1N5221B to 1N5267B

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Vishay Semiconductors

Small Signal Zener Diodes

FEATURES
Silicon planar power Zener diodes
Standard Zener voltage tolerance is 5 %
These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations
MMSZ5225 to MMSZ5267
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

PRIMARY CHARACTERISTICS
PARAMETER

VALUE

Halogen-free according to IEC 61249-2-21 definition

UNIT

VZ range nom.

2.4 to 75

Test current IZT

1.7 to 20

mA

VZ specification

Thermal equilibrium

Int. construction

Single

APPLICATIONS
Voltage stabilization

ORDERING INFORMATION
DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

1N5221B to 1N5267B

1N5221B to 1N5267B-series-TR

10 000 per 13" reel

30 000/box

1N5221B to 1N5267B

1N5221B to 1N5267B-series-TAP

10 000 per ammopack

(52 mm tape)

30 000/box

PACKAGE
PACKAGE NAME
DO-35

WEIGHT
125 mg

MOLDING COMPOUND MOISTURE SENSITIVITY

FLAMMABILITY RATING
LEVEL
UL 94 V-0

MSL level 1
(according J-STD-020)

SOLDERING
CONDITIONS
260 C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER
Power dissipation

TEST CONDITION

SYMBOL

VALUE

UNIT

TL 25 C

Ptot

500

mW

IZ

Ptot/VZ

mA

I = 4 mm, TL = constant

RthJA

300

K/W

Tj

175

Tstg

- 65 to + 175

VF

1.1

Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)

Rev. 2.0, 31-Jan-12

IF = 200 mA

Document Number: 85588

1
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1N5221B to 1N5267B
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ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

ZENER VOLTAGE
RANGE (1)
PART NUMBER

VZ at IZT1

TEST CURRENT
IZT1

V
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B

NOM.
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75

IZT2
mA

20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7

0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25

REVERSE
LEAKAGE
CURRENT

DYNAMIC RESISTANCE
f = 1 kHz
ZZ at IZT1 (1)

IR at VR
A

MAX.
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1

1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56

ZZK at IZT2

MAX.
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270

TEMPERATURE
COEFFICIENT
VZ
%/K

MAX.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700

TYP.
- 0.085
- 0.085
- 0.08
- 0.08
- 0.075
- 0.07
- 0.065
- 0.06
0.055
0.03
0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.09
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098

Note
(1) Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
Rev. 2.0, 31-Jan-12

Document Number: 85588

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5221B to 1N5267B
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Vishay Semiconductors

RthJA - Therm. Resist. Junction Ambient (K/W)

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

400
300
l

200
100
TL = constant
0
0

10

600

Ptot - Total Power Dissipation (mW)

500

500
400
300
200
100
0
0

20

15

I - Lead Length (mm)

95 9611

Fig. 1 - Thermal Resistance vs. Lead Length

95 9602

Fig. 4 - Total Power Dissipation vs. Ambient Temperature

15

TKVZ - Temperature Coefficient

of VZ (10-4/K)

VZ - Voltage Change (mV)

1000

Tj = 25 C
100

IZ = 5 mA
10

10

5
IZ = 5 mA
0

-5

1
0

10

15

25

20

VZ - Z-Voltage (V)

95 9598

10

20

30

40

50

VZ - Z-Voltage (V)

95 9600

Fig. 2 - Typical Change of Working Voltage under Operating

Conditions at Tamb= 25 C

Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage

1.3

200

VZtn = VZt/VZ (25 C)

1.2

TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K

1.1

-4

4 x 10 /K
2 x 10-4/K

1.0

- 2 x 10-4/K
- 4 x 10-4/K

0.9

CD - Diode Capacitance (pF)

VZtn - Relative Voltage Change

80
120
160 200
40
Tamb - Ambient Temperature (C)

150
VR = 2 V
Tj = 25 C
100

50

0.8
- 60
95 9599

60

120

180

240

Tj - Junction Temperature (C)

Fig. 3 - Typical Change of Working Voltage vs.

Junction Temperature
Rev. 2.0, 31-Jan-12

0
95 9601

10

15

20

25

VZ - Z-Voltage (V)

Fig. 6 - Diode Capacitance vs. Z-Voltage

Document Number: 85588

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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1N5221B to 1N5267B
Vishay Semiconductors

100

50

10

40

IZ - Z-Current (mA)

IF - Forward Current (mA)

www.vishay.com

Tj = 25 C

0.1

0.01

30

20

10

0.001
0

0.2

0.4

0.6

1.0

0.8

15

VF - Forward Voltage (V)

95 9605

20

25

30

35

VZ - Z-Voltage (V)

95 9607

Fig. 7 - Forward Current vs. Forward Voltage

Fig. 9 - Z-Current vs. Z-Voltage

1000

rZ - Differential Z-Resistance ()

100

80

IZ - Z-Current (mA)

Ptot = 500 mW
Tamb = 25 C

Ptot = 500 mW
Tamb = 25 C
60

40

20

IZ = 1 mA
100

5 mA
10 10 mA

Tj = 25 C

0
0

12

20

VZ - Z-Voltage (V)

95 9604

10

15

20

25

VZ - Z-Voltage (V)

95 9606

Fig. 8 - Z-Current vs. Z-Voltage

Zthp - Thermal Resistance for Pulse Cond. (KW)

Fig. 10 - Differential Z-Resistance vs. Z-Voltage

1000

tp/T = 0.5

100

tp/T = 0.2
Single Pulse

RthJA = 300 K/W

T = Tjmax - Tamb

10

tp/T = 0.01
tp/T = 0.1

tp/T = 0.02

tp/T = 0.05

1
10-1

iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)

100

101
tp - Pulse Length (ms)

102
95 9603

Fig. 11 - Thermal Response

Rev. 2.0, 31-Jan-12

Document Number: 85588

4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5221B to 1N5267B
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Vishay Semiconductors

PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx

3.9 max. [0.154]

3.1 min. [0.120]

26 min. [1.024]

1.5 [0.059]

26 min. [1.024]

1.7 [0.067]

0.4 min. [0.015]

0.55 max. [0.022]

Cathode Identification

Rev. 1 - Date: 19. December 2011

Document no.: S8-V-3906.04-031(4)
94 12648

Rev. 2.0, 31-Jan-12

Document Number: 85588

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 12-Mar-12

Document Number: 91000