FDS6676AS

FDS6676AS
30V N-Channel PowerTrench SyncFET

Features
General Description
14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V

RDS(ON) max= 7.25 m @ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
The FDS6676AS is designed to replace a single SO-8 MOSFET

and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low RDS(ON) and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology.
High power and current handling capability
Applications
DC/DC converter
Low side notebook
SO-8
Absolute Maximum Ratings TA = 25C unless otherwise noted

Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation for Single Operation
Continuous
Units
30
20
(Note 1a)
14.5
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
Pulsed
TJ, TSTG
Ratings
50
Operating and Storage Junction Temperature Range
55 to +150
Thermal Characteristics
RJA
Thermal Resistance, Junction-to-Ambient
RJC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
C/W
(Note 1)
25
C/W
Package Marking and Ordering Information

Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676AS
FDS6676AS
13
12mm
2500 units
FDS6676AS
FDS6676AS_NL (Note 3)
13
12mm
2500 units
2005 Fairchild Semiconductor Corporation
FDS6676AS Rev. A (X)
www.fairchildsemi.com
FDS6676AS 30V N-Channel PowerTrench SyncFET
April 2005
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
DrainSource Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
TJ
Breakdown Voltage Temperature

Coefficient
ID = 1 mA, Referenced to 25C
30
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500
IGSS
GateBody Leakage
VGS = 20 V, VDS = 0 V
100
nA
mV/C
28
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
VGS(th)
TJ
Gate Threshold Voltage

Temperature Coefficient
ID = 1 mA, Referenced to 25C
3.3
1.5
RDS(on)
Static DrainSource
OnResistance
VGS = 10 V, ID = 14.5 A
VGS = 4.5 V, ID = 13.2 A
VGS = 10 V, ID = 14.5A, TJ = 125C
4.9
5.9
6.7
ID(on)
OnState Drain Current
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V, ID = 14.5 A
66
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2510
pF
mV/C
6.0
7.25
8.5
50
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
710
pF
270
pF
VGS = 15 mV, f = 1.0 MHz
1.6
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
10
20
ns
12
22
ns
Switching Characteristics (Note 2)

td(on)
TurnOn Delay Time
tr
TurnOn Rise Time
td(off)
TurnOff Delay Time
43
69
ns
tf
TurnOff Fall Time
29
46
ns
td(on)
TurnOn Delay Time
tr
TurnOn Rise Time
td(off)
tf
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
17
31
ns
22
35
ns
TurnOff Delay Time
34
54
ns
TurnOff Fall Time
29
46
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
45
63
nC
Qg
Total Gate Charge at Vgs=5V
25
35
nC
Qgs
GateSource Charge
nC
Qgd
GateDrain Charge
nC
VDD = 15 V, ID = 14.5 A,
2
Electrical Characteristics TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
0.4
0.5
0.7
DrainSource Diode Characteristics and Maximum Ratings

VSD
DrainSource Diode Forward Voltage
trr
Diode Reverse Recovery Time
IRM
Diode Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
(Note 2)
IF = 14.5A,
diF/dt = 300 A/s
(Note 3)
(Note 2)
27
nS
1.9
26
nC
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50/W when mounted
on a 1 in2 pad of 2 oz
copper
b) 105/W when mounted

on a .04 in2 pad of 2 oz
copper
c) 125/W when mounted

on a minimum pad.
See SyncFET
Schottky body diode
characteristics below
Scale 1 : 1 on letter size paper

2.
Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3.
FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label.
3
Electrical Characteristics TA = 25C unless otherwise noted (Continued)
2.4
50
VGS = 10V
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
ID, DRAIN CURRENT (A)
40
6.0V
4.5V
3.0V
30
20
10
2.5V
2.2
VGS = 3.0V
2
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
10V
1
0.8
0
0
0.25
0.5
0.75
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
50
0.016
ID = 7.3 A
RDS(ON), ON-RESISTANCE (OHM)
I D = 14.5A
VGS =10V
1.2
0.8
0.014
0.012
0.01
TA = 125 C
0.008
0.006
TA = 25C
0.6
-55
0.004
-35
-15
25
45
65
T J, JUNCTION TEMPERATURE (
85
o
105
125
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
C)
Figure 3. On-Resistance Variation with

Temperature.
10

Gate-to-Source Voltage.
100
50
VGS = 0V
IS , REVERSE DRAIN CURRENT (A)
V DS = 5V
40
I D, DRAIN CURRENT (A)
20
30

Drain Current and Gate Voltage.
1.4
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
30
TA = 125 C
-55C
20
25C
10
10
TA = 125C
25C
0.1
-55C
0.01
0.001
1
1.5
2.5
3.5
0.2
0.4
0.6
0.8
V GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.
4
Typical Characteristics
3500
10
f = 1MHz
VGS = 0 V
3000
8
VDS = 10V
CAPACITANCE (pF)
VGS , GATE-SOURCE VOLTAGE (V)
I D = 14.5A
20V
6
15V
4
2500
Ciss
2000
1500
Coss
1000
500
Crss
0
0
0
10
20
30
40
50
Q g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
25
30
Figure 8. Capacitance Characteristics.

50
100
100s
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
10
15
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
1ms
10
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
R JA = 125 C/W
0.1
T A = 25C
0.01
0.01
0.1
10
30
20
10
0
0.001
100
SINGLE PULSE
R JA = 125C/W
TA = 25C
40
0.01
0.1
10
100
1000
t1 , TIME (sec)
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum

Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE
1
D = 0.5
R JC(t) = r(t) * R JC
R JC = 125 C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
T J - T C = P * R JC (t)
Duty Cycle, D = t 1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6676AS Rev A (X)
5
SyncFET Schottky Body Diode Characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
Fairchilds SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6676AS.
0.8A/DIV
I DSS, REVERSE LEAKAGE CURRENT (A)
0.1
TA = 125 C
0.01
TA = 100 C
0.001
0.0001
TA = 25 C
0.00001
0
10
15
20
25
30
VDS , REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse leakage

versus drain-source voltage and temperature.
10nS/DIV
Figure 12. FDS6676AS SyncFET body diode

reverse recovery characteristic.
0.8A/DIV
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6676).
10nS/DIV
Figure 13. Non-SyncFET (FDS6676) body diode

reverse recovery characteristic.
6
Typical Characteristics (continued)
VDS
BVDSS
tP
VGS
RGE
VDS
DUT
IAS
VDD
VGS
VDD
0V
IAS
tp
vary tP to obtain
required peak IAS
0.01
tAV
Figure 15. Unclamped Inductive

Load Test Circuit
Figure 16. Unclamped Inductive

Waveforms
Drain Current
Same type as
50k
10V
10 F
1 F
VDD
QG(TOT)
VGS
10V
DUT
QGD
QGS
VGS
Ig(REF)
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform

tON
VDS
RL
VDS
tr
90%
tOFF
td(OFF)
tf
90%
VGS
RGEN
td(ON)
VDD
DUT
10%
0V
10%
90%
VGS
VGS
50%
Pulse Width 1s
Duty Cycle 0.1%
0V
Figure 19. Switching Time

Test Circuit
Figure 19. Switching Time Waveforms
7
10%
50%
Pulse Width
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
8
TRADEMARKS

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FDS6676AS

30V N-Channel PowerTrench SyncFET

14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V

The FDS6676AS is designed to replace a single SO-8 MOSFET

High power and current handling capability

Absolute Maximum Ratings TA = 25C unless otherwise noted

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

2005 Fairchild Semiconductor Corporation

FDS6676AS Rev. A (X)

FDS6676AS 30V N-Channel PowerTrench SyncFET

DrainSource Breakdown Voltage

Breakdown Voltage Temperature

ID = 1 mA, Referenced to 25C

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Gate Threshold Voltage

ID = 1 mA, Referenced to 25C

OnState Drain Current

Reverse Transfer Capacitance

VGS = 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

TurnOn Delay Time

TurnOn Rise Time

TurnOff Delay Time

TurnOff Fall Time

TurnOn Delay Time

TurnOn Rise Time

TurnOff Delay Time

TurnOff Fall Time

Total Gate Charge at Vgs=10V

Total Gate Charge at Vgs=5V

FDS6676AS 30V N-Channel PowerTrench SyncFET

Electrical Characteristics TA = 25C unless otherwise noted

DrainSource Diode Characteristics and Maximum Ratings

DrainSource Diode Forward Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Current

Diode Reverse Recovery Charge

b) 105/W when mounted

c) 125/W when mounted

Scale 1 : 1 on letter size paper

FDS6676AS 30V N-Channel PowerTrench SyncFET

Electrical Characteristics TA = 25C unless otherwise noted (Continued)

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

RDS(ON), ON-RESISTANCE (OHM)

Figure 3. On-Resistance Variation with

Figure 4. On-Resistance Variation with

IS , REVERSE DRAIN CURRENT (A)

I D, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

V GS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

FDS6676AS 30V N-Channel PowerTrench SyncFET

VGS , GATE-SOURCE VOLTAGE (V)

Q g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.