2N7002K

60V N-Channel Enhancement Mode MOSFET - ESD Protected

SOT-23

FEATURES

Unitinch(mm)

RDS(ON), VGS@10V,IDS@500mA=3
RDS(ON), VGS@4.5V,IDS@200mA=4
Advanced Trench Process Technology

0.120(3.04)
0.110(2.80)

High Density Cell Design For Ultra Low On-Resistance

Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
0.056(1.40)

ESD Protected 2KV HBM

0.047(1.20)

Lead free in comply with EU RoHS 2011/65/EU directives

Green molding compound as per IEC61249 Std. . (Halogen Free)

0.008(0.20)

0.079(2.00)

0.003(0.08)

0.070(1.80)

MECHANICAL DATA
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750,Method 2026

0.004(0.10)

0.044(1.10)

0.000(0.00)

0.035(0.90)

Apporx. Weight: 0.0003 ounces, 0.0084 grams

0.020(0.50)

Marking : K72

0.013(0.35)

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R

S ym b o l

Limit

Uni ts

D ra i n- S o urc e Vo lta g e

V DS

60

G a t e -S o ur c e Vo lt a g e

V GS

+20

C o nt i nuo us D ra i n C ur re nt

ID

300

mA

P uls e d D ra i n C urre nt

ID M

2000

mA

PD

350
210

mW

T J ,T S TG

-5 5 to + 1 5 0

RJA

357

1)

M a xi mum P o we r D i s s i p a t i o n
O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal Resistance(PCB mounted)2

TA = 2 5 OC
TA = 7 5 OC

C /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

October 29,2010-REV.02

PAGE . 1

2N7002K
ELECTRICALCHARACTERISTICS
P a ra me te r

S ymb o l

Te s t C o nd i ti o n

Mi n.

Typ .

Ma x.

Uni ts

D ra i n-S o urc e B re a k d o wn Vo lta g e

B V DSS

V G S = 0 V , ID = 1 0 A

60

Ga te Thre s ho ld Vo lta g e

V G S ( th)

V D S = V GS , I D = 2 5 0 A

2 .5

D ra i n-S o urc e On-S t a t e Re s i s ta nc e

R D S ( o n)

VGS=4.5V , I D=200mA

4 .0

D ra i n-S o urc e On-S t a t e Re s i s ta nc e

R D S ( o n)

VGS=10V , I D=500mA

3.0

Ze ro Ga t e Vo lt a g e D ra i n C ur re nt

ID S S

VDS=60V , VGS=0V

Gate Body Leakage

I GS S

V GS= + 2 0 V , V D S= 0 V

+10

Forward Transconductance

g fS

V D S = 1 5 V , ID = 2 5 0 mA

100

mS

To ta l Ga te C ha rg e

Qg

V D S = 1 5 V, ID = 2 0 0 m A
VGS=5V

0 .8

nC

Tur n-On Ti me

t on

20

Tur n-Off Ti me

t off

40

Inp ut C a p a c i ta nc e

C i ss

35

Out p ut C a p a c i t a nc e

C oss

10

Re ve rs e Tra ns fe r C a p a c i ta nc e

C rss

S t a ti c

Dynamic

VDD=30V , RL=150
ID=200mA , VGEN=10V
RG=10

V D S= 2 5 V , V GS= 0 V
f= 1 .0 M H Z

ns

pF

S o ur c e -D ra i n D i o d e
D i o d e F o rwa rd Vo lta g e

V SD

IS=200mA , VGS=0V

0.82

1.3

C o nti nuo us D i o d e F o rwa r d C urr e nt

IS

300

mA

P uls e D i o d e F o r wa rd C ur re nt

IS M

2000

mA

VDD

Switching
Test Circuit
VIN

VDD

Gate Charge
Test Circuit

RL

VGS

RL

VOUT
RG

1mA

RG

October 29,2010-REV.02

PAGE . 2

2N7002K
O

Typical Characteristics Curves (TA=25 C,unless otherwise noted)

1.2

V GS= 6.0~10V

5.0V

1
0.8

4.0V

0.6
0.4
0.2

3.0V

0
0

ID - Drain Source Current (A)

ID - Drain-to-Source Current (A)

1.2

VDS =10V

1
0.8
0.6
0.4
0.2

25oC

0
0

VDS - Drain-to-Source Voltage (V)

FIG.2- Transfer Characteristic

5

RDS(ON) - On-Resistance ( W )

RDS(ON) - On-Resistance ( W )

VGS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL
FORWARD
CHARACTERISTIC
FIG.1- Output
Characteristic

4
3
V GS = 4.5V

2
1

V GS=10V

4
3
ID =500mA

2
ID =200mA

1
0

0.2

0.4

0.6

0.8

FIG.3- On Resistance vs Drain Current

1.8
1.6

10

V GS - Gate-to-Source Voltage (V)

ID - Drain Current (A)

RDS(ON) - On-Resistance(Normalized)

FIG.4- On Resistance vs Gate to Source Voltage

VGS =10V
ID =500mA

1.4
1.2
1
0.8
0.6
-50

-25

25

50

75

100

125

150

TJ - Junction Temperature ( C)

FIG.5- On Resistance vs Junction Temperature

October 29,2010-REV.02

PAGE . 3

2N7002K

V GS - Gate-to-Source Voltage (V)

10

Vgs

Qg

Qsw

Vgs(th)

6
4
2
0

Qg(th)
Qgs

Qg

Qgd

VDS=10V
ID =250mA

0.2

1
0.9
0.8

25

50

75

100

125

88

BVDSS - Breakdown Voltage (V)

Vth - G-S Th r esh o l d Vo l tag e (NORMA L IZED)

1.1

-25

86
84
82
80
78
76
74

72
-50

150

-25

C - Capacitance (pF)

IS - Source Current (A)

75

100

-55oC

25oC
0.6

0.8

1.4

150

50
40
30
Ciss

20
Coss

10

1.2

125

f = 1MHz
V GS = 0V

60

0.1

1.6

VSD - Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

October 29,2010-REV.02

50

70

0.4

25

Fig.9 - Breakdown Voltage vs Junction Temperature

VGS = 0V

0.01
0.2

TJ - Junction Temperature ( o C)

Fig.8 - Threshold Voltage vs Temperature

TJ = 125oC

ID = 250 m A

TJ - Junction Temperature ( C)

10

0.8

Fig.7 - Gate Charge

ID =250 m A

0.7
-50

0.6

Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform

1.2

0.4

Crss

0
0

10

15

20

25

VDS - Drain-to-Source Voltage (V)

Fig.11 - Capacitance vs Drain to Source Voltage

PAGE . 4

2N7002K
MOUNTING PAD LAYOUT

SOT-23
0.035 MIN.
(0.90) MIN.

Unitinch(mm)

0.078
(2.00)

0.037
(0.95)

0.043
(1.10)

0.031 MIN.
(0.80) MIN.

0.043
(1.10)
0.106
(2.70)

ORDER INFORMATION
Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7 plastic Reel

October 29,2010-REV.02

PAGE . 5

2N7002K
Part No_packing code_Version
2N7002K_R1_00001
2N7002K_R2_00001

For example :
RB500V-40_R2_00001
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R

Part No.

Packing Code XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING

October 29,2010-REV.02

Version Code XXXXX

1st Code

Packing size code

N/A

HF

serial number

7"

RoHS

serial number

13"

26mm

52mm

L
F

PANASERT T/B CATHODE UP

(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)

2nd Code HF or RoHS 1st Code 2nd~5th Code

U
D

PAGE . 6

2N7002K
Disclaimer

Reproducing and modifying information of the document is prohibited without permission

from Panjit International Inc..

Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.

Panjit International Inc. disclaims any and all liability arising out of the application or use of
any product including damages incidentally and consequentially occurred.

Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.

Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.

Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.

The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.

Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.

October 29,2010-REV.02

PAGE . 7