DISCRETE SEMICONDUCTORS

DATA SHEET
handbook, halfpage

M3D109

BZV49 series
Voltage regulator diodes
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01

1996 Apr 26

Philips Semiconductors

Product specification

Voltage regulator diodes

FEATURES

BZV49 series

PINNING

Total power dissipation:

max. 1000 mW

PIN

Tolerance series: 5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)

DESCRIPTION

anode

anode

cathode

Non-repetitive peak reverse power

dissipation: max. 40 W.
handbook, halfpage

APPLICATIONS
General regulation functions.
2

DESCRIPTION
Medium-power voltage regulator
diodes in a plastic SMD SOT89
package.

3
1

The diodes are available in the

normalized E24 5% tolerance range.
The series consists of 37 types with
nominal working voltages from
2.4 to 75 V (BZV49-C2V4 to
BZV49-C75).

Bottom view

MAM244

Fig.1 Simplified outline (SOT89) and symbol.

MARKING
TYPE
NUMBER

MARKING
CODE

MARKING
CODE

TYPE
NUMBER

MARKING
CODE

BZV49-C2V4

2Y4

BZV49-C6V2

6Y2

BZV49-C16

16Y

BZV49-C43

43Y

BZV49-C2V7

2Y7

BZV49-C6V8

BZV49-C3V0

3Y0

BZV49-C7V5

6Y8

BZV49-C18

18Y

BZV49-C47

47Y

7Y5

BZV49-C20

20Y

BZV49-C51

51Y

BZV49-C3Y3

3Y3

BZV49-C8V2

8Y2

BZV49-C22

22Y

BZV49-C56

56Y

BZV49-C3V6
BZV49-C3V9

3Y6

BZV49-C9V1

9Y1

BZV49-C24

24Y

BZV49-C62

62Y

3Y9

BZV49-C10

10Y

BZV49-C27

27Y

BZV49-C68

68Y

BZV49-C4V3

4Y3

BZV49-C11

11Y

BZV49-C30

30Y

BZV49-C75

75Y

BZV49-C4V7

4Y7

BZV49-C12

12Y

BZV49-C33

33Y

BZV49-C5V1

5Y1

BZV49-C13

13Y

BZV49-C36

36Y

BZV49-C5V6

5Y6

BZV49-C15

15Y

BZV49-C39

39Y

1996 Apr 26

TYPE
NUMBER

MARKING
CODE

TYPE
NUMBER

Philips Semiconductors

Product specification

Voltage regulator diodes

BZV49 series

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

IF

continuous forward current

IZSM

non-repetitive peak reverse current

tp = 100 s; square wave;

Tj = 25 C prior to surge

MIN.

MAX.

250

UNIT
mA

see Table
Per type

Ptot

total power dissipation

Tamb = 25 C; note 1

1000

PZSM

non-repetitive peak reverse power

dissipation

tp = 100 s; square wave;

Tj = 25 C prior to surge; see Fig.2

40

Tstg

storage temperature

65

+150

Tj

junction temperature

150

MIN.

MAX.

1.0

mW

Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 C; unless otherwise specified.
SYMBOL
VF

1996 Apr 26

PARAMETER
forward voltage

CONDITIONS
IF = 50 mA; see Fig.3

UNIT
V

1996 Apr 26

2.9

3.2

3.5

3.8

4.1

4.6

5.0

2.5

2.8

3.1

3.4

3.7

4.0

4.4

2V7

3V0

3V3

3V6

3V9

4V3

4V7

5.4

6.0

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

4.8

5.2

5.8

6.4

7.0

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

5V1

5V6

6V2

6V8

7V5

8V2

9V1

10

11

12

13

15

16

18

20

15

10

10

10

55

45

40

30

30

25

20

20

15

15

15

15

10

40

60

80

90

90

90

95

95

100

100
2.1
2.4
2.4
2.5
2.5
1.4
0.8
1.2

3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.0

14.4

12.4

10.4

9.2

7.0

6.0

5.4

4.5

3.8

3.2

2.5

1.2

16.4

14.4

12.4

11.4

9.4

8.4

7.4

6.4

5.5

4.6

4.0

3.0

2.3

2.0

3.5

0.4

1.6

3.5

18.0

16.0

14.0

13.0

11.0

10.0

9.0

8.0

7.0

6.2

5.3

4.5

3.7

2.5

1.2

0.2

TYP. MAX.

MIN.

TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5

TEST
CURRENT
IZtest (mA)

60

70

75

75

80

85

85

90

90

95

100

110

130

140

160

180

450

450

450

450

450

450

450

MAX.

DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V

0.05

0.05

0.05

0.05

0.1

0.1

0.1

0.2

0.5

0.7

10

20

50

MAX.

IR (A)

14.0

12.6

11.2

10.5

8.0

8.0

8.0

7.0

6.0

5.0

5.0

4.0

4.0

2.0

2.0

2.0

1.0

1.0

1.0

1.0

1.0

1.0

1.0

VR
(V)

REVERSE
CURRENT at
REVERSE
VOLTAGE

1.5

1.5

1.5

2.0

2.5

2.5

2.5

3.0

3.0

4.0

4.0

6.0

6.0

6.0

6.0

6.0

6.0

6.0

6.0

6.0

6.0

6.0

6.0

MAX.

NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 s;
Tamb = 25 C

Voltage regulator diodes

10

10

10

15

40

50

80

85

85

85

80

75

70

2.6

2.2

2V4

MAX.

TYP.

MAX.

MIN.

BZV49CXXX

DIFFERENTIAL
RESISTANCE
rdif ()
at IZtest

WORKING
VOLTAGE
VZ (V)
at IZtest

Per type
Tj = 25 C; unless otherwise specified.

Philips Semiconductors
Product specification

BZV49 series

1996 Apr 26

25.1

28.0

31.0

34.0

37.0

40.0

44.0

48.0

52.0

58.0

64.0

70.0

27

30

33

36

39

43

47

51

56

62

68

75

79.0

72.0

66.0

60.0

54.0

50.0

46.0

41.0

38.0

35.0

32.0

28.9

25.6

22.8

24

95

90

80

70

60

50

45

40

35

35

30

25

25

20

23.3

20.8

22

255

240

215

200

180

170

150

130

90

80

80

80

70

55

MAX.

TYP.

MAX.

MIN.

BZV49CXXX

DIFFERENTIAL
RESISTANCE
rdif ()
at IZtest

WORKING
VOLTAGE
VZ (V)
at IZtest

73.4

65.6

58.8

52.2

46.6

42.0

37.6

33.4

30.4

27.4

24.4

21.4

18.4

16.4

MIN.

80.2

71.7

64.4

57.0

51.0

46.1

41.2

36.4

33.0

29.7

26.6

23.4

20.4

18.4

88.6

79.8

71.6

63.8

57.2

51.8

46.6

41.2

37.4

33.4

29.4

25.3

22.0

20.0

TYP. MAX.

TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5

TEST
CURRENT
IZtest (mA)

35

35

35

40

40

40

40

45

45

45

50

50

55

60

MAX.

DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

0.05

MAX.

IR (A)

52.5

47.6

43.4

39.2

35.7

32.9

30.1

27.3

25.2

23.1

21.0

18.9

16.8

15.4

VR
(V)

REVERSE
CURRENT at
REVERSE
VOLTAGE

0.2

0.25

0.3

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.0

1.25

1.25

MAX.

NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 s;
Tamb = 25 C

Philips Semiconductors
Product specification

Voltage regulator diodes

BZV49 series

Philips Semiconductors

Product specification

Voltage regulator diodes

BZV49 series

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

Rth j-tp

thermal resistance from junction to tie-point

Rth j-a

thermal resistance from junction to ambient

CONDITIONS
note 1

Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.

1996 Apr 26

VALUE

UNIT

15

K/W

125

K/W

Philips Semiconductors

Product specification

Voltage regulator diodes

BZV49 series

GRAPHICAL DATA
MBG781

MBG801

103
handbook, halfpage

300

handbook, halfpage

PZSM
(W)

IF
(mA)

102

200

(1)

10

100
(2)

1
101

duration (ms)

0
0.6

10

0.8

VF (V)

1.0

(1) Tj = 25 C (prior to surge).

(2) Tj = 150 C (prior to surge).
Tj = 25 C.

Fig.2

Maximum permissible non-repetitive

peak reverse power dissipation
versus duration.

Fig.3

Forward current as a function of forward

voltage; typical values.

MBG927

handbook, full pagewidth

4V3

SZ
(mV/K)

3V9
3V6

3V3
1
3V0

2
2V7
2V4

3
10-3

10-2

10-1

IZ (A)

BZV49-C2V4 to C4V3.
Tj = 25 to 150 C.

Fig.4 Temperature coefficient as a function of working current; typical values.

1996 Apr 26

Philips Semiconductors

Product specification

Voltage regulator diodes

BZV49 series

MBG924

10

handbook, halfpage

SZ
(mV/K)
10
9V1

8V2
7V5
6V8

6V2
5V6
5V1

4V7

12

16

IZ (mA)

20

BZV49-C4V7 to C10.
Tj = 25 to 150 C.

Fig.5

1996 Apr 26

Temperature coefficient as a function of

working current; typical values.

Philips Semiconductors

Product specification

Voltage regulator diodes

BZV49 series

PACKAGE OUTLINE

4.6
4.4
1.8
1.4

handbook, full pagewidth

1.6
1.4

2.6
2.4

0.8
min

0.44
0.37

0.48 (2x)
0.35

0.13 M B M

4.25
3.75

2
0.53
0.40

1.5
3.0

MBC874

Dimensions in mm.

Fig.6 SOT89.

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Apr 26