AP4506GEM

RoHS-compliant Product

Advanced Power
Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

Simple Drive Requirement

N-CH BVDSS

D2
D2

Low On-resistance

D1

RDS(ON)

D1

Fast Switching Performance

30m

ID

G2

6.4A

P-CH BVDSS

S2

SO-8

30V

G1
S1

-30V

RDS(ON)

40m

ID

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and costeffectiveness.

-6A

D1
G1

D2
G2

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters.

S1

S2

Absolute Maximum Ratings

Symbol

Parameter

Rating
N-channel

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25
ID@TA=70

Units

P-channel

30

-30

+20

+20

Continuous Drain Current

6.4

-6.0

Continuous Drain Current

5.1

-4.8

30

-30

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

2.0

Thermal Data
Symbol
Rthj-a

Parameter
3

Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

Value

Unit

62.5

/W

1
200902103

AP4506GEM
o

N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)

Symbol
BVDSS
RDS(ON)

Parameter

Test Conditions

Drain-Source Breakdown Voltage

Min.

Typ.

30

VGS=10V, ID=6A

30

VGS=4.5V, ID=4A

36

VGS=0V, ID=250uA

Static Drain-Source On-Resistance

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=6A

17

IDSS

Drain-Source Leakage Current

VDS=24V, VGS=0V

uA

Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V

25

uA

Gate-Source Leakage

VGS=+20V, VDS=0V

+30

uA

ID=6A

8.3

13

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=24V

1.5

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

nC

td(on)

Turn-on Delay Time

VDS=15V

ns

tr

Rise Time

ID=1A

5.6

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=10V

17

ns

tf

Fall Time

RD=15

3.6

ns

Ciss

Input Capacitance

VGS=0V

575

920

pF

Coss

Output Capacitance

VDS=25V

100

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

70

pF

Min.

Typ.

IS=1.5A, VGS=0V

1.3

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=6A, VGS=0V

19

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

14

nC

AP4506GEM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)

Parameter

Test Conditions

Drain-Source Breakdown Voltage

Min.

Typ.

-30

VGS=-10V, ID=-5A

40

VGS=-4.5V, ID=-3A

52

VGS=0V, ID=-250uA

Static Drain-Source On-Resistance

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-5A

12

IDSS

Drain-Source Leakage Current

VDS=-24V, VGS=0V

-1

uA

Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V

-25

uA

Gate-Source Leakage

VGS=+20V, VDS=0V

+30

uA

ID=-5A

12.6

20

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=-24V

2.4

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

6.2

nC

td(on)

Turn-on Delay Time

VDS=-15V

ns

tr

Rise Time

ID=-1A

5.6

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=-10V

24

ns

tf

Fall Time

RD=15

35

ns

Ciss

Input Capacitance

VGS=0V

1045 1670

pF

Coss

Output Capacitance

VDS=-20V

220

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

150

pF

Min.

Typ.

IS=-1.5A, VGS=0V

-1.3

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=-5A, VGS=0V

23

ns

Qrr

Reverse Recovery Charge

dI/dt=-100A/s

15

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2

3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP4506GEM
N-Channel
30

30

10V
7.0V
5.0V
4.5V

ID , Drain Current (A)

20

V G =3.0V

10

20

V G =3.0V

10

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

28

1.8

ID=6A
V G =10V

ID=4A
26

T A =25 o C

1.6

Normalized RDS(ON)

RDS(ON) (m)

10V
7.0V
5.0V
4.5V

T A = 150 C
ID , Drain Current (A)

T A = 25 C

24

22

1.4

1.2

20

1.0
18

0.8

16
2

25

10

50

75

100

125

150

T j , Junction Temperature ( o C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

10

1.6

Normalized VGS(th) (V)

IS(A)

T j =150 o C

T j =25 o C

1.2

0.8

0.4

0
0

0.2

0.4

0.6

0.8

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
4

AP4506GEM
N-Channel
f=1.0MHz
1000

C iss

I D =6A
V DS =24V
8

C (pF)

VGS , Gate to Source Voltage (V)

12

C oss

100

C rss
4

10

0
0

10

15

20

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

17

21

25

29

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthja)

100

10

100us
ID (A)

13

V DS , Drain-to-Source Voltage (V)

1ms
1

10ms
100ms
0.1

1s
T A =25 o C
Single Pulse

DC

0.01

Duty factor=0.5

0.2

0.1

0.1
0.05

PDM

t
0.02

0.01

Duty factor = t/T

Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W

Single Pulse

0.01

0.1

10

100

0.001

0.01

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

VDS

0.1

10

100

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

90%

QG
4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform

AP4506GEM
P-Channel
30

30

-10V
-7.0V
-5.0V
-4.5V

-ID , Drain Current (A)

20

V G = - 3.0V

10

20

V G = - 3.0V

10

0
0

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

44

1.6

I D = -5A
V G = -10V

I D = -3 A
T A = 25 o C

1.4

Normalized RDS(ON)

40

RDS(ON) (m)

-10V
-7.0V
-5.0V
-4.5V

T A = 150 C
-ID , Drain Current (A)

T A = 25 C

36

32

1.2

1.0

0.8

28

0.6

24
2

-50

10

50

100

150

-V GS ,Gate-to-Source Voltage (V)

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

10

1.6

Normalized -VGS(th) (V)

-IS(A)

T j =150 o C

T j =25 o C

1.2

0.8

0.4
0

0.2

0.4

0.6

0.8

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

-50

50

100

150

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
6

AP4506GEM
P-Channel
f=1.0MHz

10000

I D = -5 A
V DS = -24 V

C iss

1000

C (pF)

-VGS , Gate to Source Voltage (V)

12

C oss
C rss
100

10

0
0

10

20

30

Fig 7. Gate Charge Characteristics

13

17

21

25

29

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthja)

100

100us

10

1ms
-ID (A)

-V DS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

10ms

100ms
1s

0.1

T c =25 C
Single Pulse

DC

Duty factor=0.5

0.2

0.1

0.1

0.05

PDM

t
0.02

0.01

Duty factor = t/T

Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W

Single Pulse

0.01

0.01

0.1

10

100

0.001

0.01

-V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

0.1

10

100

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG

-4.5V

QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform