You are on page 1of 6

AOD450

N-Channel Enhancement Mode Field Effect Transistor


General Description

Features

The AOD450 uses advanced trench technology and


design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in inverter, load
switching and general purpose applications. Standard
product AOD450 is Pb-free (meets ROHS & Sony
259 specifications). AOD450L is a Green Product
ordering option. AOD450 and AOD450L are
electrically identical.

VDS (V) = 200V


ID = 3.8A
RDS(ON) <0.7 (VGS = 10V)

193
18

TO-252
D-PAK

Top View
Drain Connected to
Tab

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted


Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25C

Continuous Drain
Current
Avalanche Current

Repetitive avalanche energy L=1.35mH

TC=25C
Power Dissipation B
Power Dissipation

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

V
A

2.7

IAR

mJ

10

EAR

25
2.1

1.3

TJ, TSTG

-55 to 175

Symbol
t 10s
Steady-State
Steady-State

12.5

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B

30

ID
IDM

PD

TC=100C
TA=25C

Units
V

3.8

TC=100C

Pulsed Drain Current

Maximum
200

RJA
RJC

Typ
17.1
50
4

Max
30
60
6

Units
C/W
C/W
C/W

AOD450

Electrical Characteristics (TJ=25C unless otherwise noted)


Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=10mA, VGS=0V

200

IGSS

Gate-Body leakage current

VDS=0V, VGS=30V

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=15V

10

TJ=55C

VGS=10V, ID=3.8A
TJ=125C

gFS

Forward Transconductance

VSD

IS=1A, VGS=0V
Diode Forward Voltage
G
Maximum Body-Diode Continuous Current

IS

VDS=15V, ID=3.8A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge

Units

Zero Gate Voltage Drain Current

Static Drain-Source On-Resistance

Max

VDS=160V, VGS=0V

IDSS

RDS(ON)

Typ

VGS=0V, VDS=25V, f=1MHz


VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=25V, ID=3.8A

100

nA

0.55

0.70

1.1

1.32

8.7
0.8

215

pF

32

pF

7.2

pF

5.5

3.82

nC

0.92

nC

Qgs

Gate Source Charge

1.42

nC

Qgd

Gate Drain Charge

1.47

nC

tD(on)

Turn-On DelayTime

6.3

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

Qrr

3.3

ns

10.5

ns

2.8

ns

IF=3.8A, dI/dt=100A/s

59

Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/s

142

ns
nC

VGS=10V, VDS=25V, RL=6.5,


RGEN=3

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C.
D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
Rev0: Feb 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD450

TYPICAL ELECTRICAL CHARACTERISTICS


14

1.0E+02

12

10V

1.0E+01

8V

1.0E+00

VDS=15V

ID(A)

ID(A)

10

6
4

1.0E-01

7V

494
692

1.0E-02

VGS=6V

0
5

10
VDS(Volts)

15

20

800
Normalized On-Resistance

700
VGS=10V

500
400
300
200
0

10

193
18

2.4

600

VGS(Volts)
Figure 2: Transfer Characteristics

Figure 1:On-Region Characteristics

RDS(ON) (m)

593
830

1.0E-03
0

1400

2.2
2

VGS=10V, 3.8A

1.8
1.6
1.4
1.2
1
0.8
0

ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

25

50

59 125
100
142
Temperature (C)
75

150

175

Figure 4: On-Resistance vs. Junction Temperature

1.0E+01
ID=3.8A

1200

1.0E+00

125C

125C

1.0E-01

1000

IS (A)

RDS(ON) (m)

4.6325C

125C

1.0E-02

800
25C

600

1.0E-03

25C

1.0E-04

400

1.0E-05

200
6

10

12

14

16

18

20

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

AOD450

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


300

10
VDS=10V
ID=3.8A

250
Capacitance (pF)

VGS (Volts)

8
6
4
2

Ciss

200
150

4.63

100

Coss

50

494
692

Crss

593
830

0
0

10

15

20

25

VDS (Volts)
Figure 8: Capacitance Characteristics

Qg (nC)
Figure 7: Gate-Charge Characteristics

193
18

100.00

200
TJ(Max)=175C, TC=25C

160

10.00

TJ(max)=175C
TC=25C

RDS(ON)
limited

1.00

Power (W)

ID (Amps)

10s
100

120
80

1ms
0.10

DC

40

0.01
0.1

10
VDS (Volts)

100

1000

ZJC Normalized Transient


Thermal Resistance

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
RJC=6C/W

0.001

0.01

59 0.1
142

10

Pulse Width (s)


Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe


Operating Area (Note F)

10

0
0.0001

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

0.01
0.00001

Ton

Single Pulse

0.0001

0.001

0.01

0.1

Pulse Width (s)


Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

10

100

AOD450

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


30

ID(A), Peak Avalanche Current

5
Power Dissipation (W)

4
3
2
TA=25C

25
20
15

4.63
10

494
692

5
0

0
0.000001

0.00001

0.0001

0.001

25

50

40
Power (W)

Current rating ID(A)

Time in avalanche, t A (s)


Figure 12: Single Pulse Avalanche capability

3
2

50

75
100
125
150
TCASE (C)
Figure 13: Power De-rating (Note B)

175

193
18
TA=25C

30
20
10

0
0.001

0
0

25

50

75

100

125

150

175

TCASE (C)
Figure 14: Current De-rating (Note B)

10
ZJA Normalized Transient
Thermal Resistance

593
830

59
0.01

1
142

0.1

10

100

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W

Single Pulse

PD
Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)


Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

1000

Pulse Width (s)


Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

100

1000

This datasheet has been downloaded from:


www.EEworld.com.cn

Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn

All Datasheets Cannot Be Modified Without Permission


Copyright Each Manufacturing Company

You might also like