2SK4033

TOSHIBA Field Effect Transistor

Silicon N-Channel MOS Type (U-MOS III)

2SK4033
Chopper Regulator, DC/DC Converter and Motor Drive
Applications

Unit: mm

z 4 V gate drive
z Low drainsource ON-resistance

: RDS (ON) = 0.07 (typ.)

z High forward transfer admittance

: |Yfs| = 6.0 S (typ.)

z Low leakage current

: IDSS = 100 A (max) (VDS = 60 V)

z Enhancement mode

: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristic

Symbol

Rating

Unit

Drainsource voltage

VDSS

60

Draingate voltage (RGS = 20 k)

VDGR

60

Gatesource voltage

VGSS

20

(Note 1)

ID

Pulse (Note 1)

IDP

20

Drain power dissipation (Tc = 25C)

PD

20

Single-pulse avalanche energy

(Note 2)

EAS

40.5

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

55~150

Drain current

DC

JEDEC

JEITA

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (chc)

6.25

C / W

Thermal resistance, channel to

ambient

Rth (cha)

125

C / W

Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 25 V, Tch = 25C (initial), L = 2.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

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2SK4033
Electrical Characteristics (Ta = 25C)
Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 16 V, VDS = 0 V

10

Drain cutoff current

IDSS

VDS = 60 V, VGS = 0 V

100

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

Vth

VDS = 10 V, ID = 1 mA

1.3

2.5

VGS = 4 V, ID = 2.5 A

0.09

0.15

VGS = 10 V, ID = 2.5 A

0.07

0.10

VDS = 10 V, ID = 2.5 A

3.0

6.0

730

VDS = 10 V, VGS = 0 V, f = 1 MHz

60

Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON-resistance

RDS (ON)

Forward transfer admittance

|Yfs|

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss

95

tr

10

ton

20

Rise time

Turnon time
Switching time

pF

ns
Fall time

tf

Turnoff time

toff

35

Total gate charge (gatesource

plus gatedrain)

Qg

15

Gatesource charge

Qgs

11

Gatedrain (Miller) charge

Qgd

VDD 48 V, VGS = 10 V, ID = 5 A

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

Pulse drain reverse current

(Note 1)

IDRP

20

Forward voltage (diode)

VDSF

1.7

Reverse recovery time

trr

34

ns

Reverse recovery charge

Qrr

28

IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / s

Marking

K4033

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK4033

10

10

Common source

Tc = 25C
Tc=25
Pulse test

3.3
8

4
Drain
current
ID
(A)

10

Drain
current
ID
(A)

3
3

2
VGS=2.8V

6
3.3

4
3

VGS=2.8V

Common source
Tc=25
Tc = 25C

Pulse test

0.4

0.8

1.2

1.6

Drain-source voltage VDS

(V)

10

2
Common source

Tc = 25C
=25
Pulse test

1.6

1.2

DS

(V)

Common source

= 10 V
VV
=10V
DSDS
Pulse test

Drain-source voltage

10

Drain current
ID (A)

Drain-source voltage VDS

(V)

100

25

2
Tc=-55

0.8

0.4
2.5

=1.2A

Gate-source
voltage VGS
(V)

(V)

Yfs ID

12

16

20

(on)

0.5

100

Common source

Ta = 25C
=25
Pulse test

0.4

DS

(on)(m

Drain-sourceRON
RDS (ON) ()
DSresistance
(ON) (m)

Common source
VDS = 10 V
Pulse test

Tc = 55C

100
25

0.1
0.1

10

0.3

10

Forward
transfer admittance YY
fsfs(S) (S)

Gate-source
voltage VGS
(V)

0.2
4V

0.1
VGS=10V

100

ID (A)
(A)
Drain current ID

10

Drain
current ID
(A)

(A)

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2SK4033

10
5

10

Drain
reverse currentIDR
(A)

(on)()

Common
source

Pulse test

0.15

=5A
2.5

1.2
5
1.2

0.1
2.5

VGS=4V

0.05
VGS=10V

0
-80

-40

0
40
80
Ambient )
temperature Ta (C)

120

1
VGS=0V
V
GS = 0 V

Common source

Tc = 25C
=25
Pulse test

0.1

160

-0.2

-0.4
-0.6
-0.8
-1.0
Drain-source
voltage VDS
(V)

-1.2

Capacitance

VDS
2.6
Common source

VGS = 0 V
VGS=0V
f=1MHz
f = 1 MHz
Tc=25
Tc = 25C

Common source

= 10 V
VVDSDS
=10V
= 1 mA
ID
=1mA

2.4

1000

Gate threshold
Vth (V)

voltage
Vth(V)

10000

Capacitance C (pF)
()

Ciss

100

Coss

Pulse test

2.2
2
1.8
1.6
1.4
1.2

Crss

10
0.1

10

-80

100

-40

Drain-source
voltage VDS
(V)

0
40
80
120
()
Case
temperature Tc (C)

160

Dynamic input / output

characteristics

Common source

ID = 5 A
=5A
Tc = 25C
=25
Pulse test

PD

(W)

Drain-source voltage VDS (V)

VS

40

20

15

30
V

20

10

V =V

10

Gate-source voltage
VGS (V)

25

50

Drain power dissipation

Drain-source ON resistance RDS (ON) ()

0.2

VGS

0
0

Case temperature Tc (C)

10
15
20

Total gate charge Qg (nC)

25

30

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2SK4033
rth tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)

10

Duty = 0.5
0.2

Single pulse
PDM

0.1
0.1

0.05

0.02
0.01

0.01
10

Duty = t/T
Rth (ch-c) = 6.25C/W
100

1m

100 m

10 m

Pulse width

tw (s)

EAS Tch

SAFE
OPERATING AREA

50

EAS (mJ)

100

IDIDmax()*
max (pulse)*
1ms*

100s*

max()
IDIDmax
(continuous)

Avalanche energy

Drain current ID
(A)

10

10

DC OPERATION

Tc=25
TC =25C

0.1

with increase in temperature.

20

10

50

V DSS max

must
be

Curves
derated linearly

30

0
25

* Single pulse

*Tc=25
Tc = 25C

40

75

100

125

Channel temperature (initial)

150

Tch (C)

0.01
0.1

1
10

Drain-source voltage VDS

(V)

100

15 V

BVDSS
IAR

0V
VDD
Test circuit
RG = 25
VDD = 25 V, L = 2.2 mH

VDS
Waveform

AS =

1
B VDSS

L I2
B

V
VDSS
DD

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2SK4033

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2006-11-20