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OptiMOS Power-Transistor
Product Summary
Features
For fast switching converters and sync. rectification
N-channel enhancement - logic level
V DS
60
R DS(on),max
64
ID
18
Type
IPD640N06L G
Type
Package
PG-TO252-3
IPD640N06L
G
Marking
640N06L
PG-TO252-3
Symbol Conditions
ID
Value
T C=25 C
18
T C=100 C
12
Unit
A
I D,pulse
T C=25 C1)
72
E AS
I D=18 A, R GS=25
43
mJ
dv /dt
I D=18 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 C
kV/s
V GS
Power dissipation
P tot
T j, T stg
T C=25 C
Rev. 1.2
20
47
55/175/56
See figure 3
page 1
2006-03-27
IPD640N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
3.2
minimal footprint
75
50
60
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
K/W
V GS(th)
1.2
1.6
I DSS
V DS=60 V, V GS=0 V,
T j=25 C
0.01
V DS=60 V, V GS=0 V,
T j=125 C
100
I GSS
V GS=20 V, V DS=0 V
10
100
nA
R DS(on)
V GS=10 V, I D=18 A
47
64
V GS=4.5 V, I D=12 A
64
85
1.2
9.5
19
Gate resistance
RG
Transconductance
g fs
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 2
2006-03-27
IPD640N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
350
470
94
130
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
C rss
35
53
t d(on)
Rise time
tr
25
38
t d(off)
32
48
Fall time
tf
32
48
Q gs
1.4
1.9
Q g(th)
0.5
0.7
Q gd
3.6
5.4
Switching charge
Q sw
4.5
6.5
Qg
10
13
V plateau
4.2
Output charge
Q oss
18
72
0.99
1.3
30
45
ns
20
30
nC
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=15 A, R G=22
pF
ns
V DD=30 V, I D=18 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
Reverse Diode
Diode continous forward current
IS
I S,pulse
V SD
t rr
T C=25 C
V GS=0 V, I F=18 A,
T j=25 C
V R=30 V, I F=I S,
di F/dt =100 A/s
Reverse recovery charge
3)
Rev. 1.2
Q rr
page 3
2006-03-27
IPD640N06L G
1 Power dissipation
2 Drain current
50
20
40
15
I D [A]
P tot [W]
30
10
20
5
10
0
0
50
100
150
200
50
100
T C [C]
150
200
T C [C]
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
102
101
1 s
10 s
limited by on-state
resistance
100 s
0.5
100
1 ms
I D [A]
DC
Z thJC [K/W]
101
10 ms
0.2
0.1
0.05
0.02
100
10-1
0.01
single pulse
10-1
10
10-2
-1
10
10
10
V DS [V]
Rev. 1.2
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2006-03-27
IPD640N06L G
5 Typ. output characteristics
parameter: V GS
parameter: V GS
120
30
4V
3.5 V
5V
10 V
5.5 V
100
4.5 V
4.5 V
80
R DS(on) [m]
I D [A]
20
4V
5V
60
5.5 V
10 V
40
10
3.5 V
20
3V
0
0
10
V DS [V]
20
30
I D [A]
parameter: T j
30
25
25
20
25 C
20
g fs [S]
I D [A]
15
175 C
15
10
10
0
0
Rev. 1.2
10
15
20
I D [A]
V GS [V]
page 5
2006-03-27
IPD640N06L G
9 Drain-source on-state resistance
160
2.5
140
2
120
80
V GS(th) [V]
R DS(on) [m]
160 A
100
98 %
60
1.5
16 A
typ
40
0.5
20
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [C]
T j [C]
11 Typ. capacitances
I F=f(V SD)
parameter: T j
102
1000
25 C 98%
175 C 98%
25 C
Ciss
175 C
I F [A]
C [pF]
10
Coss
100
100
Crss
10-1
10
0
10
15
20
25
30
Rev. 1.2
V SD [V]
V DS [V]
page 6
2006-03-27
IPD640N06L G
13 Avalanche characteristics
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12V
48 V
10
V GS [V]
I AV [A]
25 C
100 C
4
150 C
0
1
10
100
1000
10
12
Q gate [nC]
t AV [s]
75
V GS
Qg
V BR(DSS) [V]
70
65
V g s(th)
60
55
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [C]
Rev. 1.2
page 7
2006-03-27
IPD640N06L G
PG-TO252-3: Outline
packaging:
Rev. 1.2
page 8
2006-03-27
IPD640N06L G
Published by
Infineon Technologies AG
81726 Mnchen, Germany
Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.2
page 9
2006-03-27