Professional Documents
Culture Documents
BIPOLAR JUNCTION
TRANSISTORS
Code:
EEE2213
Semester II
2010/2011
BJT STRUCTURE
Basic structure of the bipolar junction transistor (BJT) determines its
operating characteristics.
Constructed with 3 doped semiconductor regions called emitter, base,
and collector, which separated by two pn junctions.
2 types of BJT;
(1) npn: Two n regions separated by a p region
(2) pnp: Two p regions separated by an n region.
BIPOLAR:
refers to the use
of both holes &
electrons as
current carriers
in the transistor
structure.
Base-emitter junction: the pn junction joining the base region & the
emitter region.
Base-collector junction: the pn junction joining the base region & the
collector region.
A wire lead connects to each of the 3 regions. These leads labeled as;
E: emitter
B: base
C: collector
The heavily doped n-type emitter region has a very high density of
conduction-band (free) electrons.
These free electrons easily diffuse through the forward-based BE
junction into the lightly doped & very thin p-type base region
(indicated by wide arrow).
The base has a low density of holes, which are the majority carriers
(represented by the white circles).
A small percentage of the total number of free electrons injected into
the base region recombine with holes & move as valence electrons
through the base region & into the emitter region as hole current
(indicated by red arrows).
Transistor Currents
The directions of the currents in both npn and pnp transistors and their
schematic symbol are shown in Figure (a) and (b). Arrow on the emitter
of the transistor symbols points in the direction of conventional
current. These diagrams show that the emitter current (IE) is the sum of
the collector current (IC) and the base current (IB), expressed as follows:
IE = I C + I B
DC = IC/IB
DC
I C 3.65mA
73
IB
50 A
IE = IC + IB = 3.65 mA + 50 A = 3.70 mA
DC
I C 3.65 mA
0.986
I E 3.70 mA
What we ultimately
determine by use of
Kirchhoffs voltage law
for series circuits is that,
in the base circuit, VBB is
distributed across the
base-emitter junction
and RB in the base
circuit. In the collector
circuit we determine that
VCC is distributed
proportionally across
RC and the
transistor(VCE).
VBE 0.7 V
VRB = IBRB : by Ohms law
IBRB = VBB VBE : substituting for VRB
IB = (VBB VBE) / RB : solving for IB
VCE = VCC VRc : voltage at the collector with respect to the
grounded emitter
VRc = ICRC
VCE = VCC ICRC : voltage at the
collector with
respect to the emitter
where IC = DCIB
Ex 4-2 Determine I , I , I , V
B
BE,
Ex 4-2 Determine I , I , I , V
B
BE,
IB = (VBB VBE) / RB
= (5 V 0.7 V) / 10 k = 430 A
VCE = VCC ICRC
= 10 V (64.5 mA)(100 )
= 3.55 V
VCB = VCE VBE
= 3.55 V 0.7 V
= 2.85 V
Since the collector is at a higher
voltage than the base, the collectorbase junction is reverse-biased.
IC = DCIB
= (150)(430 A)
= 64.5 mA
IE = IC + IB
= 64.5 mA + 430 A
= 64.9 mA
Sketch an ideal family of collector curves for the circuit in Figure for IB = 5 A to 25 A in 5
A increment. Assume DC = 100 and that VCE does not exceed breakdown.
Sketch an ideal family of collector curves for the circuit in Figure for IB = 5 A to 25 A in 5
A increment. Assume DC = 100 and that VCE does not exceed breakdown.
IC = DC IB
IB
5 A
10 A
15 A
20 A
25 A
IC
0.5 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
Cutoff
With no IB , the transistor is in the cutoff region and just as the
name implies there is practically no current flow in the
collector part of the circuit. With the transistor in a cutoff state,
the full VCC can be measured across the collector and
emitter(VCE).
Saturation
Once VCE reaches its maximum value, the transistor is said to be in
saturation.
DC Load Line
The dc load line graphically illustrates IC(sat) and cutoff for a transistor.
Active
region of
the
transistors
operation.
I C ( sat)
10 V 0.2 V
9.8 mA
1.0 k
Now, see if IB is large enough to produce IC(sat).
IC
PD (max)
VCE
IC
PD (max)
VCE
250 mW
41.7 mA
6V
D(max)
= 800
mW, VCE(max) = 15 V, and IC(max) = 100 mA. Determine the maximum value to which VCC
can be adjusted without exceeding a rating. Which rating would be exceeded first?
D(max)
= 800
mW, VCE(max) = 15 V, and IC(max) = 100 mA. Determine the maximum value to which VCC
can be adjusted without exceeding a rating. Which rating would be exceeded first?
195 A
RB
22 k
I C DC I B (100 )(195 A) 19.5mA
Derating PD(max)
P D(max) is usually specified at 25C.
At higher temperatures, P D(max) is less.
Datasheets often give derating factors for determining P D(max) at
any temperature above 25C.
Ex 4-7
A certain transistor has a P D(max) of 1 mW at 25C. The derating
factor is 5 mW/ C. What is the P D(max) at a temperature of
70C?
Transistor Datasheet
Refer Figure 4-20 (a partial datasheet for the 2N3904 npn
transistor).
The maximum collector-emitter voltage (VCEO) is 40V.
A 2N3904 transistor is used in the circuit. Determine the maximum value to which VCC
can be adjusted without exceeding a rating. Which rating would be exceeded first?
A 2N3904 transistor is used in the circuit. Determine the maximum value to which VCC
can be adjusted without exceeding a rating. Which rating would be exceeded first?
PD(max) = 800 mW
VCE(max) = 15 V
IC(max) = 100 mA.
I B =195m A
I C = b DC I B =19.5mA
VCC(max) = VCE(max) + VRc = 40 V + 19.5 V = 59.5 V
However at the max value of VCE, the power dissipation is
PD = VCE(max)IC = (40V)(19.5mA) = 780 mW
Power Dissipation exceeds the maximum of 645 mW specified on the
datasheet.
I C ( sat )
RC
I B (min)
I C ( sat )
DC
Ex 4-10 (a) For the transistor circuit in Figure, what is VCE when VIN = 0 V?
(b) What minimum value of IB is required to saturate this transistor if DC is
200? Neglect VCE(sat).
(c) Calculate the maximum value of RB when VIN = 5 V.
Ex 4-10 (a) For the transistor circuit in Figure, what is VCE when VIN = 0 V?
(b) What minimum value of IB is required to saturate this transistor if DC is
200? Neglect VCE(sat).
(c) Calculate the maximum value of RB when VIN = 5 V.
VCC
10 V
10 mA
RC 1.0 k
I B (min)
I C ( sat)
DC
10 mA
50 A
200
RB (max)
VRB
I B (min)
4.3V
86 k
50 A
Transistor Construction
There are two types of transistors:
pnp
npn
pnp
42
Transistor Operation
With the external sources, VEE and VCC, connected as shown:
The emitter-base junction is forward biased
The base-collector junction is reverse biased
43
Currents in a Transistor
Emitter current is the sum of the collector and
base currents:
IE IC IB
44
Common-Base Configuration
45
Common-Base Amplifier
Input Characteristics
This curve shows the relationship
between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.
46
Common-Base Amplifier
Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).
47
Operating Regions
48
Approximations
Emitter and collector currents:
I
Base-emitter voltage:
VBE 0.7 V (for Silicon)
49
Alpha ()
Alpha () is the ratio of IC to IE :
dc
IC
IE
Ideally: = 1
In reality: is between 0.9 and 0.998
I C
I E
50
Transistor Amplification
Voltage Gain:
V
200mV
I E Ii i
10mA
Ri
20
I
I
V
I 10 mA
i
I R (10 ma )( 5 k) 50 V
L
51
Av
VL
Vi
50V
200mV
250
CommonEmitter Configuration
52
Common-Emitter Characteristics
Collector Characteristics
Base Characteristics
53
IE = IC + IB
Actual Currents
IC = IE + ICBO
I CEO
I CBO
1
54
I B 0 A
Beta ()
represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)
In DC mode:
dc
IC
IB
In AC mode:
ac
IC
IB
55
VCE constant
Beta ()
Determining from a Graph
AC
100
2.7 mA
VCE 7.5
25 A
108
DC
56
Beta ()
Relationship between amplification factors and
I C I B
I E ( 1)I B
57
CommonCollector Configuration
58
CommonCollector Configuration
59
60
Power Dissipation
Common-base:
PCmax VCB I C
Common-emitter:
PCmax VCE I C
Common-collector:
PCmax VCE I E
61
62
63
Transistor Testing
Curve Tracer
Provides a graph of the characteristic curves.
DMM
Some DMMs measure DC or hFE.
Ohmmeter
64
65