Name:

Matric No:

INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

MID TERM EXAMINATION
SEMESTER 2, 2010/2011 SESSION
KULLIYYAH OF ENGINEERING

Program

: ENGINEERING

Level of Study

: UG1

Time

: 10 am 12:00 pm

Date

: 12/2/2011

Duration

: 2 hours
Section(s)

: 1-10

Course Code : ECE 1312

Course Title

: Electronics

This Question Paper Consist of Four (5) Printed Pages (Including Cover Page) With Four (4)
Questions.

INSTRUCTION(S) TO CANDIDATES
DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

Total mark of this examination is 100

This examination is worth 15% of the total final assessment.

Answer all 4 (Four) questions.

Any form of cheating or attempt to cheat is a serious offence which may lead to
dismissal.

Electronics

Q.1

ECE 1312

[20 marks]

a) Silicon with an intrinsic carrier concentration of 1.5 x 1010 /cm3 is doped with 5 x 1016
atoms/cm3 of an element X. After doping, silicon becomes an n-type material.
(10 marks)
i)
Give an example of element X.

ii)

Calculate the electron and hole concentrations in the material at T= 300K.

Electronics

iii)

ECE 1312

Consider a p-n junction with the n-type doping the same as above, 5 x 1016
atoms/cm3. If the built in voltage is to be 0.712 V , what is the p-type doping
concentration?

b) Describe the difference between drift and diffusion currents and state their governing
equations
(5 marks)

Electronics

ECE 1312

c) For the circuits shown in Fig. 1(c), assume that V = 0.7 V. Calculate the current I and
voltage V.
(5 marks)

Fig. 1(c)

Electronics

Q.2

ECE 1312

[20 marks]

a) The full wave rectifier circuit shown in Fig. 2(a) has an input signal whose frequency is
50 Hz. The rms value of s = 8.5 V Assume each diode cut-in
in voltage is V = 0.7 V.
(5 marks)
i.
What is the maximum value of vo?
ii.
What is the Peak Inverse
nverse Voltage (PIV) rating of each diode?

Fig.2(a)

Electronics

ECE 1312

b) The
he diode circuit shown in Fig. 2(b)(ii) has a square wave input shown in Fig. 2(b)(i).
Plot the Vo against time. As
Assume a cut-in voltage, V = 0.6 V and VB = 5 V. (5 marks)
15
V

-5 V

(i)
Fig. 2(b)(i)

Fig. 2(b)(ii)

Electronics

ECE 1312

c) The clamper circuit shown in Fig. 2(c)(i) has a sinusoidal wave input shown in Fig.
2(b)(ii) with VM = 5 V. Plot the Vo against time. Assume a cut-in voltage, V = 0.7 V.
(5 marks)

Fig. 2(c)(i)

Fig. 2(c)(ii)

Electronics

ECE 1312

d) A Zener diode circuit is shown in Fig. 2(d). Calculate RL such that IZ = 0.1 IR. (5 marks)

IR

Fig. 2(d)

IRL

Electronics

Q.3

ECE 1312

[20 marks]

a) The npn transistor shown in Fig. 3(a) has a current source, IE = 1.5 mA and = 100.
Determine IB, IC, and VC. What mode is the transistor operating in?
(5 marks)

Fig. 3(a)

Electronics

ECE 1312

b) The pnp transistor shown in Fig. 3(b) has = 100. Plot the voltage transfer characteristic
(VO versus VI) over the range 0 VI 5 V.
(7 marks)

Fig. 3(b)

Electronics

ECE 1312

c) The pnp transistor shown in Fig. 3(c) is operating in saturation with VEC (sat) = 0.2 V and
VEB = 0.7V. Calculate IB, IC, IE and . Sketch the load line and plot the Q-point values for
the IC versus VEC graph.
(8 marks)

Fig. 3(c)