B.Tech.

II Year / I Semester
14EEE105

ELECTRONIC DEVICES
L T P C
3 2 0 3

Course Prerequisite: 14EEE101,14PHY101, 14CHE101

Course Description:
The course provides a comprehensive understanding of the fundamental theory of semiconductors and the operation
of commonly used electronic devices such as junction diodes, Field Effect Transistors (FET) and Bipolar Junction
Transistor (BJT). The relations between material properties and terminal behaviors of devices are derived. Advanced
topics covered include optoelectronic devices.
This course covers Energy Bands and Charge carriers in Semiconductors, Crystal Properties and Growth of
Semiconductors, Excess Carriers in Semiconductors, Junction concepts, BJTs, FETs and optoelectronic devices.
Course Objectives:
1. Understand energy band structures in semiconductors using Quantum mechanics.
2. Study of motion of charged particles in electric and magnetic fields.
3. Understand generation of excess carriers by photo excitation.
4. Understand operation of PN Junction diode and BJT.
5. Understand the operation of FET and opto-electronic devices.
UNIT-I: SEMICONDUCTOR BASICS
Crystal Lattices, Crystal structure and Diamond Structure-Foundations of Quantum Mechanics for understanding
semiconductors- Schrodinger equation- Energy Bands and Band Structure, Effective Mass
UNIT-II: CHARGE CARRIERS
Charge Carriers in Semiconductors, Carrier Concentrations, Fermi Level, Drift of Carriers in Electric and Magnetic
Fields, Temperature dependence, Interaction of photons with semiconductors.
UNIT-III: EXCESS CARRIERS & JUNCTION CONCEPTS
Excess Carriers and Optical absorption, Generation and recombination mechanisms, Luminescence, Carrier Lifetime
and Photoconductivity, Diffusion of Carriers, Continuity equation, Quasi Fermi Level- Junctions: Equilibrium
Conditions.
UNIT- IV: JUNCTIONS &BJT
P-N Junctions, I-V Characteristics, Forward- and Reverse-Biased Junctions, Reverse-Bias Breakdown, Varactor
diode, Metal Semiconductor Junctions.
Bipolar Junction Transistors: Generalized Biasing, I-V Characteristics
UNIT-V: FIELD EFFECT TRANSISTORS AND OPTOELECTRONIC DEVICES
Field Effect Transistors: The Junction FET, MOSFET, I-V Characteristics.
Optoelectronic Devices: Photodiodes, Light-Emitting Diodes, Lasers, Semiconductor Lasers, Tunnel Diodes
Course Outcomes:
At the end of the course, students will able to
1. Draw energy band diagram for insulators, semiconductors and conductors.
2. Estimate drifts velocity of charged particles in electric and magnetic fields.
3. Compute lifetime of excess carriers.
4. Compute Diode current and I-V characteristics of BJT.
5. Draw I-V characteristics of JFET, MOSFET, LED and LASER diode.
TEXT BOOKS:
1. B. G. Streetman, and Sanjay Banerjee, Solid State Electronic Devices, 6th Ed., PHI, 2006
REFERENCES:
1. D A. Neaman, Semiconductor Physics and Devices, 3rd Ed., Tata McGraw Hill