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SolidStateDevices&Circuits
4.MOSTransistors
Jose E. Schutt-Aine
Electrical & Computer Engineering
University of Illinois
jschutt@emlab.uiuc.edu
JoseE.SchuttAine ECE442
NMOS Transistor
NMOS Transistor
N-Channel MOSFET
Built on p-type substrate
MOS devices are smaller than BJTs
MOS devices consume less power than BJTs
JoseE.SchuttAine ECE442
Top View
Cross Section
JoseE.SchuttAine ECE442
Active
JoseE.SchuttAine ECE442
Saturation
VGT > VT
VDS VGS VT
4
As VG increases
The width of the depletion region and the potential at the
oxide-silicon interface also increase
When the interface potential reaches a sufficiently
positive value, electrons flow in the channel. The
transistor is turned on
As VG rises further
The charge in the depletion region remains relatively
constant
The channel current continues to increase
JoseE.SchuttAine ECE442
ID =
W
Cox (VGS VT )VDS
L
VDS (VGS VT )
Cox =
ox
tox
3.9 o
=
tox
JoseE.SchuttAine ECE442
rds =
1
W
nCox (VGS VT )
L
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VGS > VT
VDS < (VGS VT )
W
1 2
I D = nCox (VGS VT )VDS VDS
2
L
JoseE.SchuttAine ECE442
VGS > VT
VDS > (VGS VT )
(saturation)
W
2
I D = nCox
(VGS VT )
2L
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Saturation
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Example
An MOS process technology has Lmin= 0.4
m, tox= 8 nm, = 450 cm2/V.s, VT = 0.7V
(a) Find Cox and kn= nCox
(b) W/L = 8 m/0.8m. Calculate VGS, VDSmin for
operation in saturation with ID= 100 A
(c) Find VGS for the device in (b) to operate as
a 1 k resistor for small vDS
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Example - Solution
Cox =
ox
tox
3.45 1011
3
2
2
F
m
fF
m
=
=
4.32
10
/
=
4.32
/
8 109
Cox = 4.32 fF / m 2
Example (cont)
Triode region with vDS very small
vDS
rDS =
iD
=
small vDS
1
'W
kn L (VGS VT )
1
100 =
194 106 10 (VGS 0.7 )
VGS = 1.22 V
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Gate Capacitance
VGT < 0
Capacitance
Depends on bias
Fringing fields are present
Account for overlap C
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Capacitance
Gate Capacitance
CG determines the amount of charge to switch gate
Several distributed components
Large discontinuity as device turns on
At saturation capacitance is entirely between gate
and source
VDS
Define X =
VGS VT
2
1 X
Cgs = C gso + WLCox 1
3
2 X
Cgd
1 2
2
= Cgdo + WLCox 1
3
2 X
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MOS Capacitances
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Problem
A MOSFET has VT = 1 V with measure data:
Find
VGS(V)
2
2
VDS(V)
1
8
ID(A)
80
91
(a ) VGS > VT
R=
1 + VDS 1 91
=
= 1.1375
1 + VDS 2 80
1 + VDS 2 = R + RVDS 1
(VDS 2 RVDS 1 ) = R 1
=
R 1
1.1375 1
=
= 0.0196 V 1
VDS 2 RVDS 1
8 1
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Body Effect
The body effect
VT varies with bias between source and body
Leads to modulation of VT
Potential on substrate affects threshold voltage
1/ 2
kT
F =
q
Na
ln n
i
2qN a s )
(
=
Cox
1/ 2
1/ 2
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Channel-Length Modulation
With depletion layer widening, the channel length is in effect reduced from
L to L-L Channel-length modulation
This leads to the following I-V relationship
1 'W
2
iD = kn ( vGS VT ) (1 + vDS )
2 L
Where is a process technology parameter
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Channel-Length Modulation
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NMOS IV Curves
NMOS
700
VGS=1.0
VGS=1.5
VGS=2.0
VGS=2.5
600
500
IDS
400
300
200
100
0
0
0.5
1.5
2.5
Vds
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PMOS Transistor
PMOS
0
-100
VGS=-1.0
-200
-300
-400
-500
VGS=-1.0
VGS=-1.5
VGS=-2.0
VGS=-2.5
-600
-700
-2.5
-2
-1.5
-1
-0.5
Vds
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Complementary MOS
CMOS Characteristics
Combine nMOS and pMOS transistors
pMOS size is larger for electrical symmetry
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CMOS
Advantages
Virtually, no DC power consumed
No DC path between power and ground
Excellent noise margins (VOL=0, VOH=VDD)
Inverter has sharp transfer curve
Drawbacks
Requires more transistors
Process is more complicated
pMOS size larger to achieve electrical symmetry
Latch up
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MOS Parasitics
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MOSFET Switch
NMOS
PMOS
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CMOS Switch
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30
31
CMOS Inverter
rdsn =
1
W
k N' (VDD VT )
L n
rdsp =
1
W
k P' (VDD VT )
L p
Short switching
transient current
low power
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BJT vs MOS
Matching
VBEon for bipolar is determined by bandgap
VT on MOS is determined by tox and implant
BJTs have superior current drive
BJTs switch faster than MOS
BJTs dissipate more power
BJTs have lower yield
BJTs are more costly
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CMOS vs Bipolar
Current
Collector current inversely proportional to Wb
Drain current inversely proportional to L
Topology
Base width is vertical defined by lithography
Channel length is horizontal defined by diffusion
Behavior
Bipolar current is exponential
MOS current obeys square law
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