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Description:
Applications:
Typical Application
4.7 F
4 V
DD
470
STAT
+ Single
Li-Ion
- Cell
VSS 2
Package Types
VDD 1
VBAT 3
4.7 F
PROG
MCP73831/2
23 DFN*
VIN
VDD 2
VBAT 3
VBAT 4
2 k
8 PROG
EP
9
MCP73831/2
SOT-23-5
STAT 1
7 NC
VSS 2
6 VSS
VBAT 3
5 PROG
4 VDD
5 STAT
MCP73831
DS20001984G-page 1
MCP73831/2
Functional Block Diagram
VDD
6 A
DIRECTION
CONTROL
VBAT
G=0.001
6 A
PROG
0.5 A
+
-
REFERENCE
GENERATOR
CA
MCP73831
ONLY
43.6 k
VREF(1.22V)
361 k
89 k
VDD
3.9 k
+
-
PRECONDITION
182.3 k
111 k
7 k
190 k
+
TERMINATION
+
CHARGE
15 k
STAT
+
-
VA
111 k
+
-
0.5 A
VBAT
477 k
VSS
255 k
DS20001984G-page 2
100 k
SHDN
+
-
DIRECTION
CONTROL
+
-
UVLO
MCP73831/2
1.0
ELECTRICAL
CHARACTERISTICS
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40C to +85C.
Typical values are at +25C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Supply Voltage
VDD
3.75
Supply Current
ISS
510
1500
Charging
53
200
Charge Complete,
No Battery
25
50
PROG Floating
0.1
Supply Input
VSTART
3.3
3.45
3.6
VDD Low-to-High
VSTOP
3.2
3.38
3.5
VDD High-to-Low
UVLO Hysteresis
VHYS
70
mV
4.168
4.20
4.232
MCP7383X-2
4.317
4.35
4.383
MCP7383X-3
4.367
4.40
4.433
MCP7383X-4
4.466
4.50
4.534
MCP7383X-5
VREG
VDD = [VREG(typical)+1V]
IOUT = 10 mA
TA = -5C to +55C
Line Regulation
VBAT/
VBAT)/VDD|
0.09
0.30
%/V
Load Regulation
VBAT/VBAT|
0.05
0.30
IOUT = 10 mA to 50 mA
VDD = [VREG(typical)+1V]
PSRR
52
dB
47
dB
22
dB
VDD = [VREG(typical)+1V] to
6V, IOUT = 10 mA
IREG
90
100
110
mA
PROG = 10 k
450
505
550
mA
12.5
14.5
16.5
mA
PROG = 67 k
TA = -5C to +55C
Note 1:
DS20001984G-page 3
MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40C to +85C.
Typical values are at +25C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
IPREG / IREG
7.5
10
12.5
15
20
25
30
40
50
100
No Preconditioning
TA = -5C to +55C
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
VPTH / VREG
64
66.5
69
VBAT Low-to-High
69
71.5
74
VBAT Low-to-High
VPHYS
110
mV
VBAT High-to-Low
ITERM / IREG
3.75
6.25
5.6
7.5
9.4
8.5
10
11.5
15
20
25
Charge Termination
Charge Termination
Current Ratio
TA = -5C to +55C
Automatic Recharge
91.5
94.0
96.5
VBAT High-to-Low
94
96.5
99
VBAT High-to-Low
RDSON
350
IBAT_DET
No-Battery-Present
Threshold
VNO_BAT
VREG +
100 mV
No-Battery-Present
Impedance
ZNO_BAT
IDISCHARGE
0.15
PROG Floating
0.25
VDD Floating
0.15
-5.5
-15
Charge Complete
Recharge Voltage
Threshold Ratio
VRTH / VREG
ISINK
25
mA
VOL
0.4
ISOURCE
35
mA
VOH
VDD-0.4
VDD - 1
ISOURCE = 4 mA (MCP73831)
ILK
0.03
High-Impedance
Charge Impedance
Range
RPROG
67
Minimum Shutdown
Impedance
RPROG
70
200
VPDENTER
VDD<(VBAT
+20 mV)
VDD<(VBAT
+50 mV)
Source Current
High Output Voltage
Input Leakage Current
ISINK = 4 mA
PROG Input
DS20001984G-page 4
MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40C to +85C.
Typical values are at +25C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
VPDEXIT
VDD<(VBAT
+150 mV)
VDD<(VBAT
+200 mV)
Die Temperature
TSD
150
Die Temperature
Hysteresis
TSDHYS
10
Units
Conditions
3.5V VBAT VREG
VDD Rising
Thermal Shutdown
Note 1:
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V,
TA = -40C to +85C. Typical values are at +25C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
tSTART
ms
VDD Low-to-High
tDELAY
ms
tRISE
ms
Termination Comparator
Filter
tTERM
0.4
1.3
3.2
ms
tCHARGE
0.4
1.3
3.2
ms
Average VBAT
tOFF
200
ISINK = 1 mA to 0 mA
tON
200
ISINK = 0 mA to 1 mA
Conditions
Constant-Current Regulation
Transition Time Out of
Preconditioning
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V.
Typical values are at +25C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
TA
-40
+85
TJ
-40
+125
TA
-65
+150
5-Lead, SOT-23
JA
230
C/W
JA
76
C/W
Temperature Ranges
Specified Temperature Range
Note 1:
2:
This represents the minimum copper condition on the PCB (Printed Circuit Board).
With large copper area on the PCB, the SOT-23-5 thermal resistance (JA) can reach a typical value of
130C/W or better.
DS20001984G-page 5
MCP73831/2
NOTES:
DS20001984G-page 6
MCP73831/2
2.0
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
4.210
MCP73831-2
4.205
IOUT = 10 mA
4.200
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25C, Constant-Voltage mode.
4.195
IOUT = 100 mA
4.190
4.185
IOUT = 450 mA
4.180
4.175
4.170
4.50
4.75
5.00
5.25
5.50
5.75
6.00
500
450
400
350
300
250
200
150
100
50
0
2
4.210
104
Charge Current (mA)
4.200
IOUT = 10 mA
4.195
4.190
4.185
IOUT = 100 mA
4.180
4.175
FIGURE 2-4:
Charge Current (IOUT) vs.
Programming Resistor (RPROG).
MCP73831-2
4.205
IOUT = 450 mA
RPROG = 10 k
103
102
101
100
99
98
97
96
4.50
80
70
60
50
40
30
20
10
-10
-20
-30
4.170
-40
FIGURE 2-1:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
7 12 17 22 27 32 37 42 47 52 57 62 67
Programming Resistor (k)
4.75
+85C
0.30
0.20
0.15
5.50
516
0.40
0.25
5.25
-40C
+25C
0.10
0.05
0.00
3.00
3.20
3.40
3.60
3.80
4.00
4.20
FIGURE 2-3:
Output Leakage Current
(IDISCHARGE) vs. Battery Regulation Voltage
(VBAT).
5.75
6.00
FIGURE 2-5:
Charge Current (IOUT) vs.
Supply Voltage (VDD).
FIGURE 2-2:
Battery Regulation Voltage
(VBAT) vs. Ambient Temperature (TA).
0.35
5.00
RPROG = 2 k
514
512
510
508
506
504
502
500
4.50
4.75
5.00
5.25
5.50
5.75
6.00
FIGURE 2-6:
Charge Current (IOUT) vs.
Supply Voltage (VDD).
DS20001984G-page 7
MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25C, Constant-Voltage mode.
525
RPROG = 10 k
103
102
101
100
99
98
97
RPROG = 2 k
450
375
300
225
150
75
0
-10
Attenuation (dB)
512
510
508
506
504
80
70
60
50
40
30
20
10
-10
-20
-30
0.1
FIGURE 2-8:
Charge Current (IOUT) vs.
Ambient Temperature (TA).
0
-10
Attenuation (dB)
90
75
60
45
30
15
155
145
135
125
115
105
95
85
75
65
55
45
0
35
10
155
145
135
115
125
100
1000
FIGURE 2-11:
Power Supply Ripple
Rejection (PSRR).
RPROG = 10 k
25
Frequency (kHz)
95
-40
-60
0.01
FIGURE 2-9:
Charge Current (IOUT) vs.
Junction Temperature (TJ).
DS20001984G-page 8
105
-30
500
105
85
-20
-50
120
75
502
-40
FIGURE 2-10:
Charge Current (IOUT) vs.
Junction Temperature (TJ).
RPROG = 2 k
514
65
FIGURE 2-7:
Charge Current (IOUT) vs.
Ambient Temperature (TA).
516
55
25
80
70
60
50
40
30
20
10
-10
-20
-30
-40
45
96
35
104
-20
-30
-40
-50
-60
0.01
0.1
10
100
1000
Frequency (kHz)
FIGURE 2-12:
Power Supply Ripple
Rejection (PSRR).
MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)
1.40
0.10
0.05
1.20
0.05
10
0.00
1.00
0.00
-0.05
0.80
-0.05
-0.10
0.60
-0.10
-0.15
0.40
-0.15
-0.20
0.20
-0.20
200
180
160
0.00
-0.10
200
-0.12
180
160
140
120
100
80
20
60
Time (s)
FIGURE 2-15:
200
180
160
140
120
80
2.0
200
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 k
1.0
100
0.0
-0.08
300
0
240
0.05
3.0
210
-0.06
180
-0.04
0.10
400
150
0.15
500
4.0
120
-0.02
5.0
60
0.20
600
30
0.00
6.0
0.25
FIGURE 2-17:
Complete Charge Cycle
(180 mAh Li-Ion Battery).
0.02
Output Ripple (V)
0.04
0.30
40
90
120
100
80
60
40
20
140
Time (minutes)
0.35
-0.05
20
0
Time (s)
FIGURE 2-14:
40
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 k
1.0
0.0
-0.30
0
-2
2.0
-0.25
60
180
-0.20
IOUT = 100 mA
COUT = 4.7 F, X7R Ceramic
3.0
160
-0.15
140
-0.10
80
120
4.0
100
-0.05
80
100
60
0.00
120
5.0
40
10
6.0
20
0.05
FIGURE 2-16:
0.10
Output Ripple (V)
12
-0.30
Time (s)
14
100
40
Time (s)
FIGURE 2-13:
-0.25
-0.20
200
180
160
140
120
80
100
60
40
20
-0.30
0
-2
0.00
60
-0.25
20
IOUT = 10 mA
COUT = 4.7 F, X7R Ceramic
0.10
12
14
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25C, Constant-Voltage mode.
Time (minutes)
FIGURE 2-18:
Complete Charge Cycle
(1000 mAh Li-Ion Battery).
DS20001984G-page 9
MCP73831/2
NOTES:
DS20001984G-page 10
MCP73831/2
3.0
PIN DESCRIPTION
TABLE 3-1:
Pin No.
Symbol
Function
DFN
SOT-23-5
VDD
VDD
VBAT
VBAT
STAT
VSS
NC
No Connection
PROG
EP
3.1
3.2
3.3
3.4
3.5
3.6
DS20001984G-page 11
MCP73831/2
NOTES:
DS20001984G-page 12
MCP73831/2
4.0
DEVICE OVERVIEW
SHUTDOWN MODE
VDD < VUVLO
VDD < VBAT
or
PROG > 200 k
STAT = High Z
VBAT = VREG
CONSTANT VOLTAGE
MODE
Charge Voltage = VREG
STAT = LOW
IBAT < ITERM
CHARGE COMPLETE
MODE
No Charge Current
STAT = HIGH (MCP73831)
STAT = High Z (MCP73832)
FIGURE 4-1:
4.1
Flowchart.
4.2
Battery Detection
4.3
Charge Qualification
4.4
Preconditioning
DS20001984G-page 13
MCP73831/2
300
225
150
75
155
145
135
125
115
95
105
85
Charge Termination
The charge cycle is terminated when, during ConstantVoltage mode, the average charge current diminishes
below a percentage of the programmed charge current
(established with the value of the resistor connected to
the PROG pin). A 1 ms filter time on the termination
comparator ensures that transient load conditions do
not result in premature charge cycle termination. The
percentage or ratio of the current is factory set. Refer to
Section 1.0 Electrical Characteristics for charge
termination current options and the Product
Identification System for standard options.
375
75
4.7
RPROG = 2 k
450
65
525
55
Constant-Voltage Mode
25
4.6
Thermal Regulation
45
4.9
35
4.5
FIGURE 4-2:
4.10
Thermal Regulation.
Thermal Shutdown
The MCP73831/2 suspend charge if the die temperature exceeds 150C. Charging will resume when the
die temperature has cooled by approximately 10C.
4.8
Automatic Recharge
DS20001984G-page 14
MCP73831/2
5.0
DETAILED DESCRIPTION
5.2
5.1
Analog Circuitry
5.2.1
5.1.1
The VDD pin is the input supply pin for the MCP73831/
2 devices. The MCP73831/2 automatically enter a
Power-Down mode if the voltage on the VDD input falls
below the UVLO voltage (VSTOP). This feature prevents
draining the battery pack when the VDD supply is not
present.
5.1.2
kOhms
IREG
milliampere
5.1.3
Digital Circuitry
STATUS INDICATOR (STAT)
TABLE 5-1:
STATUS OUTPUT
STAT1
MCP73831 MCP73832
Shutdown
High Z
High Z
No Battery Present
High Z
High Z
Preconditioning
Constant-Current Fast
Charge
Constant Voltage
Charge Complete
Standby
High Z
5.2.2
DS20001984G-page 15
MCP73831/2
NOTES:
DS20001984G-page 16
MCP73831/2
6.0
APPLICATIONS
CIN
VDD
VBAT
STAT
REGULATED
WALL CUBE
PROG
3
COUT
5
LED
1
VSS
+ Single
Li-Ion
- Cell
RPROG
MCP73831
120
6.0
600
5.0
100
5.0
500
4.0
80
4.0
400
3.0
60
3.0
300
2.0
40
Time (minutes)
FIGURE 6-2:
Typical Charge Profile
(180 mAh Battery).
6.1
240
210
180
150
120
90
Time (minutes)
FIGURE 6-3:
Typical Charge Profile in
Thermal Regulation (1000 mAh Battery).
6.1.1
100
0.0
180
160
140
120
100
80
60
40
20
0
0
0.0
1.0
60
20
200
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 k
30
1.0
2.0
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 k
6.0
FIGURE 6-1:
6.1.1.1
COMPONENT SELECTION
DS20001984G-page 17
MCP73831/2
6.1.1.2
6.1.1.3
Thermal Considerations
Where:
VDDMAX
IREGMAX
VPTHMIN
6.1.1.4
External Capacitors
DS20001984G-page 18
6.1.1.5
Reverse-Blocking Protection
6.1.1.6
Charge Inhibit
6.1.1.7
6.2
VBAT
FIGURE 6-4:
RPROG
COUT MCP73831 C
IN
VDD
VSS
VBAT
FIGURE 6-5:
VDD
MCP73831/2
7.0
PACKAGING INFORMATION
7.1
Device
Code
MCP73831T-2ACI/MC
AAE
MCP73831T-2ATI/MC
AAF
MCP73831T-2DCI/MC
AAG
MCP73831T-3ACI/MC
AAH
MCP73831T-4ADI/MC
AAJ
MCP73831T-5ACI/MC
AAK
MCP73832T-2ACI/MC
AAL
MCP73832T-2ATI/MC
AAM
MCP73832T-2DCI/MC
AAP
MCP73832T-3ACI/MC
AAQ
MCP73832T-4ADI/MC
AAR
MCP73832T-5ACI/MC
AAS
Example
AAE
739
25
5-Lead SOT-23
XXNN
Device
Example
Code
MCP73831T-2ACI/OT
KDNN
MCP73831T-2ATI/OT
KENN
MCP73831T-2DCI/OT
KFNN
MCP73831T-3ACI/OT
KGNN
MCP73831T-4ADI/OT
KHNN
MCP73831T-5ACI/OT
KJNN
MCP73832T-2ACI/OT
KKNN
MCP73832T-2ATI/OT
KLNN
MCP73832T-2DCI/OT
KMNN
MCP73832T-3ACI/OT
KPNN
MCP73832T-4ADI/OT
KQNN
MCP73832T-5ACI/OT
KRNN
MCP73832T-2DFI/OT
LUNN
KD25
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week 01)
Alphanumeric traceability code
Pb-free Compliant JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.
DS20001984G-page 19
MCP73831/2
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DS20001984G-page 20
MCP73831/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001984G-page 21
MCP73831/2
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DS20001984G-page 22
MCP73831/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001984G-page 23
MCP73831/2
APPENDIX A:
REVISION HISTORY
5.
6.
3.
4.
5.
6.
7.
DS20001984G-page 24
MCP73831/2
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XX
Examples: *
/XX
a)
Device
VREG
b)
c)
Device:
MCP73831:
MCP73831T:
MCP73832
MCP73832T:
Regulation
Voltage:
Code
VREG
2
3
4
5
4.20V
4.35V
4.40V
4.50V
=
=
=
=
d)
a)
b)
c)
d)
a)
b)
Options: *
Code
AC
AD
AT
DC
IPREG/IREG
VPTH/VREG
ITERM/IREG
VRTH/VREG
10
10
10
100
66.5
66.5
71.5
x
7.5
7.5
20
7.5
96.5
94
94
96.5
c)
d)
a)
b)
Temperature
Range:
Package:
MC
OT
d)
a)
b)
c)
d)
a)
b)
c)
d)
DS20001984G-page 25
MCP73831/2
NOTES:
DS20001984G-page 26
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchips Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchips code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
2005-2014, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-63276-375-4
== ISO/TS 16949 ==
2005-2014 Microchip Technology Inc.
DS20001984G-page 27
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DS20001984G-page 28
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Tel: 61-2-9868-6733
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03/25/14