost T/R modules and low-cost MEMS arrays. A real radar application for multipleinput multiple-output (MIMO) Ims been demonstrated by MITs Lincoln Laboratonj, which allows tlie
colierent comlnning of two radars to achieve a9dB increase in sensitivity. MIMO also makes possihle the
optimum removal of clutter in over the horizon (OTH) and airborne radars by permitting adaptive control
of the transmit antenna pattern in the receiver
ver the last five decades since the fonnation of tlie Microwave Journal, phiiscdanay radars have seen renuirkahle a(!vaiices ainl wide proliferation around tlie woild.
This is exemplified in Figures I, 2 and 3, which
give just a few examples oithe phased airays deployed over the last 50 years and under develop-
30
RAT31DL
APG-63<V)2 ON
F-15(18)'[>200]''
'Nunbo' Manufactured
"Planned
Who said .AFSAs ha\e to be expensive? On Defense Advanced Research Projects Agency (DARPA)
fimding, the feasibility' of a low-cost.
$iy Jv. 35 GHz array was
Fif^. 2 Example solul-stnle tltscrele (D) and
MMIC (M) activf arruijH.
MICROWAVT: JOtitNAL JANt ARY 200S
SHUTTLE
RADAR
TOTOGRAPH
MISSION
(SRTCI
SIR
l'
TABLE I
BREAKTHROUGHS
Ffiased iirniy.s i'\
(SBX) nidur
35 ( ; M / $19 K active pluiscd anny
L()w-C(wl MKMS ])lia.sd
GaN.SiC
SiGt', CMOS
Digila! bcaiiil'oriiiing
k
and iisscinlily
M!M<)
idt'liuml arravs
p
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>
' Xnii (iniiii (iirhUcrtiiri-.
Receivers
Transceivers/
Transmitters
Switcii Matrices
Block Converters
Radar Subsystems
Coherent Converters i i
Communication Systems ;
Integrated Amplifiiar Ass
10'
Kiymofu
to*
VACUUM
WOTRONJ
Twn
Ito*
\
ElECTRON
lAua
dub
MBKT ;
SOUDIMTE
IMMTT
10
100
FREQUENCY (GHiJ
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egra
TECHNOLOGIES, INC.
TABLE II
GaN TECHNOLOGY ADVANTAGES
GaN lias the highest [xnu'r dciisih nlaiiv
existing tec'hin)!og\'
enahlcs retiiEL-cil chip size - IDWI.T cost
tor a given power
sni;il!er FET size enables broader
bantlwjdth because of higher impeditnce
GaN capable nf higber operating voltage
jn
power system
GaN on SiC ha.s
i
condiicti\'ity eonipared
inaiiitain moderate efiiiiiriel ternps ;U high
TABLE III
ADVANTAGES OF MMIC GaN
OVER GaAi MMIC
Provides .sy.steiii adMinlages re: weiglil,
coLiliiig. priiTie [lower, enst. sensitiviU', range
2H V vs. 10 Vat ix current (I) provides
5- Wx power witli - same gain
iuid elik'ieniy as C.nAs
Iligl) voltage Ga/\s Pl'lEMT al 10 t(} 20 V
lit lower [ pro\ides only ] .5 to 2x power.
CiiiN iu<m' c-ompact for same power.
GaN has liigJKT niatdiing Z * wider BW,
Helialiility tesLs at eie\ated temperatures
'indicate lO^hrlUe
Ra\tlifOii goal: 1.25 inni trairsistoi;
4{)V.6,4W/mrii,(:= 12 dB.
PAK = m% at 10 GHz
TABLE IV
GaN VI. GaAs COMPARISON
Parameter
Output prmer
r, c . i I
'^ at-;
densit)'
W/nini)\ fl.5 to l.a
^."^
www.integratech.com ' ^ ^
38
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Operating
voltage (VI
5 to 20
28 to 48
Breakdown
voltage iV)
20 to 40
> Hit)
- 0.5
- 1
47
390(Z)/490 (SiC)
Mavimiim
cnrrent (.Vniin)
Tlieniial
(WViii-K)
8 LNAt
8 PHASE SHIFTERS
GArN CONTROL/CH
8:1 COMBINER
6-18 GHt
N F - 6 dB*
0.7W
2.3 2.4 mm
SiGeBiCMOS"
SLC
OUTPUT
RECEIVER
ANTENNA
MF'
u
Adjurti Ai B Hi of tram.
array at rec.
to maximize tic
/ Superior performance
/ Superior (ielivery
/ Superiof support
CoMnmLMief4.9Blli
/ Superior reliabititij
M UADiit iH UltcROWMvi Mm
WWfci iMuiuivetinccom
imvAwir
about 4() percent.^ DBF will also permit better adapti\'e-:irray pr(x.t?ssing.
ADAPTIVE-ARRAY PROCESSING
42
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other physical point of \iew. Just as previously we viewed the SLX" as an arrav'
that puts nulls in die direction of the
januners. we can now go the other way
and \ie\v the (ully adaptive array
processor iw a SLC.^'"
Fidiy adaptive arrays have been
too (lifficiilt to implement for large
arrays up to uow. the luirdv\'iu-e and
tile processing load being too great,
To reduce the complexity, eonsideration lias been given to doing fully
adaptive arniv proce.ssing at the subarray level. This reduces the number
oi elements from thousantis to a few
tens. This is what is done on the
UK's Multi-fuiictiou p]lectronit;LlIy
Scainied Adaptive Hatlar (MESAIi)."
Witli ttie advaueti-s of DBF, it is now
possible to think ol aehieving the performance ot fully adaptive proci'ssiug
without its couiplexity. In fact, tlie
equiviJent jammer suppressi(jn of a fully adaptive array without its computation and transient penalties can he
achieved. This can be accomplished
with adaptive-adaptive array pnK*essirig.' This involves no more than Itx-ating digitally where the jamnu'rs are.
then ]K)intiug lieains at tliesc jainiucrs
(these beams are effectively eigenl)eams)^-'"-"* luid using these lu-iims as
side lobe cancellers for the uiaiu beam
(see Figure 9). For a U)(K)-cleuit'iit arra\' having to cope with 10 jammers, we
now have to invert a 10 x 10 matrix instead of a KXX) X KXK) niatiix and the
transient time is reduced iiy a factor ot
100. lu a elas.siciJ full)' adaptive arra),
one does not make use of" tlie loctition
of the jammers. But we can eiLsily determine their hjcation rather than to
put on biiudei's. Tliis method i.s e(julvaleut to the method of Principal C^otnjx)nents.^ The jammers c;ui easily be located by doing a Fast Fourier Transform aeross [he array This vvil[ not
locate jammers less tliaii a Ix^anivvidth
apart, but fbr uiany applications it may
be g(K)d enough. If lietter jamuier VAUci'llation is needed, then two stjuinted
beiuns about .'3/4 of a beamvvitlth apart
can be used fbr each located jammer.
Tliis is betmise for closely spaci'd jammers, less tlian a beamvvidth apart, lite
eigen}>eams are sum and difference
beams."' Alternately the Music algoritlim can be used.''^ Adaptive-adaptive
anay pnx-essing is in the .same spirit iH.s
the knowledge aided techniques
DAHPA has been recently funding
known as Knowledge Aided Sensor
Signal Processor & Expert System
(K.\SSPFR).^^ which they have applied
to Space-time Adaptive Proces.siug
(STAP) discussed in the next section.
STAP
MIMO
Lincoln Laboratory at MIT has
56
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SOLID-STATE "BOTTLE"
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6 Proiuifialii'ii.
July 2 0 0 ] ,
pj
7. E. Brookner antl J. Howcll. AdaptiveAdaptive .Arrays Processing. lEF-E Pror.
April 19S6.i>p. 602-04.
8. \ t . Rnssfll. (') al.. IEEE Traus. of MIT
12/97. pp. 2-H4-2453.
9. J.R. GupRi. Sjuin'-Timc Aiiapfive Pwccssiriiifiir Hmhir. Artcc-li I louse Inc.. 2003,
U). W'.F. (".abripl. "Adaptivf Arrays: An Introdnclioti." Pivr- lEEt.. Vol. 64', No. 2, Febmary 1976. pp. 2,'5^J-272.
I I S , t:<)Mtts, K. Ciinmo. j . McHarg. F. Unhpy
and D. Wciklc. "Rfitcnt Distributed Co'licrcut Apcrtiin- Mriisiirt-nifnls ior Next
Grneration BMO Hadai.' 2007 \KKK
Riitlar (^nniVrc-nfi-, April 17-20. 2007,
Biistiin. MA.
12. B. LfVTish and E.J. Dutkowski. "Vncunin
Elcctronit-s: Slatns and Trends," 2007
IEEE Radar CAinfereiitp, April 17-20,
2(H)7. Boslou. MA,
1.3. H, (in. AiLgic-Tnitk-iiig ,'\diiptt\<' ,\rray;
Ada|rtivf-Adiiptivr,"2(Kt7 IEEE RudnrCin'i[(Tencft. April 17-20, 2007, Bosttiii. MA,
14. R,J. Barker. ].H, B(H.skf. N.C. Lnluiiann.
Jr. and G.S. Nusijiovich. Modcni Micwwavf fiiui MiUintetcr-ivdvtf Power Ehxtroiiio!, Wiley-tnterscience and IEEE
Press, 2005,
MICROWAVE JOURNAL JANUARY 20()S
Max DC
Voltaoe
Max DC
Current
20 KHz
200 V
10 mA
750 KHz
1.5 KV
20 mA
80 kHz
50 V
100 mA
50 GHz
10 kH^
16 V
1 00 iTiA
Model
Bandwidtli
5530A
12.5 GHz
5531
10 GHz
5541A
>26 GHz
5542
5542K
40 GHz
12 KHz
16V
100 mA
5542LL
>40 GHz
12 kHz
16 V
100 mA
5545
20 GHz
65 kHz
50 V
500 mA
5546
7 GHz
3.5 KHz
50 V
500 mA
5547
15 GHz
5 kHz
50 V
500 mA
55508
18 GHz
100 kHz'
50 V
500 mA'
5575A
I2GHi'
lOkHz"
50 V
500 mA-
5580
15 GH.'
mkHz
50 V
2 Amp
5585
18 GHz
2 GHz
100 V
6 Amps
5586
5 GHz
1 GHz
100 V
8 Amps
5587
2 GHz
200 MHz
100 V
6 Amps
5569
2.6 GHz
300 MHz
100 V
7 Amps
SMI 00
13GHI
14 kHz
16V
500 mA
SMI 01
15 GHz
7 kHz-
16V
500 mA
Bandwidths to 50GHz
Low f cutoff down to 3.5kH2
DC voltages to 1.5kV
DC currents to 7A
Coaxial and SMT packages
A Picosecond
Pulml-abm
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V-2236
3(). E. Braolcner, "Phased Aniiy.s : Major .Ativarices and Kiiliire Tren<!.s Into (lie Next
Milleiiiilnni," I'nicecithi^s of the 2S'''
Moxcow hitenitilinuiit ConfiTencf nn .AJJt<!niui Thconj and Tccfniolo'^ij. Moscow,
Russia. Soptemhev l!J98. pp. 24-12.
31. E. Bnx>kiitT. "I'luLsixl-anity Hiulars, " ^tmtifu-.\iiu-riam. Kclniiary l9.S.5.pp.94-l()2.
32. Iv Hroukiirr (['-(I.), i'mrtiral Phmrd-orraij
Antcwui .S|/.s7f'w, Artctli House IIR'., 1!)91.
3^3. K. BrodkiTcr. Aupvctn of Modem lindar.
Ch. 2. Aitt-ch 1 InusL- Inc.. 19SS.
-3-1. E. Urookner, Radar Technology. Artedi
Ilimsc Inc.. 1977,
'Vi. F,. linxikncr, "Hiuliir Iniiitiirig inr Aims
OmtifiL" Cli. 11 \\\ Anns Coiilrol \'i-rif\ai'
HoHH. The Tt'clmoli'ffi's That Make it Po.s.\iblc. K. Tsipis. D.W Haffriiri-ilcr anil R
Jaiicway (Kds.), Pergamoii-Brawoy's, i/)n(ioii.uk. 19Sfi.
:J(1 K. BnMikinT. "l.ai^e Pliast'd-arniy Uaelars,"
Cli, 7 in Nuclear Anni Ti'rhtiotof!;ics in the
WfiOs. D. Schroef r mid D. Hafenieistt-r
(Eds.l, ."Vmericiui institute of Phv'sics, New
York, NY. 1988'Yi. Farina, ct al., "MiiUicliatmfl Hadar: Advaiiocd IrivplcnK'ntatioii Tct'lmuldgy und
Ex[)cnint'nta! HfSidts," Prnr. 20(15 IRS.
Brrlin. Scptetiiber 6-8. 2(H).5. pp. .317^330.
3S. (.:TH1. Hoiiziw Magazine. 2()6.
39. Machine Design. Maaii 22. 2007.
40. R..^, Moiiziiigo and T.W. Miller. Inlnxluction to Adaptive .-\rrr/(/.v. Jolin Wiley &
Sons Inc.. I9SII.
41. M.f:. WVlls. "MK.SAH Arlapliv.- Nnlllng,"
ff
lO IFlW l t r
II.i.sM
Ean
/.i
f H
ofthr IEEE.
PliascJ-umn Anii'Nna.Sy.sliMi
p
i
il Hwiar'Tti'liniilHp-(iiJTi,). Itr 0vft
in railnr. phmccf iirraxji liuil h-arkiniiimmiul tlif
r.il OUT lO.IMIO l.m-r/itU-utM tlii'^r
riHinin Hr irns banquet xpedkrr and krijnotc x)iraker:i>\
Iliiaw III- /tn.! iivrr 11(1 ;JHIN.7\. (rt/A'.v aiul ronv.iiioiulrni-rJi
lokl-1 cm/W. Ill lul/IUlim. Inr hi.\ nm-r H(l iniiUd wlkn llnil