The Zero Bias Schottky Detector Diode

Application Note 969

Introduction
A conventional Schottky diode detector such as the Avago
Technologies HSMS-8101 requires no bias for high level
input power above 1 mW. However, at low levels, a
small amount of dc bias is required for detection to take
place. Even though this bias current is at the microampere
level, this requirement is often difficult to supply. A
Schottky diode has been developed to eliminate this
need for dc bias.

Forward Voltage Characteristic

Figure 1 shows the forward current characteristics of the

HSMS-8101 Schottky diode and two versions of zero bias
diodes, the HSMS-2850 and HSCH-3486. These curves
are close to the curves predicted by the diode equation
with the constants shown in Table 1. The HSMS-8101, a
conventional (n-type or mixer) Schottky requiring dc bias
to operate as a detector, stands out from the two (p-type)
zero bias diodes with its very low value of saturation
current and its low series resistance.

Since all diodes in this discussion are Schottky diodes, the

forward current obeys the equation:

100
HSMS-8101

TEMPERATURE = 25 C

=
=
=
=

0.52
I0.52
+ IS
I + IS
0.52
IS
0.52
IS

0.52
= 5.8 x 106
9 x 10-8
0.52
=
= 5.8 x 106
9 x 10-8
=

1RV
= 1+
RVL
RV + RL
R
1+
RL
RVR+L RL

2 = 1
1

HSMS-2850
HSCH-3486

0.1

2 =
1+
0.01
2=
0

I for the constants q, electron charge,

where the
= values
/
V
T, room temperature,
and k, Boltzmanns constant, have
I
= / The main difference in the behavior of the
been inserted.
V
different types of diodes is embodied in Is, the saturation
current. There
V also be differences in Rs, the series
may
I = IS
resistance.

V -1
e .026
I = IS
.026
e
-1
I + IS
I
=
and
V
I.026
+ IS
I
=
and
V
.026

RL

210= 1

FORWARD CURRENT, mA

I = IS
(VIRS)

q
enkT
-1
I = IS
(VIRS)

nkT
e
-1
The ideality factor, n, is close to unity for these diodes, so
the equation may
be written:
VIRS
I = IS
.026S
eVIR
-1
I = IS
.026
e
-1

0.1

1+

261x 10-8
-8 0.4 0.5
0.2
26FORWARD
xIS100.3
VOLTAGE, V

0.6

0.7

IS
Figure 1. Forward Characteristics of Detector Diodes
2
5440-1
3 = 2 (1 - r )
3 = 2 (1 - r2)
Table
1.
ZD - 50
Part Number

Is (Amps)

Rs ()

Cj (pF)

HSMS-8101
ZZ +- 50
50

9 x 10-8

1.08

0.23

3 x 10-6

1.06

25

0.17

HSCH-3486

5 x 10-6

1.08

50

0.1

= D
HSMS-2850
ZD + 50

0.52

2 = 1

RL

RV + RL
RV
1 +
RL
1
1RL
RL
=
=
or 750,000 mV/W. 22 = 11 RV + RL = For a Rtypical case,
1RVV
RVR+L RL
1 +that:
0.52
Since the
6of the = so
1
+
= actual-8sensitivity
=

= 5.8
x
10
RL
2
1
Rfrequency
9 x detector
10
HSMS-8101
with
RV zero
+1RL with R
in gigahertz and
L
V
1+
2 some
=
bias is close to zero,
major saturation
current
in amperes.
RL
26 x 10-8Figure
corrections in the analysis are
needed.
2
shows
how
capacitance
1+
Consideration of0.52
the effects11 Iof
modifies
voltage
sensitivity.
Since the
S
2 =
1capacitance,
=
load
=
junction
resistance,
-8
change
is
due
to
the
rf
current
split
2
2
x 10-8
IS (1 + C 2j RS RV) 26
1x 10 between C and R , the reduction is
1 + 26this
and reflection
loss will bring
j
V
2 = 1 +
IS
analysis close to reality.
3 = 2 (1 26
- r2x) IS10-8more severe at higher frequencies,
1+
when the capacitive susceptance is
IS
Cj = 0.1 pF, RS = 50 ,
higher. The inverse relationship with
0.0263 = 2 (1 - r22)
saturation current is still present at
, = (1 - r )
and RV =
IS 3 Z2D - 50
low frequencies or high saturation
1

3== 2 (1 - Rr2L)
2 = Z1D + 50
= current values. However, predicted
+ RL valuesRVof voltage sensitivity are still
ZDR- V50
1+
unreasonably
high.
1,000 = ZmV
D - 50
RL
= Z + 50
=
2
6
D+
50
f + 2 x 10 IS ZZW
D - 50
= D
ZD + 50
1
RL
2== 1
2 = 1
x 10-8
RV + RL
R26
V
11++
RL IS
IS

Junction CapacitanceR
1
L
2
2 =of1junction
RL1 capacitance
== 2 (1
The effect
1 - r )on
3
=
RL =been derived
RV
= 1 RV + has
current22sensitivity
RV26+ xRL10-8 1 + RV
in Section 11.2
1. Adding
RL
1+
1 +of Reference
1
RLRL
IS = sensitivity
this effect to the voltage
=
Z1D - 50
2
analysis gives:
RV + RL
RV
=
1+
1
ZD + 50
RL

2 =
= 2 (1 - r21) -8
3
2 =
26 x 10
1 + 26 x 10-8
IS
1+
1
IS

=
2
ZD - 50
26 x 10-8
=
1
+
3 = Z2D(1+-50
r2)
IS
3 = 2 (1 - r2)
1000

100

ZD - 50
= ZD - 50
= Z + 50
ZD
D + 50
Cj = 0.1 pF
Rs = 50

3 = 2 (1 - r2)
1 GHz

50

RV

3 GHz

ZD - 50

0.10 pF

ZD + 50

1
10-8

HSMS-2850
10-7

10-6
Is - SATURATION CURRENT, A

Figure 2. Effect of Capacitance on Voltage Sensitivity

5440-2

HSCH-3486

10 GHz
10

HSMS-8101

1 - VOLTAGE SENSITIVITY, mV/W

I = IS
(VIRS)

nkT
e
-1
q

I = IS q (VIRS)
I = IS nkT (VIRS)
Voltage Sensitivity
enkT
-1
e q
-1
be Streated
I = IS diode
)
S (VIR
VIR
as
A detector
may
I = IS enkT

-1
.026 across the diode
a current generator
e
-1
(1)
video resistance.
VIR
VIRSS
I = IS sensitivity,
The voltage
I = IS .026 , is the
eVIR
.026S -1sensitivity, ,
product of the
e current
-1
IS I
and theI==
video
resistance,
/ .026 the inverse
eV of-1current with
of the derivative
respect to voltage.
I
= / I
= / V
V

I V
I==IS /
.026
eVq -1

V (VIR
S)
I = IS

I = IS enkT
-1
I = IS .026
e .026
-1
I
e =V I +-1IS
and
I = IS V
.026.026
e
-1
I + IS
I
VIR

S
I
+
I
The Perfect
Detector
I =
and
= .026S
I = IS V
and
.026
q
Neglecting
parasitic
reflection
V
I.026
+-1Iand
) e
I = IS
(VIR0.52
S
= SI =
nkT and
losses:
e
I V
+ IS-1 .026
0.52
= 0.52
= I + II
=+
/ IS
S
q S I0.52
VIR
V
=

I = IS q (VIR
)
S

nkT
small
values
IS+I)SIS-1of current:
.026
I = IS eFor
(VIR
nkT -1
e
0.52-1
= 0.52

= qV
I = IS IIS
(VIR
)

S
S nkT
0.52
.026
0.52
x 106-1
VIRS =
I
e -8 =-15.8
VIRS 9 IxS 10
I==IS / V
current sensitivity is
.026theoretical
I = IS eThe
-1 0.52
.026
20
amperes
per
watt
so: 106
=
e
0.52-8 I +
=(2)I5.8
-1
S x
= 9I
x 106
=-8 = 5.8
x 10
and
VIR0.52
x 10
9V
S
.026
0.52
x 106
V I1==

=IS .026
= 5.8
+-82 C-12j RS RV)
9ISx(1e10
I = IS I

= / eI.026 -1
0.52
= / V
1 = bias
0.52
or, for zero
current:
V
1== I0.52
(1 + 22 C22j RS RV)
S
+ C= 50
RV)
j RS,
IIS+(1II
S R0.52
S
IS1j =
= 0.1 pF,
I +C
I

/
=
2
2
and
V and
C , j RS RV)
IS (1V+0.026
V .026 RV =

I = IS V
IS = 50 ,
Cj= 0.1 pF, R
I = IS e .026 -1
pF, RSS = no
50 ,
Cj = 0.1
0.52
.026analysis
This
indicates
advantage
0.026
e

-1
=
and
Rthe
= 0.026
,
V
in using
zero
bias
and
RVIS=pF,VR
Cj = 0.1
, diodes
ISS =, 50
0.52
I
because
sensitivity
varies
inversely
S
= I
mV
I + IIS= IS 1,000
0.026
.026

=
and
R
=
,
=
I
and I +
I
+
I
V
as
saturation
current,
and
the
I S
e
S
-1
and V = .026 f 2 + 2 xIS106 IS W
standard
HSMS-8101
diode
has
the
V
.026
0.52
1,000
mV
6
=
=
5.8
x
10
lowest saturation
current.
In
fact,
1,000
mV no
= x 10
-8
= f92I
I10
+6ISI since
W
+
2
x
improvement
is
needed
the
0.52
and f 2 +1,000
2=x 106 ISS W
mV
= 0.52sensitivity
V
.026
is:
=
= 0.52
I
= I +SIS
f 2 + 2 x 106 IS W
I + IS
0.52
1 =
2 C2 R R )
I0.52
(1
+

S
j S V
=
0.52
6
= 0.52 -8 = 5.8 xI +
10I
S
x 10
= 90.52
= IS
IS
Cj = 0.1 pF, RS = 50 ,
0.026
0.52
and
R
,
0.52
V=

=
1 = 0.52
2
IS
I
2
2
SV)6
(1 + =C5.8
= IS0.52
10
j RSx R
= 9 x 10-8
= 5.8 x 106
-8
9 x 10

10-5

10-4

ZD - 50
ZD + 50

100

1 -8
10

10 GHz

10-7

10-6
Is - SATURATION CURRENT, A

HSCH-3486

10

HSMS-2850

3 GHz

10-5

10-4

Figure 3. Effect of Load Resistance and Capacitance on Sensitivity

5440-3

1.0
0.9
0.8

0.08 pF

0.7
3 nH

0.6

50

RV

0.5
0.10 pF
0.4

5
7
FREQUENCY, GHz

Figure 4. Reflection Coefficient for the HSCH-3486

5440-4

Cj = 0.1 pF
Rs = 50
RL = 105

1 GHz

HSMS-8101

2 - VOLTAGE SENSITIVITY, mV/W

1000

S11 - REFLECTION COEFFICIENT MAGNITUDE

Load Resistance
A detector diode may be considered as
a video voltage source of impedance
RV feeding a load resistance RL. The
voltage across the load, 2,
is reduced by the ratio of
RL to RV + RL
when the ratio of video resistance to
load resistance is small, 2 = 1. This
is a common condition for biased
detectors. However, at zero bias the
1 small
diode resistance RisL usually not
2 = 1
=
compared to load
RV + Rresistance.
RVFor a
L
1 + of 100
typical load resistance value
RL
k, the sensitivity is:
The effect of load resistance is shown
in Figure 3. The inverse relationship
1
between sensitivity
and saturation
2 =
current in 1 combined
26 x 10-8 with the
1+
direct relationship
due to load
resistance results ISin a maximum
voltage sensitivity when IS = 3 x 10-7
A. However, these theoretical results
3 =still
2 (1 unreasonably
- r2)
for are
high,
particularly at the lower frequencies.

11

Using these data for , one can

calculate 3 , as shown in Figure
5, for a diode immersed in a 50
system without impedance matching
networks.
Note that the values of Is for the three
diodes under discussion are flagged
in Figures 2, 3 and 5. However, those
three curves were calculated based
upon a value of Rs and Cj which are
typical only of the HSCH-3486.
The effects of the package parasitics
show up clearly in Figure 5. Overall
values of sensitivity are dramatically
4

In theory, one can achieve voltage

sensitivities as shown in Figure 6
over a narrow band of frequencies
through the use of a low loss
impedance matching network at
the input to the diode(3). However,
this is unfortunately not the case
at the lower frequencies where the
reactance of the Cj is low, resulting
in a very high value of impedance
for the RV - Cj parallel combination
(in excess of 1 k). The finest silverplated stub tuners lack sufficient Q to
match the very high value of to 50
the high standing wave at the
diode terminals (output of the tuner)
cause losses in the best tuners to rise
dramatically. The situation is even
worse when the impedance matching
network is realized in some lower-Q
medium such as microstrip. As a
result, a value of 40 mV/W at 1 GHz
and 30 mV/W at 3 GHz represent a
practical upper limit to in real-world
detector circuits.

6
3 - VOLTAGE SENSITIVITY, mV/W

3 GHz

1 GHz

HSMS-8101

10 GHz

1
0 -8
10

10-7

10-6
Is - SATURATION CURRENT, A

Figure 5. Effect of Mismatch, Load Resistance and Capacitance on Sensitivity

200

5440-5

HSMS-2850

100

HSCH-3486
10
RL = 100 k
6

4
5
6
7
FREQUENCY, GHz

10

Figure 6. Comparison of Two Zero Bias Schottky Diodes

5440-6

HSCH-3486

2
HSMS-2850

While the calculation of is straightforward, it requires a knowledge of

the diode parasitics. In Figure 4, an
equivalent circuit is shown for the
HSCH-3486 zero bias Schottky diode,
including package inductance and
package capacitance. Assuming a
value of RV = 5 k (calculated from
the value of Is given in Table 1),
can be calculated as shown in Figure
4. Note that the package inductance resonates with the package
and diode junction capacitance to
produce a partial impedance match
near 7 GHz.

reduced at 1 GHz, where is very

nearly equal to unity. At 3 GHz,
sensitivity is reduced, but not by so
much as at 1 GHz, with the result that
3 is higher at 3 GHz than at the lower
frequency. The reduction in sensitivity
at 10 GHz due to package parasitics
is quite small, since is lower at that
frequency for the Avago package
number 18.
The calculations and discussions so far
make it difficult to directly compare
the two zero bias Schottky diodes.
Using the equations given earlier, one
can calculate 2 for the HSCH-3486
and the HSMS-2850 as a function of
frequency, as shown in Figure 6.
The different values of Cj, Is and Rs of
the two diodes result in the HSMS2850 providing greater performance
at frequencies below 3 GHz while the
HSCH-3486 yields superior sensitivity
at higher frequencies.

2 - VOLTAGE SENSITIVITY, mV/W

Reflection Loss
The analysis so far has assumed
that all incident power is absorbed
by the diode. Normally this is a
good assumption because low loss
matching circuits can be designed
to eliminate reflection losses. With
zero bias detectors, however, the
mismatch may be so severe that it
is not possible to eliminate these
reflection losses. In fact, most of the
incident power may be absorbed
by losses in the matching network.
If we go to the other extreme and
assume no matching, the sensitivity
becomes:
where r is the reflection coefficient of
the diode.
Assuming the diode impedance, ZD,
terminates a 50
system:
The diode impedance is a function of
the package parasitics as well as the
frequency.

10-5

10-4

Temperature Effects

Measurement of Cj and RV

All of our computations so far have

assumed a temperature of 300
K. The first equation in this note
indicates that, for a given value of
forward voltage, the forward current
of a Schottky diode depends upon
temperature. The diode's current
sensitivity, , is also a function of
temperature (4). Reference 4 gives
a good treatment of temperature
effects of a Schottky diode with
fixed (external) bias. However,
in a zero bias Schottky, Is is also
temperature-dependent, adding an
extra variable to the total equation
for vs. temperature. Thus it is that a
complete discussion of the effects of
temperature on voltage sensitivity is
beyond the scope of this note.

The Schottky diode (without package)

can be represented by the three
element equivalent circuit shown
in Figure 2. Rs (50 in this case)
is easily measured. However, the
measurement of RV and Cj cannot be
done by conventional means.
Typically, the junction capacitance
of a Schottky diode is measured at 1
MHz. For a conventional diode such as
the HSMS-8101, RV = 0.026/Is is very
high, permitting the measurement
of junction capacitance at this low
frequency. In these diodes, video
resistance is determined by the
external dc bias which is applied
when they are used.
In a zero bias Schottky, however, RV
is set by the saturation current and
is thus an unknown. Moreover, it
is the nature of zero bias Schottky
diodes that R V will be lower than
1/C at 1 MHz, thus shorting out the
capacitance and making it impossible
to measure by conventional means.
Some simple calculations, based upon
the diode equivalent circuit shown
in Figure 2, will reveal the fact that Cj
for zero bias Schottky diodes must be
measured at frequencies much higher
than those used in capacitance or
impedance bridges.

-15
50

ATTENUATION, dB

-20

90.7 pF
50

-25

50

7.5 k
50

-30
-35
-40
DATA TAKEN FROM
AGILENT 8753C
-45
0.001

Figure
5440-77. Agilent 8753C Display

0.01

0.1
FREQUENCY, GHz

A convenient method of measurement

involves measuring the diodes
attenuation as a series element in a 50
transmission line. Very low power
levels are used in an instrument such
as the HP8753C (which offers the
advantage of a logarithmic frequency
scale), resulting in a display like the
example shown in Figure 7.
At low frequencies, the video
resistance sets the attenuation,
since 1/C is so high. However,
at VHF (and higher) frequencies,
junction capacitance dominates the
total attenuation. Straightforward
modeling (as shown in the figure)
permits the calculation of Cj = 0.091
pF and RV = 7.5 k for the sample
tested.

Summary
Detector diodes are most sensitive at zero bias when
the saturation current is small, corresponding to large
video resistance. However, there is a limit to sensitivity
when the resistance is so large that it cannot be matched.
An optimum diode is designed to have the proper
saturation current. Choice of saturation current involves
a compromise between sensitivity due to large resistance
and loss due to matching.

References
1. Torrey, H.C. and Whitmer, C.A., Crystal Rectifiers, MIT Radiation
Laboratory Series, Vol. 15, McGraw-Hill (New York) 1948.
2. Watson, H.A., Microwave Semiconductor Devices and Their Circuit
Applications, P. 379, McGraw-Hill, 1969.
3. Avago Technologies Application Note 963, Impedance Matching
Techniques for Mixers and Detectors.
4. Avago Technologies Application Note 956-6, Temperature Dependence
of Schottky Detector Voltage Sensitivity.

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Data subject to change. Copyright 2005-2010 Avago Technologies. All rights reserved. Obsoletes 5952-9823E
5963-0951EN - August 16, 2010