AO4407A

30V P-Channel MOSFET

General Description

Product Summary

The AO4407A uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.

VDS = -30V
ID = -12A
(VGS = -20V)
RDS(ON) < 11m (VGS = -20V)
RDS(ON) < 13m (VGS = -10V)
RDS(ON) < 17m (VGS = -6V)

* RoHS and Halogen-Free Complaint

100% UIS Tested

100% Rg Tested

SOIC-8
Top View
D
D

Bottom View

D
D

G
S

S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A

VGS
TA=25C

Pulsed Drain Current B

Avalanche Current G
Repetitive avalanche energy L=0.3mH
TA=25C
Power Dissipation A
TA=70C

Junction and Storage Temperature Range

Maximum Junction-to-Lead C

Rev.11.0 June 2013

Units
V

25

-12

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

-30

Maximum

ID

-10

IDM

-60

IAR

-26

EAR

101

mJ

3.1

PD

2.0

TJ, TSTG

Symbol
t 10s
Steady State
Steady State

RJA
RJL

-55 to 150

Typ
32
60
17

Max
40
75
24

Units
C/W
C/W
C/W

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Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID = -250A, VGS = 0V

-30

IGSS

Gate-Body leakage current

VDS = 0V, VGS = 25V

VGS(th)

Gate Threshold Voltage

VDS = VGS ID = -250A

-1.7

ID(ON)

On state drain current

VGS = -10V, VDS = -5V

-60

TJ = 55C

VGS = -20V, ID = -12A

TJ=125C

21

DYNAMIC PARAMETERS
Ciss
Input Capacitance

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

-0.7

2060
VGS=0V, VDS=-15V, f=1MHz

S
-1

-3

2600

pF

370

pF

295
VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs

11

17

Maximum Body-Diode Continuous Current

Reverse Transfer Capacitance

8.5

12.7

IS

Gate resistance

VGS = -6V, ID = -10A

IS = -1A,VGS = 0V

Rg

13

Diode Forward Voltage

Crss

nA

-3

15

VSD

Output Capacitance

100

10

VDS = -5V, ID = -10A

Coss

-2.3

11.5

Forward Transconductance

-5

VGS = -10V, ID = -12A

gFS

Units

-1

Zero Gate Voltage Drain Current

Static Drain-Source On-Resistance

Max

VDS = -30V, VGS = 0V

IDSS

RDS(ON)

Typ

VGS=-10V, VDS=-15V, ID=-12A

pF

2.4

3.6

30

39

nC

4.6

nC

Gate Drain Charge

10

nC

Turn-On DelayTime

11

ns

9.4

ns

24

ns

12

ns

VGS=-10V, VDS=-15V, RL=1.25,

RGEN=3

trr

Body Diode Reverse Recovery Time

IF=-12A, dI/dt=100A/s

30

Qrr

Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s

22

40

ns
nC

A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.11.0 June 2013

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

80
-10V

VDS= -5V

-6V
60

-5V
-ID(A)

-ID (A)

60

-4.5V

40

40
125C

-4V
20

20
25C

VGS= -3.5V
0

0
0

0.5

-VDS (Volts)
Figure 1: On-Region Characteristics

1.5

2.5

3.5

4.5

-VGS(Volts)
Figure 2: Transfer Characteristics

20
Normalized On
On-Resistance

1.8

15
RDS(ON) (m
)

VGS=-6V

10

VGS=-10V
VGS=-20V

0
0

1.6
1.4

VGS=-10V
ID=-12A

1.2

VGS=-6V
ID=-10A

1.0
0.8

dI/dt=100A/s
I12
20
F=-6.5A, 16

VGS=-20V
ID=-12A

-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

30

1E+01
ID=-12A
1E+00

25
20
-IS (A)

RDS(ON) (m
)

1E-01
125
15

125C

1E-02
1E-03

25C

1E-04

10
25

1E-05

5
3

10

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Rev.11.0 June 2013

1E-06
0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3000

10

Ciss
Capacitance (pF)

-VGS (Volts)

2500

VDS=-15V
ID=-12A

8
6
4
2

2000
1500
1000

Coss

500
Crss

0
0

10

15

20

25

30

Qg (nC)
Figure 7: Gate-Charge Characteristics

10

15

25

30

-VDS (Volts)
Figure 8: Capacitance Characteristics

10000

100
10s
10

1ms
1

10ms

RDS(ON) limited

100mss
0.1

TJ(Max)=150C
TA=25C

100

10

10s
DC

0.01
0.1

TJ(Max)=150C
TA=25C

1000

100s

Power (W)

-ID (Amps)

20

10
-VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100

1
0.00001

0.001

0.1

10

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)

Z JA Normalized Transient
Thermal Resistance

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=75C/W

0.1
PD
0.01

Ton
Single Pulse

0.001
0.00001

0.0001

Rev.11.0 June 2013

0.001

0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

100

1000

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G ate C harge Test C ircuit & W aveform

Vgs
Qg
-10V

VD C

VD C

Q gs

Vds

Qgd

DUT
V gs
Ig

C harge

Resistive Switching Test Circuit & Waveforms

RL
Vds

toff

ton

Vgs

DUT

Vgs

VDC

td(on)

t d(off)

tr

tf

90%

Vdd

Rg

Vgs

10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2

EAR= 1/2 LIAR

Vds
Vds

Id

Vgs

Vgs

VDC

Rg

BVDSS
Vdd
Id
I AR

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd
Vgs
Ig

Rev.11.0 June 2013

-Isd

+ Vdd

t rr

dI/dt
-I RM
Vdd

VDC

-I F

-Vds

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