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Volume: 3 Issue: 3
ISSN: 2321-8169
1129 - 1131
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I.
INTRODUCTION
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ISSN: 2321-8169
1129 - 1131
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junction depth at the drain is more than that at the source. This
is achieved by diffusing lightly doped drain and source regions,
and then oxide spacer is formed and then heavy source and
drain regions were diffused. Then after, oxide was etched from
the part of the drain where extra dose of arsenic was to be
added to increase the drain junction depth. For that metal
(aluminium) was deposited on the entire n MOS and it was
again etched from the drain side, so that while adding more
arsenic impurities, it would not penetrate and create disturbance
SIMULATION RESULTS
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IJRITCC | March 2015, Available @ http://www.ijritcc.org
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ISSN: 2321-8169
1129 - 1131
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The asymmetric MOSFET is thus designed with no LDD at
the source side. In asymmetric MOSFET with LDD at drain
only, parasitic resistance is less and thus on current, ION is more
while that in case of asymmetric MOSFET with unequal
junction depths, the diffusion depth at drain is more than that at
source. This will keep the electric fields away from the Si-SiO2
interface and thus prevent it from hot electron effects and
impact ionization [11].
V.
Parameters
VTH (V)
@VDS= 0.05V
ION (A/m)
@VGS=1V and
VDS= 1V
IOFF (A/m)
@ VGS=0V and
VDS= 1V
SS (mV/dec)
@ VDS=1V
[2]
[3]
[4]
[5]
[6]
Jone. F. Chen, Jiang. Tao, Peng. Fang, and Chenming Hu, 0.35m
Asymmetric and Symmetric LDD Device Comparison Using a
Reliability/Speed/Power Methodology, IEEE ELECTRON DEVICE
LETTERS, vol. 19, No. 7, July 1998
[7]
Jone. F. Chen, Jiang. Tao, Peng. Fang and Chenming Hu, Performance
and reliability comparison between asymmetric and symmetric LDD
devices and logic gates, IEEE J. Solid-State Circuits, vol. 34, no.3,
pp.367371, March 1999.
[8]
[9]
CONCLUSION
ACKNOWLEDGMENT
SIMULATION RESULTS
LDD at
drain
only
Unequal Junction
Depths
0.15
0.18
1171
222
[10] Jong Pil Kim, Woo Young Choi, Jae Young Song, sang Wan Kim, Jong
Duk Lee, Byung-Gook Park, Design and fabrication of asymmetric
MOSFETs using a novell self-alignedstructure, IEEE Transactions on
Electron Devices, vol.54,No.11,Nov.2007.
[11] C. Hu, Hot Electron effects in MOSFETs, in IEDM Tech. Dig.,
pp.176-181,1983.
30
2.35
225
129
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