ADVANCED

LINEAR
DEVICES, INC.

ALD1106/ALD1116

QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY

GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1106/ALD1116 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for switching and amplifying applications
in +2V to +12V systems where low input bias current, low input capacitance
and fast switching speed are desired. These MOSFET devices feature very
large (almost infinite) current gain in a low frequency, or near DC, operating
environment. The ALD1106/ALD1116 are building blocks for differential
amplifier input stages, transmission gates, and multiplexer applications,
current sources and many precision analog circuits.

FEATURES
Low threshold voltage of 0.7V
Low input capacitance
Low Vos 2mV typical
High input impedance -- 1014 typical
Negative current (I DS) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10 9
Low input and output leakage currents

APPLICATIONS

Precision current mirrors

Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing

PIN CONFIGURATION
ALD1116
DN1

DN2

GN1

GN2

SN1

SN2

V-

V+

DA, PA, SA PACKAGE

ALD1106

ORDERING INFORMATION
Operating Temperature Range*
-55C to +125C
0C to +70C
0C to +70C
8-Pin CERDIP
Package

8-Pin Plastic Dip

Package

8-Pin SOIC
Package

ALD1116 DA

ALD1116 PA

ALD1116 SA

DN1

14

DN2

GN1

13

GN2

SN1

12

SN2

V-

11

V+

DN4

10

DN3

14-Pin CERDIP
Package

14-Pin Plastic Dip

Package

14-Pin SOIC
Package

GN4

GN3

ALD1106 DB

ALD1106 PB

ALD1106 SB

SN4

SN3

DB, PB, SB PACKAGE

* Contact factory for industrial temperature range.

BLOCK DIAGRAM

BLOCK DIAGRAM
ALD1116

ALD1106

V+ (5)

V+ (11)
DN2 (14)

DN1 (1)

DN4 (5)

DN3 (10)

GN2 (13) GN3 (9)

GN1 (2)

SN1 (3)

V- (4)

SN2 (12)

DN1 (1)

GN4 (6)

SN3 (8)

V- (4)

SN4 (7)

DN2 (8)

GN1 (2)

GN2 (7)

SN1 (3)

V- (4)

SN2 (6)

1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage, VDS
Gate-source voltage, V GS
Power dissipation
Operating temperature range

13.2V
13.2V
500 mW
0C to +70C
-55C to +125C
-65C to +150C
+260C

PA, SA, PB, SB package

DA, DB package

Storage temperature range

Lead temperature, 10 seconds

OPERATING ELECTRICAL CHARACTERISTICS

T A = 25C unless otherwise specified
ALD1106
Parameter

Symbol

Gate Threshold
Voltage

VT

Offset Voltage
VGS1-VGS2

VOS

Gate Threshold
Temperature
Drift 2
On Drain
Current
Transconductance

ALD1116

Test

Min

Typ

Max

Min

Typ

Max

Unit

0.4

0.7

1.0

0.4

0.7

1.0

IDS = 1.0A VGS = VDS

10

10

mV

IDS = 10A VGS = VDS

-1.2

TCVT

-1.2

mV/C

Conditions

IDS (ON)

3.0

4.8

3.0

4.8

mA

VGS = VDS = 5V

GIS

1.0

1.8

1.0

1.8

mmho VDS = 5V IDS= 10mA

Mismatch

Gfs

0.5

0.5

Output
Conductance

GOS

200

200

mho

VDS = 5V IDS = 10mA

VDS = 0.1V VGS = 5V

VDS = 0.1V VGS = 5V

IDS = 1.0A VGS = 0V

350

Drain Source
RDS (ON)
On Resistance
Drain Source
On Resistence
Mismatch

DS (ON)

Drain Source
Breakdown
Voltage

BVDSS

500

350

0.5

500

0.5

12

12

Off Drain
Current 1

IDS (OFF)

10

400
4

10

400
4

pA
nA

VDS =12V VGS = 0V

TA = 125C

Gate Leakage
Current

IGSS

0.1

10
1

0.1

10
1

pA
nA

VDS = 0V VGS = 12V

TA = 125C

Input
Capacitance 2

CISS

pF

Notes:

1
2

Consists of junction leakage currents

Sample tested parameters

ALD1106/ALD1116

Advanced Linear Devices

TYPICAL PERFORMANCE CHARACTERISITCS

LOW VOLTAGE OUTPUT
CHARACTERISTICS

OUTPUT CHARACTERISTICS

VGS = 12V

VBS = 0V
TA = 25C

DRAIN SOURCE CURRENT

(A)

DRAIN SOURCE CURRENT

(mA)

1000
20

10V

15
8V
10

6V

4V
2V

0
2

10

500

6V
4V
2V

-500

-1000
-160

12

VGS = 12V

-80

80

160

DRAIN SOURCE VOLTAGE (V)

DRAIN SOURCE VOLTAGE (mV)

FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE

TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS

20
VBS = 0V
f = 1KHz

10

DRAIN SOURCE CURRENT

(A)

20

IDS = 10mA

TA = +25C

TA = +125C
2
1
0.5

IDS = 1mA

0.2
0

DRAIN SOURCE ON RESISTANCE

(K)

10

15
VBS = 0V

-4V

-2V

-6V

10

-8V
-10V
5

-12V

12

0.8

1.6

2.4

3.2

DRAIN SOURCE VOLTAGE (V)

GATE SOURCE VOLTAGE (V)

DRAIN SOURCE ON RESISTANCE

RDS (ON) vs. GATE SOURCE VOLTAGE

OFF DRAIN CURRENT vs.

AMBIENT TEMPERATURE

100
VDS = 0.2V
VBS = 0V
10

TA = +125C
1

TA = +25C

0.1

VGS = VDS
TA = 25C

OFF DRAIN SOURCE CURRENT

(pA)

FORWARD TRANSCONDUCTANCE
(mmho)

VBS = 0V
TA = 25C

1000
VDS = +12V
VGS = VBS = 0V
100

10

1
4

10

12

GATE SOURCE VOLTAGE (V)

ALD1106/ALD1116

4.0

-50

-25

+25

+50

+75

+100 +125

AMBIENT TEMPERATURE (C)

Advanced Linear Devices

ALD1106/ALD1116

Advanced Linear Devices