VALLIAMMAI ENGINEERING COLLEGE

SRM NAGAR, KATTANKULATHUR 603 203.

DEPARTMENT

OF ELECTRONICS AND COMMUNICATION

ENGINEERING

EC2403 - RF AND MICROWAVE ENGINEERING

QUESTION BANK
IV - YEAR / VII - SEMESTER
ACADEMIC YEAR: 2015-2016 ODD SEMESTER

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EC2403

RF AND MICROWAVE ENGINEERING

LTPC

3 0 0 3

9
Low frequency parameters-impedance, admittance, hybrid and ABCD. High frequency
parameters-Formulation of S parameters, properties of S parameters-Reciprocal and lossless
networks, transmission matrix, Introduction to component basics, wire, resistor, capacitor
and inductor, applications of RF.
UNIT I

TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION

UNIT II
RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9
Amplifier power relation, stability considerations, gain considerations noise figure,
impedance matching networks, frequency response, T and matching networks,
microstripline matching networks.

9
Microwave frequency range, significance of microwave frequency range - applications of
microwaves. Scattering matrix -Concept of N port scattering matrix representationProperties of S matrix- S matrix formulation of two-port junction. Microwave junctions Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers two hole directional couplers- Ferrites - important microwave properties and applications
Termination - Gyrator- Isolator-Circulator - Attenuator - Phase changer S Matrix for
microwave components Cylindrical cavity resonators.
UNIT III

MICROWAVE PASSIVE COMPONENTS

9
Microwave semiconductor devices- operation - characteristics and application of BJTs and
FETs -Principles of tunnel diodes - Varactor and Step recovery diodes Transferred
Electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT and TRAPATT
devices. Parametric devices -Principles of operation - applications of parametric amplifier
.Microwave monolithic integrated circuit (MMIC) - Materials and fabrication techniques.
UNIT IV

MICROWAVE SEMICONDUCTOR DEVICES

9
Microwave tubes- High frequency limitations - Principle of operation of Multicavity
Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron. Microwave measurements:
Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.
UNIT V

MICROWAVE TUBES AND MEASUREMENTS

TEXT BOOKS:
1. Samuel Y Liao, Microwave Devices & Circuits , Prentice Hall of India, 2006.
2. Reinhold.Ludwig and Pavel Bretshko RF Circuit Design, Pearson Education, Inc.,2006
REFERENCES:
1. Robert. E.Collin-Foundation of Microwave Engg Mc Graw Hill.
2. Annapurna Das and Sisir K Das, Microwave Engineering, Tata Mc Graw Hill, 2004.
3. M.M.Radmanesh , RF & Microwave Electronics Illustrated, Pearson Education, 2007.
4. Robert E.Colin, 2ed Foundations for Microwave Engineering, McGraw Hill, 2001
5. D.M.Pozar, Microwave Engineering., John Wiley & sons, Inc., 2006.
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UNIT I
TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION
PART-A
1.
2.
3.
4.
5.
6.
7.

Name the Low Frequency parameters.

What is the need for S-parameters?
Draw the equivalent circuit of a practical capacitor and inductor.
Give the application of Thin-film chip resistors.
List the properties of S- parameters.
Write the equation for VSWR at port 1 in terms of S11.
Define Reflection Co-efficient at the input side and output side of a two-port network
in terms of S-parameters.
8. A 5dB attenuator is specified as having VSWR of 1.2. Assuming the device is
reciprocal, find the S-parameters.
9. Draw the electric equivalent circuit for a high frequency inductor.
10. What are the advantages of scattering parameters?
11. Define reciprocal and symmetrical networks.
12. Mention the limitations in measuring Z, Y and ABCD parameter at
microwave frequencies.
13. State the principal advantage of microwave frequencies over lower frequency.
14. Define lossless network.
15. What is insertion loss?
16. What is transmission loss in terms of S-parameters?
17. Give four applications of RF.
18. What is reflection loss?
19. What is return loss of a two-port network?
20. Explain the transmission matrix and its advantages.
PART-B
1. Write a detailed note on a) impedance and admittance b)hybrid and ABCD
parameters
2. Write the need for S-parameters and define S-parameters for a two port network with
expression of losses.
3. Formulate the S matrix for
RF.

n-port network and explain in detail the applications of

4. Explain the transmission matrix for two port networks and Explain the transmission
matrix for cascade connection of two-port networks.
5. What are transmission matrices? Explain them and obtain the relationship With SMatrix.
6. Explain all the properties of S-parameters and explain the limitations of use of low
frequency components for RF/MW frequencies.
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7. Write Short notes on High Frequency wires, resistors, inductors & capacitors.
8. The s parameters of two port network are given by
S11=0.2 90, S22= 0.2 90, S12=0.5 0& S21=0.5 0
a) Determine whether the network is lossy or not?
b) Is the network symmetrical and reciprocal? Find the insertion loss of the
network.
9. a) A shunt impedance Z is connected across a transmission line with characteristic
impedance Z0. Find the S-matrix of the junction.
b) Two transmission lines of characteristic impedance Z1 and Z2 are
joined at plane PP. Express S-parameters in terms of impedances when
each line is matched terminated.

10. The S parameters of a two port network are given by

S11=0.2 0, S22= 0.1 0, S12=0.6 90& S21=0.6 90
a) Prove that the network is reciprocal but not lossless.
b) Find the return loss at port1 when port 2 is short circuited.

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UNIT-2
RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS
PART-A
1. What are the components required for impedance matching at low, mid and high
frequencies.
2. Define forward current gain and reverse voltage gain
3. What are the considerations in selecting the matching network?
4. Name two noise parameters.
5. What is the purpose of a matching network and smith chart?
6. What is the main drawback of a single stub matching network?
7. What are basic steps in the design process of RF amplifier circuits?
8. Define power gain of amplifier in terms of S-parameters and reflection coefficient.
9. Draw the diagram for stabilization of input port through series resistance and shunt
conductance.
10. Name the four adjustable parameters for matching networks.
11. Write the expression for noise figure of a two port amplifier.
12. Distinguish between conditional and unconditional stabilities of amplifier
13. Why impedance matching is required. What are the other constrains required.
14. What are the parameters used to evaluate the performance w0f an amplifier?
15. Write short notes on feedback of RF circuit.
16. Define unilateral power gain and Noise Figure
17. Write the function of matching networks
18. Write expression for nodal quality factor with loaded quality factor.
19. Draw typical output stability circle and input stability circle
20. Define transducer power gain.
PART-B
1. i) Derive the expression for input and output stability circle equation.
ii) Derive the frequency dependent unilateral figure of merit equation.
2. i) Explain the design of matching network involving transmission line sections (TL) and
discrete capacitive elements.
ii) Explain about single stub Matching networks
3. Explain the following
(i) Impedance matching Networks
(ii) Microstripline Matching Networks

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4. Derive the derivations for power gain, available gain and transducer gain of a microwave
amplifier using S-parameters.
5. Explain stability considerations for RF amplifier design with stabilization methods.

6. The S-parameters for a transistor is given below. Determine its stability and draw the input
and output stability circles (use smith chart).
S11=0.385-53degree, S12=0.04590degree, S12=2.778degree and
S22=0.89-26.5degree.
7. (i) What is a matching network? Why is this required?
(ii)Design a lumped element LC network for matching ZL=10+j10 to a 50 transmission
line at 1 GHz.
8. Derive the transducer power gain for a transistor amplifier. Design LC network to match
source impedance Zs=50+j25 to the load ZL=25-j50.Assume Zo=50 ; f=2GHz. use
smith chart.
9. Discuss the smith chart approach to design the L-section and T-section matching
Networks.
10. Draw the double stub matching network and explain it in detail.

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UNIT -3
MICROWAVE PASSIVE COMPONENTS
PART-A
1.
2.
3.
4.
5.
6.
7.
8.

Give the significance of Rat- race junctions.

What is matched termination and its uses?
Define Directivity and coupling factor of Directional coupler.
Name the semiconductors used in the Gunn diode.
What are waveguide corners, bends and twists?
What is the minimum radius of curvature for the waveguide bends?
What are the basic types of directional couplers?
What are the basic parameters to measure the performance of a
Directional Coupler?
9. A waveguide termination having VSWR of 1.1 is used to dissipate 100
W of Power. Find the reflected power?
10. What are the differences between Gyrator and phase changer?
11. What is a cylindrical cavity resonator?
12. Draw the diagram of H-plane and E-plane Tee junction.
13. A directional coupler is having coupling factor of 20dB and directivity of 40dB. If the
incident power is 100mW, what is the coupled power?
14. Define the Q factor of a cavity resonator.
15. Power at the input port is 900mw. If the power is incident on 20dB coupler with
directivity 40dB, what is the coupled power and transmitted power.
16. Why is a magic tee referred to as E-H tee?
17. Define sum and difference arm
18. Define isolator and circulator
19. What do you mean by Faraday rotation?
20. Write the types of ferrite devices, Reciprocal, and non-reciprocal devices.
PART-B
1. i) What is a hybrid ring? With the help of a neat diagram explain its working principle.
ii) Derive Scattering matrix of E-plane Tee using S-parameter theory.
2. From the first principles derive the Scattering matrix of an ideal Directional Coupler.
3.i) Derive Scattering matrix of H-plane Tee using S-parameter theory.
ii). Explain the function of an isolator and circulator.
4.Derive scattering matrix for Hybrid Tee using S parameter theory.
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5.i) Differentiate between circulator and isolator.

ii) With neat diagram, explain waveguide corners, twists and bends.
6.i) Explain the properties of ferrites.
ii) A 20mw signal is fed into one of collinear port1 of a lossless H plane junction.
Calculate the power delivered through each port when other ports are terminated in
matched load.
7.i) Explain the construction of Magic Tee and derive its S-matrix.
ii) How can an isolator be designed using 3 port circulator?
8. i)Describe the principle of microwave transmission through ferrite and explain how a
Gyrator is designed based on this effect.
ii) Explain the properties of E-plane Tee and H-plane Tee.
9.Explain in detail the operation of Cylindrical cavity resonator
10. With neat diagram explain the operation of attenuator and phase shifter.

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UNIT-4
MICROWAVE SEMICONDUCTOR DEVICES
PART-A
1. Why are FETs preferred to bipolar transistor at high frequencies?
2. What is Transferred electron effect?
3. Draw the symbol of Varactor diode.
4. What is step recovery diode?
5. Compare tunnel diode and normal PN diode.
6. What is Gunn diode and list the modes.
7. What is Transferred electron effect?
8. What do the acronyms IMPATT, TRAPATT and BARITT stand for?
9. List out the advantages of MMICs.
10. Distinguish between hybrid and monolithic MIC.
11. What is the main advantage of TRAPATT over IMPATT?
12. What are the applications of Tunnel Diode?
13. List the various types of Striplines used in MMIC.
14. Mention the ideal characteristics of dielectric material in MMIC.
15. What are the substrate materials used in MMICs?
16. Draw the voltage waveforms of TRAPATT diode.
17. What are the advantages of parametric amplifiers?
18. What are the fabrication techniques in MMIC
19. What are the factors reducing the efficiency of IMPATT diode?
20. What are the applications of TRAPATT devices?
PART-B
1. i) Draw the equivalent circuit of Gunn diode and explain its Construction.
ii) With neat diagram explain the construction and operating principle of Tunnel
diode.
2. i) Describe the four types of materials used in MMIC fabrication.
ii) Explain the steps involved in MMIC fabrication process.
3. i) Distinguish between IMPATT, TRAPATT and BARITT diodes.
ii) List the advantages and limitations of parametric amplifiers.

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4. Describe the principle of operation and the circuit performance of Parametric up

and down converter.
5. Explain the principle of operation of MESFET with necessary curves and
Diagrams.
6. i) Compare the different types of avalanche transit time diodes.
ii) Explain the construction and working of HEMTs with a neat diagram.
7. With the help of two valley theory, explain how negative resistance is created in Gunn diodes
8. i) Explain the structure and operation of JFET.
ii) Explain the construction and working of Varactor diode with a neat diagram.
9. Explain the operation of MOSFET with neat diagram and characteristic curves.
10. With neat diagrams, explain the operation of Tunnel diode and Varactor diode.

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UNIT-5
MICROWAVE TUBES AND MEASUREMENTS
PART-A
1. What is Transferred electron effect?
2. Compare TWTA and Klystron Amplifier.
3. Mention two methods to measure Impedance.
4. What are Cross field tubes?
5. What is velocity modulation?
6. State any four high frequency limitations.
7. Name two sensors used for microwave power measurement.
8. Define density modulation?
9. Name the possible errors in VSWR measurements.
10. How to measure Q?
11. Why Magnetron is called as crossed field device?
12. Give the drawbacks of klystron amplifiers.
13. What is the condition for oscillation in Reflex Klystron?
14. What are the applications of reflex klystron?
15. What is the purpose of slow wave structures in TWT?
16. What is Hull cutoff condition?
17. .Differentiate baretter and thermistor?
18. List the different types of Impedance measurement methods?
19. How will you determine the VSWR and return loss in reflecto-meter method.
20. What is the main purpose of slotted section with line carriage?
PART-B
1. Explain the oscillation mechanism and the electron trajectory concept of Magnetron
oscillator.
2. Explain LOW VSWR and HIGH VSWR measurement method.
3. With the applegate diagram, describe the mechanism of operation of two cavity
klystron Amplifier.
4. Write notes on the following:
i)Measurement of power.
ii)Measurement of Q and phase shift.
5. Explain the principle of operation of Reflex Klystron Oscillator with
a neat diagram.
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6. With the applegate diagram, describe the mechanism of operation of TWT amplifier
and derive the expression for the gain of a TWT.
7. Draw the block diagram for the slotted line method of VSWR Measurement and explain.

8. Explain how the microwave Impedance is determined experimentally.

9.

A reflex klystron is operated at 5 GHz with dc beam voltage 1000V, beam current
20mA, repeller space L cm for 1 mode, cavity gap 2mm, repeller voltage 500V.
Calculate optimum repeller space, RF power output, efficiency and the b a n d w i d t h
over VR = 1V.

10. For a TWT, Io = 300mA , Vo=5kV and the impedance of the helix is 30.Find the
length l of the helix that will give a gain of 60dB at 9GHz.

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