IRF830

IRF830, SiHF830
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
Dynamic dV/dt Rating
500
RDS(on) ()
VGS = 10 V
RoHS*
Qg (Max.) (nC)
38
Fast Switching
Qgs (nC)
5.0
Ease of Paralleling
22
Simple Drive Requirements
Qgd (nC)
Configuration
Single
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
COMPLIANT
Compliant to RoHS Directive 2002/95/EC

D
Available
Repetitive Avalanche Rated
1.5
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF830PbF
SiHF830-E3
IRF830
SiHF830
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
20
Continuous Drain Current
VGS at 10 V
TC = 25 C
TC = 100 C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor

Single Pulse Avalanche
Energyb
UNIT
V
4.5
2.9
18
0.59
W/C
mJ
EAS
280
Repetitive Avalanche Currenta
IAR
4.5
Repetitive Avalanche Energya
EAR
7.4
mJ
Maximum Power Dissipation
TC = 25 C
Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
74
dV/dt
3.5
V/ns
TJ, Tstg
- 55 to + 150
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).
c. ISD 4.5 A, dI/dt 75 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF830, SiHF830
Vishay Siliconix
THERMAL RESISTANCE RATINGS

PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
Maximum Junction-to-Case (Drain)
RthJC
1.7
UNIT
C/W
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 A
500
VDS/TJ
Reference to 25 C, ID = 1 mA
0.61
V/C
VGS(th)
VDS = VGS, ID = 250 A
2.0
4.0
Gate-Source Leakage
IGSS
VGS = 20 V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
25
VDS = 400 V, VGS = 0 V, TJ = 125 C
250
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
1.5
gfs
VDS = 50 V, ID = 2.7 Ab
2.5
Input Capacitance
Ciss
VGS = 0 V,
610
Output Capacitance
Coss
VDS = 25 V,
160
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
68
Total Gate Charge
Qg
38
5.0
Drain-Source On-State Resistance

Forward Transconductance
RDS(on)
ID = 2.7 Ab
VGS = 10 V
Dynamic
VGS = 10 V
ID = 3.1 A, VDS = 400 V,
pF
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
22
Turn-On Delay Time
td(on)
8.2
VDD = 250 V, ID = 3.1 A
16
Rg = 12 , RD = 79, see fig. 10b
42
16
4.5
7.5
4.5
18
1.6
320
640
ns
1.0
2.0
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
see fig. 6 and 13b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
nC
ns
nH
Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
A
G
TJ = 25 C, IS = 4.5 A, VGS = 0 Vb
TJ = 25 C, IF = 3.1 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com
2

S11-0506-Rev. B, 21-Mar-11

IRF830, SiHF830
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
Top
4.5 V
150 C
ID, Drain Current (A)
101
25 C
100
10-1
20 s Pulse Width
TC = 25 C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
91063_01
20 s Pulse Width
TC = 150 C
10-1
100
91063_02
4.5 V
101
Fig. 2 - Typical Output Characteristics, TC = 150 C

S11-0506-Rev. B, 21-Mar-11
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance

(Normalized)
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
VGS, Gate-to-Source Voltage (V)
91063_03
Fig. 1 - Typical Output Characteristics, TC = 25 C
101
20 s Pulse Width
VDS = 50 V
91063_04
3.0
2.5
ID = 3.1 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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3

IRF830, SiHF830
Vishay Siliconix
1500
Capacitance (pF)
1250
1000
Ciss
750
101
ISD, Reverse Drain Current (A)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
500
Coss
250
150 C
25 C
100
VGS = 0 V
Crss
0
100
0.4
101
91063_05
VDS = 400 V
Operation in this area limited

by RDS(on)
VGS, Gate-to-Source Voltage (V)
102
5
VDS = 250 V
12
VDS = 100 V
10 s
10
5
100 s
1 ms
1
5
10 ms
0.1
For test circuit

see figure 13
0
0
91063_06
16
24
32
40
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
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4
1.2
1.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 3.1 A
16
0.8
VSD, Source-to-Drain Voltage (V)
91063_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
0.6
TC = 25 C
TJ = 150 C
Single Pulse
10-2
0.1
91063_08
10
102
103
104

Fig. 8 - Maximum Safe Operating Area

S11-0506-Rev. B, 21-Mar-11

IRF830, SiHF830
Vishay Siliconix
RD
VDS
VGS
5.0
D.U.T.
RG
+
- VDD
4.0
10 V
Pulse width 1 s
Duty factor 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
1.0
VDS
90 %
0.0
25
50
75
100
125
150
TC, Case Temperature (C)
91063_09
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
0 - 0.5
0.2
0.1
PDM
0.1
0.05
10-2
10-5
91063_11
t1
Single Pulse
(Thermal Response)
0.02
0.01
10-4
10-3
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
0.1
10
t1, Rectangular Pulse Duration (S)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S11-0506-Rev. B, 21-Mar-11
www.vishay.com
5

IRF830, SiHF830
Vishay Siliconix
L
Vary tp to obtain
required IAS
V(BR)DSS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
VDS
10 V
0.01
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
600
ID
2.0 A
2.8 A
Bottom 4.5 A
Top
500
400
300
200
100
VDD = 50 V
25
91063_12c
50
75
100
125
150
Starting TJ, Junction Temperature (C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
QG
10 V
12 V
0.2 F
0.3 F
QGS
QGD
D.U.T.
VG
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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6
Fig. 13b - Gate Charge Test Circuit

S11-0506-Rev. B, 21-Mar-11

IRF830, SiHF830
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit

+
D.U.T.
Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test
+
-
VDD
Driver gate drive

P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform

Reverse
recovery
current
Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91063.

S11-0506-Rev. B, 21-Mar-11
www.vishay.com
7

Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
MILLIMETERS
H(1)
L(1)
M*
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
4.14
4.70
0.163
0.185
0.69
1.02
0.027
0.040
b(1)
1.14
1.73
0.045
0.068
0.36
0.61
0.014
0.024
14.33
15.85
0.564
0.624
9.96
10.52
0.392
0.414
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
0.43
1.40
0.017
0.055
H(1)
6.10
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
3.53
3.94
0.139
0.155
2.59
3.00
0.102
0.118
ECN: X15-0003-Rev. A, 19-Jan-15

DWG: 6031
Notes
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
Outline conforms to JEDEC outline TO-220AB with exception
of dimension F
C
b
e
J(1)
e(1)

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 19-Jan-15
Legal Disclaimer Notice

www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12

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IRF830, SiHF830

Dynamic dV/dt Rating

Simple Drive Requirements

Third generation Power MOSFETs from Vishay provide the

Compliant to RoHS Directive 2002/95/EC

Repetitive Avalanche Rated

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

* Pb containing terminations are not RoHS compliant, exemptions may apply

This datasheet is subject to change without notice.

THERMAL RESISTANCE RATINGS

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

VDS = VGS, ID = 250 A

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, VGS = 0 V, TJ = 125 C

Reverse Transfer Capacitance

f = 1.0 MHz, see fig. 5

Total Gate Charge

Drain-Source On-State Resistance

ID = 3.1 A, VDS = 400 V,

Turn-On Delay Time

VDD = 250 V, ID = 3.1 A

Rg = 12 , RD = 79, see fig. 10b

see fig. 6 and 13b

Internal Drain Inductance

Internal Source Inductance

Drain-Source Body Diode Characteristics

Pulsed Diode Forward Currenta

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Document Number: 91063

This datasheet is subject to change without notice.

ID, Drain Current (A)

ID, Drain Current (A)

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 C

Document Number: 91063

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

ISD, Reverse Drain Current (A)

VDS, Drain-to-Source Voltage (V)

Operation in this area limited

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)