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60

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100

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800

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600

800

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40

60

80

100

120

140

160
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140

140

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15V
13V
11V
9V
7V

120
100

100
80

60

60

40

40

20
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120

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20
V

ICpuls = 75 A

18

800V

14

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f = 1 MHz

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600

16

M100G125.XLS-14

100

10

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10
8

4
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Coes

6
C

2
0

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0,1
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200

400

600

nC

800

Fig. 13 Typ. gate charge characteristic

10

20

30

Fig. 14 Typ. capacitances vs.VCE

M100G125 - 15

1000

VCE

Tj = 125 C
VCE = 600 V
VGE = 15 V
RGon = 12
RGoff = 12
induct. load

tdoff
ns

M100G125 - 16

10000

Tj = 125 C
VCE = 600 V
VGE = 15 V
IC = 75 A
induct. load

tdoff

ns

1000
tdon

tdon
100

100

tr

tr

tf

tf
10

10
0

IC

20

40

60

80

100

120
A

Fig. 15 Typ. switching times vs. IC

RG

20

40

60

Fig. 16 Typ. switching times vs. gate resistor RG

M100G125 - 18

M100G125.XLS-17

100

80

A
80

RG=
6

12

Tj=25C, typ.

Tj=125C, max.

60

VCC = 600 V
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mJ

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20

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40

60

2
20

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IF

50

100

150

Fig. 18 Diode turn-off energy dissipation per pulse

 

by SEMIKRON

SKM 100 GB 125 DN

M100G125 - 19

M100G125 - 20

1
K/W

K/W
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0,1

0,01

0,01

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0,10
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0,02
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0,001
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ZthJC

single pulse

0,0001
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D=0,5
0,2
0,1
0,05
0,02
0,01

0,001

0,01

0,1

0,0001
0,00001

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ZthJC = f (tp); D = tp / tc = tp f

A
RG=
6

0,0001

0,001

0,01

0,1

Fig. 20 Transient thermal impedance of

inverse CAL diodes Zthjc = f (tp); D = tp / tc = tp f
M100G125 - 23

M100G125 - 22

120

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120

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80

80
9
9
12

12

40

40

20

20

60

60

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IRR
0

0
0

IF

40

80

A 120

Fig. 22 Typ. CAL diode peak reverse recovery

current IRR = f (IF; RG)

A/us 5000

2500

diF/dt

Fig. 23 Typ. CAL diode peak reverse recovery

current IRR = f (di/dt)
M100G125 - 24

20
uC
15
12

RG= 6 I =
F
100 A

20

75 A

60

10

- 
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38 A
19 A

5
Qrr
0
0

diF/dt

2500

A/us

5000

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by SEMIKRON

010924

B 6 41




SEMITRANS 2N (low inductance)
Case D 93
UL Recognized
File no. E 63 532




Dimensions in mm
Case outline and circuit diagram

Mechanical Data
Symbol Conditions
M1
M2
a
w

to heatsink, SI Units
to heatsink, US Units
for terminals, SI Units
for terminals, US Units

Values
(M6)
(M5)

Units

min.

typ.

max.

3
27
2,5
22

5
44
5
44
5x9,81
160

Nm
lb.in.
Nm
lb.in.
m/s2
g

This is an electrostatic discharge

sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Eight devices are supplied in one
SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for
10 SEMITRANS 2)
Larger packing units of 20 and 42
pieces are used if suitable

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