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General Description
Product Summary
SOIC-8
Top View
D
D
Bottom View
D
D
G
G
S
S
S
VGS
TA=25C
Continuous Drain
Current AF
TA=70C
TA=25C
Power Dissipation
Maximum Junction-to-Lead C
25
ID
-10.5
IDM
-60
W
2.1
TJ, TSTG
-55 to 150
Symbol
t 10s
Steady-State
Steady-State
PD
TA=70C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Units
V
-12.5
Maximum
-30
RJA
RJL
Typ
28
54
21
Max
40
75
30
Units
C/W
C/W
C/W
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AO4427
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250A, VGS=0V
-30
IGSS
VDS=0V, VGS=25V
VGS(th)
VDS=VGS ID=-250A
-1.7
ID(ON)
VGS=-10V, VDS=-5V
-60
TJ=55C
-5
VGS=-20V, ID=-12.5A
TJ=125C
IS=-1A,VGS=0V
IS
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
12
14
2330
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V,
ID=-12.5A
3.4
m
m
m
S
-1
-4.2
2900
pF
480
pF
320
448
pF
6.8
10
41
52
Qgs
Qgd
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-Off DelayTime
tf
trr
IF=-12.5A, dI/dt=100A/s
28
Qrr
20
15
24
VDS=-5V, ID=-12.5A
-3
9.4
32
10
12.2
11.5
Forward Transconductance
VGS=-10V, ID=-10A
VSD
Coss
-2.5
VGS=-4.5V, ID=-5A
gFS
Units
-1
Max
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
nC
10
nC
12
nC
12.8
ns
10.3
ns
49.5
ns
29
ns
35
ns
nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4427
30
-6V
-10V
VDS=-5V
-5V
20
20
15
-ID(A)
-ID (A)
-4.5V
125C
10
10
VGS=-4V
0
0
2
3
4
-VDS (Volts)
Figure 1: On-Region Characteristics
12
1.5
2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 2: Transfer Characteristics
Normalized On-Resistance
1.6
11
RDS(ON) (m )
25C
VGS=-10V
ID=-10A
1.4
VGS=-10V
VGS=-10V, VDS=-15V,
10
ID=-12.5A
1.2
VGS=-20V
VGS=-20V
ID=-12.5A
1
0.8
0
10
15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
ID=-12.5A
1.0E+00
40
-IS (A)
RDS(ON) (m )
1.0E-01
125C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-02
COMPONENTS IN LIFE SUPPORT DEVICES
125COR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF
1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN,
20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-04
25C
10
25C
1.0E-05
1.0E-06
4
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4427
10
VDS=-15V
ID=-12.5A
Capacitance (pF)
-VGS (Volts)
Ciss
2500
2000
1500
Coss
1000
Crss
500
0
0
10
15
20
25
30
35
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
45
100.0
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
RDS(ON)
limited
100s
TJ(Max)=150C
TA=25C
10s
30
-ID (Amps)
V
10ms
GS=-10V, VDS=-15V,
0.1s
1.0
1s
DC
0
0.001
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Z JA Normalized Transient
Thermal Resistance
20
10
0.1
10
ID=-12.5A
10s
TJ(Max)=150C
TA=25C
0.1
Power (W)
1ms
10.0
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
PD
FUNCTIONS
AND RELIABILITY WITHOUT NOTICE.
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.01
100
1000
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