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Multipaction, Corona and Passive

Intermodulation in passive microwave


components

Agenda
Mutlipaction
Corona (critical pressure)
Passive Intermodulation

Multipaction

OUTLINE

What is multipaction?
What are requirements for multipaction?
Some underlying physics
Description of multipaction curves
General procedure for analysis
Examples
Preventions
Design Limitations and effects
Testing and detection
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Multipaction

Multipaction-overview

Multipaction occurs in passive microwave


components when free electrons are
propelled across a gap by the microwave
electric field and the transit time of free
electrons crossing the gap coincides with the
half period (or odd number of) of the
operating frequency
Electron strikes the surface and releases
secondary electrons
The newly released electrons are propelled
back across the gap by the microwave electric
field which has changed polarity
When the number of secondary electrons
generated (and making it across the gap)
exceeds the number of primary electrons
striking the surface, an electron cloud is
formed, resulting in arcing which is called
multipaction

Time: (0 to )

Time: ( to 2)

e-

E
Secondary
Electrons

E = E0 sin (wt)

Multipaction

Requirements for Multipaction


Surfaces with secondary electron emission coefficients greater
than 1.0
Vacuum
Appropriate combination of gap dimension, frequency, and
power to produce a resonant condition
Sufficient gap to allow electrons to gain energy crossing the gap
Appropriate geometries
Initial electrons to start the process

Time for the discharge to build up

Multipaction

Time to Initiate Multipaction


Multipaction takes time to develop
4ns
- at 11.1 GHZ measured
20 gap crossings - computer simulation
15 cycles
- suggested by some space agencies
Fifteen cycles criterion lacked general acceptance
Twenty gap crossing is accepted as a standard

Multipaction

Electron Tracking
Multipaction has three stages
Drift
Due to initial velocity
Oscillation due to field superimposed on motion
Terminated by collision with wall (low energy, low yield)
Synchronization
Electrons travel out of step with applied field
Some collisions productive; others not
Build up
Electrons in sync with applied field
All collisions somewhat productive

Multipaction

Electron Emission - Yield

Low energy electrons


absorbed
High energy electrons
penetrate too deep yield
low
Yield greater than one
required for multipaction

Multipaction

Multipaction Mode

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Multipaction

Multipaction Modes
(Hatch and Williams curves)

Break down is a function of


frequency-gap product
Multipaction is cut-off below a
certain f-d product
Electrons may take an odd
multiple number of half-cycles
to cross the gap
Number of half cycles is
multipaction mode number
Electrons in higher order modes
take longer to cross the gap.

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Multipaction

Multipaction Modes
(Susceptibility curves)

Multipaction curves are a


function of materials
Curves are limited to four
materials
Multipaction does not happen
below curve

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Multipaction

Multipaction Modes
Asymmetric modes
3/2 cycle transit one way
cycle transit other direction
other way
Net energy gain each direction
Integral number of cycles for
each round trip
Hybrid modes
Alternating between modes
every round trip
Eg. 3 cycles, 4cycles, 3
cycles, 4cycles, 3 cycles,
4cycles
Transition between two modes

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Multipaction

Gaps in the Microwave structures

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Multipaction

General Analysis Procedure


1.
2.
3.
4.
5.
6.
7.

Determine critical gaps


Make assumptions about surface materials if necessary
Calculate breakdown voltage from the curves
Relate voltage in breakdown region to power level
Calculate breakdown power
Calculate breakdown margin from the applied power
Consider geometry effects

Note: This is the worst case analysis procedure. Alternatively the


realistic analysis can be conducted by adding voltage probes in
the critical gaps in the EM model(CST, HFSS) to calculate the
realistic voltage across the gaps and then compare it to the
breakdown voltage from the curves.
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Multipaction

Example #1 Transition
Two areas for concern are:

The end of the probe to the waveguide


wall (Vg)
The coaxial structure where the probe
enters the waveguide (Vc)

Vc

Vw

Vg

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Multipaction
Transition
Coaxial Structure
Hole diameter is .162 in. Centre conductor is .050 in.
gap = .056 in = 1.422 mm
@f = 10.95 GHz, fd = 15.57 GHz mm
For Ag/Au surface, breakdown voltage V = 981 V(from
multipaction curves)
Pb = V2/2ZC = 9.62 kW
(ZC = 50 )

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Multipaction

Transition
Probe Structure
Typical gap is .140 in.
gap = .140 in = 3.55 mm

@f = 10.95 GHz, fd = 38.94 GHz mm


For Ag/Au surface, breakdown voltage
V= 3500V(from multipaction curves)
Pb = V2/2ZW = 11.3 kW

(ZW = 543 )
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Multipaction

Preventive Measures
Decrease the gap size below multipaction cutoff or increase in
the gap sizes higher than operating power/voltage.

Dielectric filling of the gaps

Pressurization of the microwave components

Avoid sharp edges in the microwave assembly

Changing surface conditions ( for example anodyne Plating)

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Multipaction

Design limitations due to multipaction


Limits on F*d implies limitations on the dimensions of the
assembly
Dielectric filling can cause change in S parameters and thereby a
change may be required in the dimensions of the assembly in order
to achieve the S-parameter spec.
Pressurization can increase the risk of corona and PIM
Change in surface conditions will imply change in S-parameters

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Multipaction

Direct consequences

Generation of noise, harmonics and reflected RF power


Phase changes in the system
RF signal absorption and reflection
Irreversible damage to the RF component and amplifiers
powering up the unit
RF components detuning
Oxidization and contamination of the RF component

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Multipaction

Detection methods

Local:
Electron probes
fibre optic
Mass spectrometer

Global :
nulling
Harmonics

Near band noise

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Multipaction

Multipaction Test setup


SPECTRUM
ANALYZER
3rd
Harmonic

LNA

SPECTRUM
ANALYZER

LNA

W/G Taper

Phased
Adjusted
W/G Short

BPF 2

Near Band
Noise

VACUUM CHAMBER

Synthesized
Source
HPA

LPF

BPF1

Internally
PM 3
PM 1

PM2
PM 5

NOTE: Single amplifier configuration


could be any acceptable combination
of amplifiers to acheive full power

PM1:
PM2:
PM3:
PM4:
PM5:

Main Line forward power (Avg)


Main Line Reverse Power (Avg)
Ring Forward Power (Pk)
Ring Through Power (Pk)
Ring Reverse Power (Avg)

PM 4
Temperature
Monitoring
System (T Type
Thermocouple)

DUT

Elect
ron
Prob
e

Pico
Amp
Meter

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Multipaction

Space environment: Electron seeding

Initial free electrons required to start multipaction

The radioactive environment will depend on the location


of the component in the satellite and its orbit.

Densities of 107-108 electron/cm3 with energies of 1 Mev


and higher is considered the case for many system
environments.

An example of an Electron source Cs-137 used in Multipaction


testing
10 Cu

High energy particles 1.176 Mev.


Half-live 30.07 years, after 10 years 0.794 of initial value
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Multipaction
Multipaction detection plots

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Multipaction
RF breakdown phenomena
Takes place under vacuum conditions only.
Requires the presence of high electrical fields between surfaces
Free electrons accelerated by RF voltage to create an electron resonance growth.
The breakdown level is affected by:

- internal geometry (gap size)


Time: (0 to )

- operating frequency
- applied RF voltage
- surface conditions

Results of the RF breakdown:

eSecondary
Electrons

Time: ( to 2)

- disruption or loss of signal


- permanent damage to component

E = E0 sin (wt)

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Multipaction
Prediction:
- breakdown level is a function of fxd
- typical calculation is based on Hatch & Williams curve

Detection:
- near band noise floor

- harmonic detection
- forward/reverse power(nuling)
- electron probe detector

Prevention:
- control of frequency-gap product
- avoid sharp edges
- dielectric filling
- pressurization

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Corona

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Corona

Caused by the electric field next to an object exceeding the


breakdown value for air (medium)
The kinetic energy of the electrons exceed the ionization energy
of the molecules of the medium.
Breakdown power depends on the nature and density of the
gas(medium).
Breakdown power is a function of pressure and frequency.
Typically critical pressure is found to be equal to the operating
frequency in Torr
Gap size, sharp edges
Testing for corona is similar to multipaction as both cause sparameter performance changes and near band and harmonic
noise
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Corona

Paschens Law

The voltage at which a spark


occurs (known as breakdown
voltage) is dependent on the
product of air pressure (P) and
the separation between the
electrodes (d).
Microwave frequencies alter
characteristics

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Corona

Critical pressure-Analysis

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Corona

Preventive Measures

Reduce Gap voltage

Dielectric filling of the gaps

Avoid sharp edges

Pressurization

Cavity/Resonator

Lid

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Passive Intermodulation
PIM
(A multidisciplinary problem)

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Passive Intermodulation

Outline

Introduction
General review
PIM Sources
Design examples
Waveguide
Coaxial

Design Rules / Aspects to consider


PIM testing

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Passive Intermodulation

Introduction

Passive Intermodulation (PIM ) is a non linear behaviour that generates noise


at frequencies which are linear combinations of the input carriers.
The amplitude of the signal created needs to be typically 170 dBc below the
transmit signals ( ~1x10-9 mW) . If higher, it may interfere with the receive signal.
Good performance needs to be proven over the satellite operating temperature
in space.
PIM is not only generated within the microwave components. It can also be
created at other locations of the satellite that may be exposed to electrical
currents e.g. reflectors, thermal banquets. Spacecraft level testing becomes very
complex.
Payloads where the antenna is used to transmit and receive require especial
attention to passive intermodulation products generation
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Passive Intermodulation

General Review
PIM is generated by the device non-linear relationship between
current and voltage

This non-linearity excites the harmonics of the input signals (2f1, 2f2,
3f1,) as well as the intermodulation products (f1+f2, 2f1+f2,)
The issue is typically associated with:
- High transmit power level
- High receive sensitivity
- maintained response over thermals is required
PIM level difficult to analyze or predict
Carriers

Example:

PIM (dB)
PIM Products

fc1=3705 MHz
COMUX

fc2=4195 MHz

Tx

Tx Band=3700 4200 MHz


Rx Band=5900 6400 MHz

Rx
F1+F2

3rd

5th

7th

9th

11th

Freq (MHz)

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Passive Intermodulation

Xpim: product frequency calculation


Fpim= n x F1 + m x F2
m, n are integers
PIM order N= |m|+|n|

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Passive Intermodulation

PIM sources (metal-metal contact)


Inadequate Metal to metal contact pressure.
This is when problems related to:
Surface flatness
Surface roughness (contact occurs only at the surface peaks)
Alignment between parts
Hardware torque sequence. May create high local stresses
Use of materials with different CTE(Coefficient of Thermal Expansion). Issue over thermals
Machining defects nicks, scratches, tooling marks
Mechanical design. Part plastic deformation is reached when bolts are at full torque

Cu shim 0.003-0.005"

Filter lid

filter boby halve

waveguide
A dimension (e.g. 0.75")

Cavity wall
x microinches (e.g. 8, 16, 32)
filter boby halve

max
average

min

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Passive Intermodulation

PIM sources (Nonlinear materials)


Nonlinear materials.
Invar and Nickel are the most typical
examples.
Plating process and thickness specified
need to ensure that currents induced by
EM Waves propagate through silver only,
and not the base material
> 5 skin depths (s)
Steel (fasteners, RF connectors)

c
2

Band

Approx. Freq.
Range (GHz)

Skin Depth s
(Thou)

UHF

0.2 - 0.8

0.178 - 0.0891

1.5 1.6

0.065 0.063

2.0 2.7

0.056 0.048

3.7 7.25

0.041 0.029

7.25 8.4

0.029 0.0275

Ku

10.7 18

0.024 0.018

Ka

18 31

0.024 0.014

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0.012

c = speed of light ~ 3 x 108 (m/s)


= permeability of free space = 4 x 10-7 (H/m)
= 2f (Hz)
= conductivity of Ag = 6.173 x 107 (S/m)

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Passive Intermodulation

PIM sources

Tuning screws
They are located at high fields and currents regions to allow tunability, contact issue remain between
screw and filter body
Poor solder joints
If some flux residue (non linear material) is left after cleaning operation
Solder joints under high stress
Joint may crack creating a contact problem
Contamination
Minute metal particle from helical coils, bolts
Any other material
Micro cracks
When semi rigid cables are bent, it may originate a crack on the internal or external conductors

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Passive Intermodulation

PIM signal amplitude calculation

The lower the order of the product the stronger is expected its presence.
General rule is that the amplitude of the PIM signal is proportional to the amplitude
of each carrier.

It can be applied when the source is non linear materials


It is in general wrong when the PIM source is metal to metal contacts (due to
mechanical stresses over thermals)
Not valid at very high powers, PIM generation tend to saturate

-138
-145+log10(P**3)

PIM & log (PN)


P = input power
N= order (e.g. 3)

-138.5

-139

-139.5

PIM (dBm)

-140

-140.5

Equal power applied


at F1 and F2

-141

-141.5

-142
20

40

60

80

100

120

140

P(W)
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Passive Intermodulation

Design examples (w/g components)


A flange connection is the simplest PIM source in a
system. If not taken into consideration it can be a
significant source of PIM.
A good performance depends on an evenly distributed high
contact pressure maintained across the thermal profile.
This can be achieved with high pressure grooves and specific
design on flange hole pattern.
Soft free oxygen Cu shims (0.003-0.005 thick)

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Passive Intermodulation

Design examples (w/g components to reject PIM)


4 Ch OMUX with an output cover filter. Channel filters are TE112 and
cover filter is 10-2 TE101 rectangular cavity that provides at least 45 dB
isolation.
The passive Intermodulation generated mainly at manifold and
interconnecting waveguide flanges is rejected by the output filter.
Sicral 1B X-band OMUX ASSY

Rx-band

0.00

-20.00

-40.00

S11 MUX
S12 CH1
S12 CH2
S12 CH3
S12 CH4
S12 cover filter
S11 cover filter

-80.00

-100.00

-120.00

-140.00

8990

8930

8869

8809

8749

8688

8628

8568

8508

8447

8387

8327

8266

8206

8146

8085

8025

7960

7900

7840

7780

7720

7660

7600

7540

7480

7420

7360

7300

7240

7180

7120

7060

-160.00

7000

Isolation (dB)

-60.00

Frequency

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Design examples (w/g components to reject PIM)


Simple case is a single filter that provides isolation at
the PIM frequency band. Generally output BPF (TE101),
BSF or LP corrugated filter.
In general these filters dont have tuning elements.
They are two pieces of aluminum silver plated

Performance drivers are:


Contact pressure between filter body halves.
Results from previous studies show that a contact
pressure of 10000 psi (lb/in2) is required to
suppress PIM
Output flange connection
Body halves misalignment
High pressure flange
Mechanical load
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Passive Intermodulation

Design examples (w/g components)

The most complex situation is when a high number of


channels OMUX is subjected to a difficult PIM
performance with no output filter.
More than 20 w/g flange connections
4 hole flanges between channel filter and manifold.
As OMUX is built from INVAR and interconnecting
waveguide is aluminum. Contact pressure at flange
connection drops at some point in the thermal profile
during testing.
Aluminum base plate and brackets to mount hardware
can pull apart the flanges at some point during
thermal cycling.

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Passive Intermodulation

Design examples (coaxial assemblies)


The problem for coaxial devices
becomes much more complex.

Together with the same issues in waveguide, many other


are encountered
As the frequency is lower skin depth effects, defects on
the surface like scratches, silver plating problems will be
highlighted during testing.
Contacts at tuning element become more problematic
Dielectrics needed to support the striplines or present
for other High Power problems may apply stress
reducing contact pressure
Connections of components and connectors became
complex

Solder joints are needed

Connectors present contact issues and in general


have a poor performance unless specifically
developed and built for this purpose

Transmit Path J1
Antenna
Connection J3
Receive Path J2

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Passive Intermodulation

Design Rules (Electrical)


When possible (in complex assemblies) review the possibility of having an
output filter with known good PIM performance by design. This filter would
reduce the PIM level enough to make things easier for other components in
assembly mainly during manufacturing and assembly.
Realize electrical dimensions (e.g. couplings, tuning,) in a way that
mechanical contacts and assembly integration is easier.
Take into account degradation at contacts between materials with different
CTE (e.g. invar-aluminum)
Ensure adequate thickness of silver layer in drawing. As the frequency is
lower this becomes more important. S-band, L-Band, UHF
Whenever possible avoid tuning elements
If possible have contact joints in locations where current is low

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Passive Intermodulation

Design Rules (Mechanical)


Contact grooves, sufficient mounting hardware and configuration to have
pressure across the thermal profile
Filter body halves
Flanges
Filter body and lid
Resonators and filter body

Avoid deformation of the mating surfaces, structural design needs to
consider it (e.g. flanges with adequate thickness).
Reduce the number of joints
Avoid non linear materials (e.g. use of BeCu screws to support resonators
instead of steel).

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Passive Intermodulation

Testing: set-up layout


Cover filter
BB
to isolatate
PIM

BPF(F
1)
BPF(F
2)

H-plane
bend

BPF(F
2)

Al

Brackets
Cover filter BB

Al

BPF\LPF
existing in
lab
(to reduce
the noise)

Set-up validation is required prior formal


test:
Detection system works properly
Set-up meets 5 dB better than
required specification

Al

Baseplate not bolted if


possible (use weights)

Detection
diplexer

location of
DUT input
interface

Cover filter BB

hot plate

Set-up adequate PIM


performance validation

Detection
diplexer
SA
Input filter

SA

Cover filter BB
Al

BPF

Al
Al

Example of configuration
during formal test.
DUT is a 2 channel MUX
with output cover filter

DUT has
vertical w/g
input
(circulator)
Al

DUT
hot plate

BPF

BPF/ LPF filter


existing from
current X-band
set-up!

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Passive Intermodulation

Testing: typical PIM generators


The presence of the tuning screw results on
a local enhancement of the surface current Js
Screws contact to threads on waveguide
body remains always hard to control
This is the most typical generator to verify
that detection system is able to detect PIM

Circulators are the other type of


PIM
Generators most often used

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Passive Intermodulation

Test summary report

PIM detect

PIM free

DUT PIM measured

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Passive Intermodulation
PIM summary
PIM is generated by the device non-linear response
The issue typically associated with:
- high transmit power level
- high receive sensitivity
- only one antenna (common port) for Tx and Rx

PIM product frequency is predictable


PIM level difficult to analyze or predict
Odd PIM orders are found to be more problematic
Carriers
PIM (dB)

Example:

PIM Products

fc1=3705 MHz
COMUX

fc2=4195 MHz

Tx

Tx Band=3700 4200 MHz


Rx Band=5900 6400 MHz

Rx
F1+F2

3rd

5th

7th

9th

11th

Freq (MHz)

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Passive Intermodulation
Dominant contributors of non-linearity(for passive device):
- similar or dissimilar metal-to-metal joints
- poor mechanical contact
- poor surface finish
- high current density
- temperature variation
- magnetic non-linear effects

Simple design rules to reduce PIM level:


- limit the number of parts in the current path
- ensure adequate contact pressure
- smooth surface finish for connecting parts
- eliminate contaminants in the current path
- adequate and uniform plating thickness
- avoid magnetic materials in the current-carrying-path

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Thank You

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