Ordering number:EN1426B

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1381/2SC3503
High-Definition CRT Display,
Video Output Applications
Features

Package Dimensions

High breakdown voltage : VCEO300V.

Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
Adoption of MBIT process.

unit:mm
2009A
[2SA1381/2SC3503]

JEDEC : TO-126

B : Base
C : Collector
E : Emitter

Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

()300

Collector-to-Emitter Voltage

VCEO
VEBO

()300

IC

()100

mA

Collector Current (Pulse)

ICP

()200

mA

Collector Dissipation

PC

1.2

Emitter-to-Base Voltage
Collector Current

()5

150

55 to +150

Tc=25C
Junction Temperature

Tj

Storage Temperature

Tstg

Electrical Characteristics at Ta = 25C

Parameter

Symbol

Conditions

Collector Cutoff Current

ICBO

Emitter Cutoff Current

IEBO

VCB=()200V, IE=0
VEB=()4V, IC=0

DC Current Gain

hFE

VCE=()10V, IC=()10mA

Gain-Bandwidth Product

fT
Cob

VCE=()30V, IC=()10mA
VCB=()30V, f=1MHz

Output Capacitance
Reverse Transfer Capacitance

Cre

Ratings
min

typ

max
()0.1

()0.1

40*

VCB=()30V, f=1MHz

320*
150

MHz

2.6

pF

(3.1)

pF

1.8

pF

(2.3)
Collector-to-Emitter Saturation Voltage

VCE(sat)
VBE(sat)

Unit

pF

IC=()20mA, IB=()2mA

()0.6

()1.0

Collector-to-Emitter Breakdown Voltage

IC=()20mA, IB=()2mA
V(BR)CBO IC=()10A, IE=0
V(BR)CEO IC=()1mA, RBE=

Base-to-Emitter Breakdown Votage

V(BR)EBO

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

IE=()10A, IC=0

()300

()300

()5

* : The 2SA1381/2SC3503 are classified by 10mA hFE as follows :

40

80

60

120

100

200

160

320

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3107KI/D134MW, TS No.1426-1/4

2SA1381/2SC3503

No.1426-2/4

2SA1381/2SC3503

No.1426-3/4

2SA1381/2SC3503

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.1426-4/4