RDN100N20

Transistors

10V Drive Nch MOS FET

RDN100N20
zExternal dimensions (Unit : mm)

zStructure
Silicon N-channel
MOS FET

TO-220FN
4.5
3.2

2.8

1.2

1.3

14.0

5.0

8.0

15.0

zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.

12.0

10.0

0.8

(1)Gate
2.54

(2)Drain

2.54

0.75

2.6

(1) (2) (3)

(3)Source

zApplication
Switching

zPackaging specifications

zEquivalent circuit

Package
Type

Bulk

Drain

Code

500

Basic ordering unit (pieces)

RDN100N20

Gate

zAbsolute maximum ratings (Ta=25C)

Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed

Drain Current
Reverse Drain
Current
Source Current
(Body Diode)

Avalanche Current
Avalanche Energy
Total Power Dissipation (TC=25C)
Channel Temperature
Storage Temperature

Symbol
VDSS
VGSS
ID
IDP 1
IDR
IDRP 1
IS
ISP 1
IAS 2
EAS 2
PD
Tch
Tstg

Limits
200
30
10
40
10
40
10
40
10
120
35
150
55 to +150

Unit
V
V
A
A
A
A
A
A

1 ESD Protection diode

2 Body Diode

Source

A protection diode is included between the gate and

the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

A
mJ
W
C
C

1 Pw 10s, Duty cycle 1%

2 L 1.8mH, VDD=50V, RG=25, 1Pulse, Tch=25C

zThermal resistance
Parameter
Channel to case
Channel to ambient

Symbol

Limits

Unit

Rth(ch-c)
Rth(ch-a)

3.57
62.5

C/W
C/W

Rev.A

1/4

RDN100N20
Transistors
zElectrical characteristics (Ta=25C)
Symbol

Min.

Typ.

Max.

Unit

IGSS

10

Drain-Source Breakdown Voltage

V(BR) DSS

200

ID=250A, VGS=0V

Zero Gate Voltage Drain Current

IDSS

25

VDS=200V, VGS=0V

Parameter
Gate-Source Leakage

Conditions
VGS=30V, VDS=0V

Gate Threshold Voltage

VGS (th)

2.0

4.0

VDS=10V, ID=1mA

Static Drain-Source On-State

Resistance

RDS (on)

0.27

0.36

ID=5A, VGS=10V

Forward Transfer Admittance

Yfs

VDS=10V, ID=5A

2.3

3.8

Input Capacitance

Ciss

543

pF

VDS=10V

Output Capacitance

Coss

193

pF

VGS=0V

Reverse Transfer Capacitance

Crss

64

pF

f=1MHz

Turn-On Delay Time

td (on)

13

ns

ID=5A, VDD 100V

tr

29

ns

VGS=10V

td (off)

38

ns

RL=20

tf

26

ns

RG=10

Qg
Qgs

15.0

30.0

nC

VDD=100V

5.0

nC

VGS=10V

Qgd

5.2

nC

ID=10A

Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulsed

zBody diode characteristics (Source-drain) (Ta=25C)

Parameter

Forward voltage
Reverse recovery time
Reverse recovery charge

Symbol
VSD

trr
Qrr

Min.

Typ.

133
0.54

Max.
2.0

Unit
V
ns
C

Conditions
IS= 5A, VGS=0V
IDR= 10A, VGS=0V
di/dt= 100A / s

Pulsed

Rev.A

2/4

RDN100N20
Transistors
zElectrical characteristic curves

14

7V

12
10
8

6V

6
4

5V

2
1

10

100

1000

VGS=4V

DRAIN-SOURCE VOLTAGE : VDS (V)

4.8
4
3.2
2.4
1.6
0.8
0
50 25

25

50

75

100 125 150

0.4
ID=10A

0.3

4A

0.2

VGS=10V
Pulsed

0.1
0.01

0.1

10

20

25

50

75

100 125 150

2
1
0.5

CHANNEL TEMPERATURE : Tch (C)

Fig.7 Static Drain-Source

On-State Resistance vs.
Channel Temperature

0.2
0.05 0.1 0.2

0.5

10

Ta=25C
Pulsed

0.75

0.5
ID=10A

0.25

5A

10

15

20

25

30

Fig.6 Static Drain-Source

On-State Resistance vs.
Gate-Source Voltage

0.1
0
50 25

GATE-SOURCE VOLTAGE : VGS (V)

Ta= 25C
Ta=25C
Ta=75C
Ta=125C

100

VDS=10V
Pulsed

10

Fig.3 Typical Transfer

Characteristics

Fig.5 Static Drain-Source

On-State Resistance
vs. Drain Current

FORWARD TRANSFER
ADMITTANCE :Yfs(S)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) ()

0.5

GATE-SOURCE VOLTAGE : VGS (V)

DRAIN CURRENT : ID (A)

VGS=10V
Pulsed

0.6

0.1

0.01

Ta= 25C
Ta=25C
Ta=75C
Ta=125C

Fig.4 Gate Threshold Voltage

vs. Channel Temperature

0.7

10 12 14 16 18 20

CHANNEL TEMPERATURE : Tch (C)

0.8

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

Fig.2 Typical Output Characteristics

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) ()

GATE THRESHOLD VOLTAGE : VGS (th) (V)

VDS=10V
ID=1mA

5.6

10

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Maximun Safe

Operating Area

6.4

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) ()

0.1

DRAIN CURRENT : ID (A)

10V
9V

16

VDS=10V
Pulsed

8V

10

20

DRAIN CURRENT : ID (A)

Fig.8 Forward Transfer Admittance

vs. Drain Current

100

REVERSE DRAIN CURRENT : IDR (A)

s
0

100

Ta=25C
18 Pulsed

DRAIN CURRENT : ID (A)

Operation in this
area is limited
by Ros(on)

10

10

20

TC=25C
Single Pulse

S
S
m
n
1m
0
tio
=1
ra
Pw
pe
O
DC

DRAIN CURRENT : ID (A)

100

VGS=0V
Pulsed

10

Ta= 25C
Ta=25C
Ta=75C
Ta=125C

0.1

0.01

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.9 Reverse Drain Current vs.

Source-Drain Voltage

Rev.A

3/4

RDN100N20
Transistors

Ciss

100

Coss
Crss

10

1
0.1

10

100

20
VDS

160
140

VDD=40V
VDD=100V
VDD=160V

120
100

VDD=40V
VDD=100V
VDD=160V

40
20
0

tf

100

td (off)

tr
td (on)
10
0.1

10

100

DRAIN CURRENT : ID (A)

Fig.13 Switching Characteristcs

10

0
20

15

1000

Ta=25C
di / dt=100A / s
VGS=0V
Pulsed

100

10
0.1

10

100

REVERSE DRAIN CURRENT : IDR (A)

TOTAL GATE CHARGE : Qg (nC)

Fig.11 Dynamic Input Characteristics

Fig.12 Reverse Recovery Time

vs. Reverse Drain Current

10

NORMALIZED TRANSIENT
THERMAL RESISTANCE : r (t)

SWITCHING TIME : t (ns)

Ta=25C
VDD=100V
VGS=10V
RQ=10
Pulsed

10

60

DRAIN SOURCE VOLTAGE : VDS (V)

1000

VGS

80

1000

Fig.10 Typical Capacitance vs.

Drain-Source Voltage

Ta=25C
ID=8.0A
Pulsed

180

REVERSE RECOVERY TIME : trr (ns)

1000

200

GATE-SOURCE VOLTAGE : VGS (V)

f=1MHz
VGS=0V
Ta=25C
Pulsed

DRAIN-SOURCE VOLTAGE : IDS (V)

CAPACITANCE : C (pF)

10000

1 D=1
0.5
0.2
0.1

0.1 0.05
0.02

Tc=25C
th(ch-c)(t)=r(t) =th(ch-c)
th(ch-c)=3.57C / W

0.01 0.01
Single pulse

0.001
10

PW
T

100

1m

10m

D= PW
T

100m

10

PULSE WIDTH : PW (S)

Fig.14 Normalized Transient

Thermal Resistance vs.
Pulse Width

Rev.A

4/4

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1