INTRODUCTION TO ELECTRONICS (21604)

HOMEWORK #6
Assoc.Prof.Dr. nci LESZ
DUE DATE and TIME 11 April 2003 - 12.00

From Sedra & Smith (Examples are 10 points each, Problems are 20 points each)
1. Exercises 5.22 and 5.23.
2. Study Example 5.9 and then solve Exercise 5.24.
3. Study Example 5.10 and then solve Exercise 5.26.
4. Problems 5.1, *D5.7 and *5.26.
1a. Exercise 5.22: (a) If a signal source is capacitively coupled to the gate then Rin =
RG = 1 M.
(b) Provided the MOSFET operates in the saturation region,
I D = 0,25mA / V (VGS 2V ) = 1mA . Thus VGS = 4 V. Also VG = 0 V becase no current
2

flows into the gate. Thus VS = -4 V and RS =

VS VSS
= 6k .
ID

(c) Allowed swing at the drain is 2V. Since the MOSFET operates in the
V VD
saturation region, VGS 2V VDS VG 2V V D VD 2V . Since R D = DD
,
ID
and vDmin = VD 2V = 0V, RD = 10k.
1b. Exercise 5.23: Using the RS value we found above,

I D = 0,25mA / V (VGS 3V ) 2 = 0,25mA / V (VG VS 3V ) 2

VG = 0 V and VS = VSS + I D R D yields I D = 0,25mA / V (0 I D RS + VSS 3V ) , i.e., we

88 26,2
obtain a second order equation, the solution of which gives I D1 / 2 =
mA , with
72
ID1 = 0,86 mA, ID2 = 1,59 mA. If we take the lower value for drain current we see
I 1mA
that I D = D
= 0,14 = 14% . With the higher value that change would have
1mA
been +59%.
2

2. Exercise 5.24: For double the current by changing the width only, by definition,
V
W2 = 2*W1 = 200 m. Since ro = A , ro2 is decreased by half, i.e., ro2 = 500k. Since
ID
5V VGS 5V 2V
I o =
=
= 6 A , Io = 206 A.
ro 2
5k

3. Exercise

ro , p =

V Ap
I REF

5.26:

g m = 2k n'

Using

W
I REF = 1,06mA / V ,
L

ro ,n =

V An
I REF

= 128k

and

= 192k , Av = g m (ro ,n || ro , p ) = 81,4 V / V .

3,97 o
t ox
20 nm oxide Cox = 1,75 fF/m2, 100 nm oxide Cox = 0,35 fF/m2 as also given
C
on Table 5.1. WE know that Aox =
. Thus for 1 pF capacitance:
C ox
20 nm oxide Cox = 1,75 fF/m2, Aox = 0,28 mm2 and 100 nm oxide Cox = 0,35
fF/m2, Aox = 0,06 mm2.
On the other hand for 10 pF capacitance:
Assuming W = L for simplicity, maximum dimensions, i.e., maximum A, would be
for minimum oxide thickness, that is 20 nm. Aox = 2,8 mm2 W = L = 169 m.

4a. Problem 5.1: Using values given in Table 5.1 on p. 364 and C ox =

3,97 o
, for 50 nm oxide thickness, Cox = 0,70 fF/m2 ,
t ox
with help from Table 5.1 on p. 364, kn = n Cox = 40,7 A/V2. For operation in the
saturation region the minimum requirement is V DS = VGS Vth = 2,5V . Using this

4b. Problem D5.7: From C ox =

k n' W
(VGS Vth )2 = 1A , W/L = 7862 m/m is obtained. If L = 2 m,
2 L
P = W = 15725 m = 15,725 mm, a very large value!!!!
Total device area is Atotal = [L(drain) + L(channel ) + L( source)]P = 94350 m 2
The last part of this problem requires a quick look at page 436 for a simple
1
= 0,762 , and
reminder of Eq. (5.13) according to which rDS = '
kn W
(VGS Vth )
2 L
V DS = rDS I D = 0,762V .
value in I D =

4c. Problem *5.26:

Case

VS(V)

VG(V)

VD(V)

ID(A)

100

b
c
d

Type

Mode

CoxW/L(A/V2)

Vt(V)

NMOS saturation

200

400

NMOS saturation

200

-4,5

50

PMOS

saturation

400

-1,5

-0,5

450

PMOS

saturation

400

-1,5

200

PMOS

triode

400

-1

800

PMOS

saturation

400

-1

-2

72

NMOS saturation

100

0,8

-4

-3

270

NMOS

100

0,8

triode