CH 9 SEMI-CONDUCTOR DEVICES

#) Energy band of a solid. The large number of energy levels confined in a small
region of energy range of a given solid, constitute what is known as energy
bands.
In some solids, there is an energy gap in between the energy bands. This
energy gap is called forbidden gap. The energy band above the forbidden gap is
called conduction band and the energy band below the forbidden gap is called
valence band.
The conductivity of a solid depends upon the number of electrons present in
the conduction band and number of holds present in valence band.
#) Classification of metals, insulators and semi-conductor on the basis of
energy bands
(A) In metals. The conduction band and valence band partly overlap each other
and there is no forbidden energy gap.
(b) In insulators, the conduction band is empty and valence band is completely
filled and forbidden gap is quite large = 6 eV. No electron from valence band
can cross over to conduction band at room temperature, even if electric field is
applied. Hence there is no conductivity of the insulators.
(C) In semiconductor. The conduction band is empty and valence band is totally
filled at 0K but the forbidden gap between conduction band and valence band
is quite small, which us about 1eV. No electron from valence band can cross
over to conduction band at 0K. Therefore ,the semiconductor behaves as
insulator at 0K. At room temperature, some electrons in the valence band
acquire thermal energy, greater than energy gap of 1 eV and jump over to the
conduction band where they are free to move under the influence of even a
small electric field. Due to which, the semiconductor acquires small
conductivity at room temperature.

#)Hole. It is a seat of positive charge which is produced when an electron

breaks away from a covalent bond in a semiconductor. Hole has a positive
charge equal to that of electron. Mobility of hole is smaller than that of
electron.
#)Doping. It is a process of deliberate addition of a desirable impurity to a pure
semiconductor to modify its properties in a controlled manner. The impurity
atoms added are called do pants. The impurity added may be = 1 in 1010 atoms.
#) Extrinsic semiconductor. A doped semiconductor or a semiconductor with
suitable impurity Atoms added to it is called extrinsic semiconductor. Extrinsic
semiconductor are of two types
(I) n-type semiconductor. When a pure semiconductor of Ge or Si is doped with
a controlled amount of pentavalent atoms, say arsenic or phosphorus or
antimony or bismuth. We get n-type semiconductor or donor type semiconductor.
It is called n-type semiconductor because the conduction of electricity in such
semiconductor is due to motion of electrons I.e. negative charges, or n-type
carriers. It is called donor type, because the doped impurity atom donates one
free electron to semiconductor for conduction.
In n-type semiconductor electrons are majority carries and holes are minority
carries.
(ii) p-type semiconductor. When a pure semiconductor of Ge or Si is doped
with a controlled amount of trivalent atoms, say indium or Boron or aluminum,
we get p-type semiconductor or accepter type semiconductor. It is called ptype because the conduction of electricity in such semiconductor is due to
motion of holes I.e. positive charges. It is called acceptor type semi-conductor
because the doped impurity atom creates a hole in semiconductor which
accepts the electron, resulting conduction in p-type semi-conductor.
In p-type semiconductor, holes are majority carriers and electric are minority
carriers.
#)Effect of temperature om conductivity of semi conductor. With the increase
in temperature, more number of covalent bonds is broken, resulting large

increase in current carrier concentration. Due to which the conductivity of

semiconductor increase.
Mobility of electrons as well as holes in a semiconductor decreases with
increase in temperature.
#)p-n junction. When a p-type crustal is brought into close contact with n-type
crystal, the resulting arrangement is called p-n junction or junction diode.
#)Depletion region. It is a layer created around the junction which is devoid of
free charge carriers and has immobile ions.
#)Forward biasing of p-n junction. When positive terminal of external battery
is connected to p-side and negative to n-side of p-n junction, the p-n junction is
said to be forward biased. In forward biasing, the conduction across p-n
junction takes place due to migration of majority carriers. The size of the
depletion region decreases. The resistance of the p-n junction becomes low.
#)Reverse biasing of p-n junction. A p-n junction is said to be reverse biased if
the positive terminal of the external battery is connected to n-side and the
negative terminal to p-side of p-n Junction. In reverse biasing, the conduction
across the p-n Junction does not take place due to majority carriers but takes
place to minority carriers if the voltage of external battery is large. The size of
the depletion region increases. The resistance of the p-n junction becomes high
in reverse biasing..
#)Characteristics of p-n junction diode. The graphical relations between
forward bias voltage and forward current are called forward characteristics.
The graphical relations between reverse bias voltage and reverse current is
called reverse characteristics of p-n junction.
#) Knee voltage. It is the forward voltage beyond which the current through
the junction starts to increase rapidly with linear variation. But below the knee
voltage, the characteristics curve is non linear.
The knee voltage for Si is 0.7V and for Ge is 0.3 V.
#)Junction-Transistor. It is a semiconductor devise which is obtained by
growing thin layer of one type semiconductor in between two thick layers of

other similar type semiconductor I.e. the semiconductor device is having two
junctions and three terminals.
If central thin layer is of p-type and outer thick layers are of n-type
semiconductor , we get n-p transistor. If central thin layer is of n-type and
outer thick layers are of p-type semiconductor, we get p-n-p transistor.
The thin layer of junction transistor is said to form the base (B). One of the
thick layers serves as emitter (E) and the other thick layer serves as collector
(C).
The function of emitter is to emit the majority carriers. Function of collector is
to collect the majority carriers and base provides the proper interact between
the emitter and the collector.
#) Analogue signal. A continuous time varying current or voltage signal is called
analogue signal.
#)Analogue circuit. An electronic circuit which gives out any type of analogue
signals is called analogue circuit.
#)Digital signal. A signal which has two levels of voltage is called digital signal.
#)Logic gate. A digital circuit which either allows a signal to pass through or
stops it, is called gate. Such gate allows the signal to pass through only when
some logical conditions are satisfied. Hence they are called logic gates.
#)Truth table. It is a table that shows all possible input combination and the
corresponding output combination for a logic gate. It is also called a table of
combinations.