MGP15N40CL,

MGB15N40CL
Preferred Device

Ignition IGBT
15 Amps, 410 Volts

NChannel TO220 and D2PAK

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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for CoilOnPlug, IGBTOnCoil, or Distributorless Ignition
System Applications
High Pulsed Current Capability up to 50 A
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
Optional Gate Resistor (RG)

15 AMPERES
410 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
NChannel
C

RG

G
RGE
4

E
4
1

MAXIMUM RATINGS (55C TJ 175C unless otherwise noted)

Symbol

Value

Unit

CollectorEmitter Voltage

VCES

440

VDC

CollectorGate Voltage

VCER

440

VDC

VGE

22

VDC

IC

15
50

ADC
AAC

Rating

GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25C Pulsed
ESD (Human Body Model)
R = 1500 , C = 100 pF

ESD

ESD (Machine Model) R = 0 , C = 200 pF

ESD

800

PD

150
1.0

Watts
W/C

TJ, Tstg

55 to
175

Total Power Dissipation @ TC = 25C

Derate above 25C
Operating and Storage Temperature Range

Characteristic

Symbol

Single Pulse CollectortoEmitter Avalanche

Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A,
L = 2.0 mH, Starting TJ = 25C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A,
L = 2.0 mH, Starting TJ = 150C

EAS

Semiconductor Components Industries, LLC, 2001

August, 2001 Rev. 6

D2PAK
CASE 418B
STYLE 4

TO220AB
CASE 221A
STYLE 9
2

MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Collector

4
Collector

kV
8.0
G15N40CL
YWW
G15N40CL
YWW
1
Gate

UNCLAMPED COLLECTORTOEMITTER AVALANCHE

CHARACTERISTICS (55C TJ 175C)

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, L = 3.0 mH,
Pk IL = 25.8 A, Starting TJ = 25C

Value

Unit

3
Emitter
2
Collector

1
Gate

3
Emitter
2
Collector

G15N40CL = Device Code

Y
= Year
WW
= Work Week

mJ

ORDERING INFORMATION
300
200
EAS(R)

mJ

Device

Package

Shipping

MGP15N40CL

TO220

50 Units/Rail

MGB15N40CLT4

D2PAK

800 Tape & Reel

1000
Preferred devices are recommended choices for future use
and best overall value.

Publication Order Number:

MGP15N40CL/D

MGP15N40CL, MGB15N40CL
THERMAL CHARACTERISTICS
Characteristic

Symbol

Unit
C/W

RJC

1.0

TO220

RJA

62.5

D2PAK (Note 1)

RJA

50

TL

275

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Value

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

BVCES

IC = 2.0 mA

TJ = 40C
40 C to
150C

380

410

440

VDC

IC = 10 mA

TJ = 40C to
150C

390

420

450

TJ = 25C

1.5

20

TJ = 150C

10

40*

TJ = 40C

0.7

1.5

TJ = 25C

0.35

1.0

TJ = 150C

8.0

15*

TJ = 40C

0.05

0.5

TJ = 25C

25

33

50

TJ = 150C

25

36

50

TJ = 40C

25

30

50

OFF CHARACTERISTICS
CollectorEmitter
Collector
Emitter Clamp
Clam Voltage

Zero Gate Voltage

g Collector Current

ICES
VCE = 350 V
V,
VGE = 0 V

Reverse CollectorEmitter Leakage

g Current

IECS
VCE = 24
24 V

Reverse CollectorEmitter Clamp Voltage

g

BVCES(R)
IC = 75
75 mA
A

GateEmitter Clamp Voltage

GateEmitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor

ADC

mA

VDC

BVGES

IG = 5.0 mA

TJ = 40C to
150C

17

20

22

VDC

IGES

VGE = 10 V

TJ = 40C to
150C

384

600

1000

ADC

RG

TJ = 40C to
150C

70

RGE

TJ = 40C to
150C

10

16

26

VDC

ON CHARACTERISTICS (Note 2)
g
Gate Threshold Voltage

VGE(th)
IC = 1
1.0
0 mA,
A
VGE = VCE

Threshold Temperature Coefficient

(Negative)

1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
300 S, Duty Cycle
2%.
*Maximum Value of Characteristic across Temperature Range.

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2

TJ = 25C

1.4

1.7

2.0

TJ = 150C

0.75

1.1

1.4

TJ = 40C

1.6

1.9

2.1*

4.4

mV/C

MGP15N40CL, MGB15N40CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

TJ = 25C

1.0

1.3

1.6

VDC

TJ = 150C

0.9

1.2

1.5

TJ = 40C

1.1

1.4

1.7*

TJ = 25C

1.3

1.6

1.9

TJ = 150C

1.2

1.5

1.8

TJ = 40C

1.3

1.6

1.9*

TJ = 25C

1.6

1.95

2.25

TJ = 150C

1.7

2.0

2.3*

TJ = 40C

1.6

1.9

2.2

TJ = 25C

1.9

2.2

2.5

TJ = 150C

2.1

2.4

2.7*

TJ = 40C

1.85

2.15

2.45

TJ = 25C

2.1

2.5

2.9

TJ = 150C

2.5

2.9

3.3*

TJ = 40C

2.0

2.4

2.8

ON CHARACTERISTICS (continued) (Note 3)

CollectortoEmitter OnVoltage
g

VCE(on)
IC = 6
6.0
0A
A,
VGE = 4.0 V

IC = 10 A
A,
VGE = 4.0 V

IC = 15 A
A,
VGE = 4.0 V

IC = 20 A
A,
VGE = 4.0 V

IC = 25 A
A,
VGE = 4.0 V
CollectortoEmitter OnVoltage
Forward Transconductance

VCE(on)

IC = 10 A, VGE = 4.5 V

TJ = 150C

1.5

1.8

VDC

gfs

VCE = 5.0 V, IC = 6.0 A

TJ = 40C to
150C

8.0

15

25

Mhos

1000

1300

pF

VCC = 25 V
V, VGE = 0 V
f = 1.0 MHz

TJ = 40C
40C to
150C

100

130

5.0

8.0

DYNAMIC CHARACTERISTICS
Input Capacitance

CISS

Output Capacitance

COSS

Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS (Note 3)

(
)
TurnOff Delayy Time (Inductive)

Fall Time (Inductive)

(
)

TurnOff Delayy Time (Resistive)

(
)

td(off)

VCC = 300 V,, IC = 6.5 A

RG = 1.0
1 0 k,
k L = 300 H
H
VCC = 300 V,, IC = 6.5 A
RG = 1.0
1 0 k,
k L = 300 H
H

tf

td(off)

VCC = 300 V,, IC = 6.5 A

RG = 1.0
1 0 k,
k RL = 46 ,

Fall Time ((Resistive))

tf

VCC = 300 V,, IC = 6.5 A

RG = 1.0
1 0 k,
k RL = 46 ,

TurnOn Delay
y Time

td(on)

VCC = 10 V,, IC = 6.5 A

RG = 1.0
1 0 k,
k RL = 1
1.5
5

Rise Time

VCC = 10 V,, IC = 6.5 A

RG = 1.0
1 0 k,
k RL = 1
1.5
5

tr

3. Pulse Test: Pulse Width
300 S, Duty Cycle
2%.

*Maximum Value of Characteristic across Temperature Range.

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3

TJ = 25C

4.0

10

TJ = 150C

4.5

10

TJ = 25C

7.0

10

TJ = 150C

10

15*

TJ = 25C

4.0

10

TJ = 150C

4.5

10

TJ = 25C

13

20

TJ = 150C

16

20

TJ = 25C

1.0

1.5

TJ = 150C

1.0

1.5

TJ = 25C

4.5

6.0

TJ = 150C

5.0

6.0

Sec

Sec

Sec

MGP15N40CL, MGB15N40CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10.0 V

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

60
VGE = 4.5 V

50
VGE = 5.0 V
40

VGE = 4.0 V

30

TJ = 25C

VGE = 3.5 V

20
VGE = 3.0 V
10
VGE = 2.5 V
0
1

VGE = 5.0 V
40
VGE = 4.0 V
30

TJ = 150C

VGE = 3.5 V

20

VGE = 3.0 V

10

VGE = 2.5 V

Figure 1. Output Characteristics

Figure 2. Output Characteristics

VCE = 10 V

20
15
TJ = 150C
10
TJ = 25C
TJ = 40C

5
0
0

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

25

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

30

0.5

1.5

2.5

3.5

4.5

VGE, GATE TO EMITTER VOLTAGE (VOLTS)

4.0
3.5

VGE = 5.0 V

3.0

IC = 25 A

IC = 20 A

2.5
2.0
1.5
1.0

IC = 15 A

0.5
0.0
50

IC = 5 A

IC = 10 A
25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Transfer Characteristics

Figure 4. CollectortoEmitter Saturation

Voltage vs. Junction Temperature

10000

2.5
THRESHOLD VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

VGE = 4.5 V

0
0

IC, COLLECTOR CURRENT (AMPS)

VGE = 10.0 V
50

Ciss

1000

Coss

100

10

Crss

1
0

20

40

60

80

100 120

Mean + 4
2.0

1.5
Mean 4
1.0

0.5
0.0
50

140 160 180 200

IC = 1 mA

Mean

25

25

50

75

100

125

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

TEMPERATURE (C)

Figure 5. Capacitance Variation

Figure 6. Threshold Voltage vs. Temperature

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4

150

MGP15N40CL, MGB15N40CL
30
VCC = 50 V
VGE = 5.0 V
RG = 1000

25

IL, LATCH CURRENT (AMPS)

IL, LATCH CURRENT (AMPS)

30

20
T = 25C
15
10
T = 150C
5
0
0

15
L = 3.0 mH
10
L = 6.0 mH
5

25

25

50

75

100

125

150

INDUCTOR (mH)

TEMPERATURE (C)

Figure 7. Minimum Open Secondary Latch

Current vs. Inductor

Figure 8. Minimum Open Secondary Latch

Current vs. Temperature

175

30
VCC = 50 V
VGE = 5.0 V
RG = 1000

T = 25C

25

IL, LATCH CURRENT (AMPS)

IL, LATCH CURRENT (AMPS)

L = 2.0 mH

20

0
50

10

30

20
15

T = 150C

10
5
0
0

L = 3.0 mH
15
L = 6.0 mH
10
5

25

25

50

75

100

125

150

TEMPERATURE (C)

Figure 9. Typical Open Secondary Latch

Current vs. Inductor

Figure 10. Typical Open Secondary Latch

Current vs. Temperature

175

14
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300 H

tf

12
tf

td(off)

6
4
2
0
50

20

INDUCTOR (mH)

SWITCHING TIME (S)

10

VCC = 50 V
VGE = 5.0 V
RG = 1000

L = 2.0 mH

25

0
50

10

12

SWITCHING TIME (S)

VCC = 50 V
VGE = 5.0 V
RG = 1000

25

10

VCC = 300 V
VGE = 5.0 V
RG = 1000
TJ = 150C
L = 300 H

8
6

td(off)

4
2
0

25

25

50

75

100

125

150

10

12

14

TC, CASE TEMPERATURE (C)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Switching Speed vs. Case

Temperature

Figure 12. Switching Speed vs. Collector

Current

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5

16

MGP15N40CL, MGB15N40CL
14

14
VCC = 300 V
VGE = 5.0 V
TJ = 25C
IC = 10 A
L = 300 H

10
8

12
SWITCHING TIME (S)

SWITCHING TIME (S)

12

tf

6
td(off)

tf

10
VCC = 300 V
VGE = 5.0 V
TJ = 150C
IC = 10 A
L = 300 H

8
6

td(off)

4
2

2
0
250

500

750

0
250

1000

500

750

1000

RG, EXTERNAL GATE RESISTANCE ()

RG, EXTERNAL GATE RESISTANCE ()

Figure 13. Switching Speed vs. External Gate

Resistance

Figure 14. Switching Speed vs. External Gate

Resistance

R(t), TRANSIENT THERMAL RESISTANCE (C/Watt)

10

Duty Cycle = 0.5

0.2
0.1
0.05

0.02
0.1

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN
READ TIME AT T1

P(pk)

0.01

t1

Single Pulse

t2
DUTY CYCLE, D = t1/t2

0.01
0.00001

0.0001

0.001

0.01

0.1

TJ(pk) TA = P(pk) RJA(t)

RJC R(t) for t 0.2 s

t,TIME (S)

Figure 15. Transient Thermal Resistance

(Nonnormalized JunctiontoAmbient mounted on
fixture in Figure 16)

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6

10

100

1000

MGP15N40CL, MGB15N40CL

1.5

4
4

0.125
4

Figure 16. Test Fixture for Transient Thermal Curve

(48 square inches of 1/8
thick aluminum)

100
COLLECTOR CURRENT (AMPS)

COLLECTOR CURRENT (AMPS)

100
DC
100 s

10

1 ms
10 ms

1
100 ms
0.1

0.01
1

10

100

DC
10
100 s
1

1 ms
10 ms
100 ms

0.1

0.01
1

1000

10

100

1000

COLLECTOREMITTER VOLTAGE (VOLTS)

COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 17. Single Pulse Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 25C)

Figure 18. Single Pulse Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 125C)

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7

MGP15N40CL, MGB15N40CL
100
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10

DC
10

t1 = 3 ms, D = 0.30
1
P(pk)
0.1

t1
t2
DUTY CYCLE, D = t1/t2

0.01
1

10

100

COLLECTOR CURRENT (AMPS)

COLLECTOR CURRENT (AMPS)

100

t1 = 2 ms, D = 0.10

10

t1 = 3 ms, D = 0.30
1
P(pk)
t1

0.1

t2
DUTY CYCLE, D = t1/t2

0.01
1

1000

t1 = 1 ms, D = 0.05

DC

10

100

1000

COLLECTOREMITTER VOLTAGE (VOLTS)

COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 19. Pulse Train Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 25C)

Figure 20. Pulse Train Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 125C)

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8

MGP15N40CL, MGB15N40CL
PACKAGE DIMENSIONS
TO220 THREELEAD
TO220AB
CASE 221A09
ISSUE AA

SEATING
PLANE

T
B

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

STYLE 9:
PIN 1. GATE
2. COLLECTOR
EMITTER

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9

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

MGP15N40CL, MGB15N40CL
PACKAGE DIMENSIONS
D2PAK
CASE 418B03
ISSUE D
C
E
V

B
4

A
1

T
SEATING
PLANE

K
J

G
D 3 PL
0.13 (0.005)

H
M

T B

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
J
K
S
V

INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055

STYLE 4:
PIN 1.
2.
3.
4.

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10

GATE
COLLECTOR
EMITTER
COLLECTOR

MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40

MGP15N40CL, MGB15N40CL

Notes

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11

MGP15N40CL, MGB15N40CL

ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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12

MGP15N40CL/D