Professional Documents
Culture Documents
Basic Properties
Band Structure
Eg = energy gap
Silicon ~ 1.17 eV
Ge ~ 0.66 eV
Intrinsic Semiconductors
Pure Si, Ge are intrinsic semiconductors.
Some electrons elevated to conduction band
by thermal energy.
Fermi-Dirac Distribution
Conduction Electrons
If - EF >> kT then
Conduction Electrons
A full analysis taking into account the
Holes
The holes act like positive charge carriers in
Holes
In terms of energy level electrons tend to
Photon Excitations
Photons can excite electrons into the
Impurity Semiconductors
An impurity is introduced into a
Impurities
For silicon
n-type is pentavalent: As, P
p-type is trivalent: Al, Ga, B
Impurity Semiconductors
n-type
Impurity Semiconductors
p-type
Valence band
For Si(As):
Econduction - Edonor = 0.049 eV
T = 0K
Valence band
T = 300 K
For Si(As):
Econduction - Edonor = 0.049 eV
Remember kT = 0.025 eV
Valence band
For Si(Ga):
Eacceptor - Edvalence = 0.065 eV
T=0K
Valence band
T = 300 K
For Si(Ga):
Eacceptor - Edvalence = 0.065 eV
Remember kT = 0.025 eV
The pn junction
Forming a pn junction
p-type and n-type semiconductors are placed in contact.
electrons in the conduction band in the n-type diffuse across
Conduction band
p
Valence band
Valence band
10
Forming a pn junction
p-type and n-type semiconductors are placed in contact
electrons in the conduction band in the n-type diffuse across
Conduction band
p
Valence band
Valence band
Forming a pn junction
once in the p-type they can drop down into the valence
band and to fill up one of the hole states.
Conduction band
Conduction band
p
Valence band
Valence band
11
Forming a pn junction
once in the p-type they can drop down into the valence
band and to fill up one of the hole states.
Conduction band
Conduction band
p
Valence band
Valence band
Forming a pn junction
Electrons continue to diffuse across the junction.
The area of the p-type near the junction becomes more
12
Depletion Region
The depletion region is free of mobile charge carriers.
The typical thickness of the depletion region is about
+++
- - -
+++
- - -
+++
- - -
+++
13
field that points from the n-type to the p-type. This field
tends to sweep any mobile electrons in the region back to
the n-type and any mobile holes back to the p-type.
Depletion region
= mobile hole
- - - - - - - - - - - - - - - - -
Ed
= mobile electron
= fixed ionized
donor atom
= fixed ionized
acceptor atom
EF
+
+
+
+
Valence band
14
Electron
Energy
Conduction band
EF
+
+
+
+
Valence band
Thermal Current
Recombination Current
EF
Conduction band
+
+
+
+
Valence band
15
Thermal Current
Electrons in the valence band of the p-type can acquire enough thermal
energy to jump into the conduction band. They diffuse into the
depletion region and are swept into n-type by the E-field.
Electron
Energy
Conduction band
EF
+
+
+
+
Valence band
Recombination Current
Electrons in the conduction band of the n-type can acquire enough thermal
energy to rise higher in the conduction band. They can then diffuse across the
depletion region to the p-type and drop into the valence band filling a hole.
Electron
Energy
Conduction band
EF
+
+
+
+
Valence band
16
Biasing pn junctions
Apply a voltage across a pn junction:
n
+
V
Forward Bias
V
Reverse Bias
17
Reverse bias
A negative voltage is applied to the p-region. The
Reverse bias
The increase in the potential energy difference reduces the
recombination current.
Electron
Energy
Thermal current
EF
Conduction band
Recombination current
+
+
+
+
E + eV
Valence band
18
Forward bias
A positive voltage is applied to the p-region. The
Forward bias
The increase in the potential energy difference greatly
Electron
Energy
Thermal current
Recombination current
Conduction band
EF
+
+
+
+
E - eV
Valence band
19
Diodes
Diodes
The pn junction is used an
20
Vturn-on
Realistic Model
In forward bias the
21
Biased pn junction
In terms of positive current the current vs.
Breakdown
In sufficiently large reverse bias is applied to a diode an
avalanche occurs.
At the breakdown voltage charge carriers gain enough
energy (from the reverse bias electric field) between
collisions to break a covalent bond in the lattice and create
another charge carrier.
These two charge carriers are accelerated and create more
charge carriers leading to an avalanche of charge
carriers.
This occurs very sharply at a certain voltage.
Ordinary diodes usually fail in these conditions.
22
Real Diodes
The schematic symbol for a diode is
23
Zener Diodes
The p-n junction diode
24
Zener Diode
The characteristic curve
Zener Diode
When forward biased, the zener has a turn-on voltage of
25
biased properly.
LEDs are available in various colours:
red, green, yellow, orange, blue and
white.
Forward knee voltage does vary with
LED color (from approximately 1.2 V
to approximately 4.3 V.)
LEDs
LEDs usually have clear
26
LEDs
Since LED cases are not labeled, a means of identifying the
Laser Diodes
Laser diodes are basically LEDs driven at higher
27
Diode Application:
The Half-wave rectifier
28