Q1)

Describe the Newtons method to solve a system of non-linear equations.

To solve the non-linear equation, it is first of all approximated as linear equation by Taylor's expansion.
When non-linear equations with multiple variables then the equation is solved by having that many
number of equations.
While solving 'n' number of non-linear equations of with 'n' number of variables
Procedure:
1) The initial guess has to be some what reasonable and should make the problem to converge.
2) Represent the variables values as a vector.
3) Represent all the equations as a vector.
4) create Jacobian matrix.
5) From Jacobian matrix,equations matrix and initial guess subsequent guesses are made.
Equations are of multiple variables
f 1 ( 1, 2, 3................... n )=0
f 2( 1, 2, 3................... n)=0

.
. And so on
.
f n (1, 2, 3................... n)=0
Here the equations matrix is represent as
f 1 ( 1, 2, 3................... n )
f 2 ( 1, 2, 3................... n )
f ()= f 3 ( 1, 2, 3................... n )
......
......
f n ( 1, 2, 3................... n )
Linear approximations for vectors is done in this fashion.
f ()=f ( 0)+ Df ( 0)(0 )................1

 f 1 ( 0)
1
f 2 ( 0)
Df (0 )= 1
...
f n ( 0 )
1

f 1 ( 0 )
2
f 2 ( 0 )
2
...
f n ( 0 )
2

...
...
...
...

f 1 ( 0 )
n
f 2 ( 0 )
n
...
f n ( 0 )
n

From equation 1 the next iteration is calculated in this manner.

1 =0 (Df (0 )) 1 f ( 0 )

Q2)
Use the above method to solve
x 1+2 x 2=2 ..............1

x 21+ 4 x 22=4 ..............2

Here

2 and take initial approximations as

D Jacobian = 1
2 x1 8 x2
f ( x)=

x 1 +2 x2 2
x 21 +4 x22 4

x1 x1
1 2 1 x 1+2x 22
( )=( ) (
) ( 2 2 )
2
x
8
x
x 2 x 2 initial
x 1+4 x 24
1
2
In the first iteration the values of
In the second iteration values of
In the third iteration values of

x 1=0.5 , x 2=1.25
x 1=0.08333 , x 2=1.04166

x 1=3.205103 , x2 =1.0016

x 1=1 , x 2=1

True values of the variables are obtained in the following way.

By substituting equation '1' in equation '2'
Values of

x 1=0 , x2 =1

The same thing happening with the Newton's method.

approaching to '1'.

x 1 is approaching to '0' and

x 2 is

Q3)
A)
Assuming electrons as the only type of carriers and an undoped semiconductor,
write the appropriate form of poissons equation for electrostatics (assume that the
current is zero, and Maxwell-Boltzmann statistics for carriers).
From the electrostatics the poisson equation is given as

2 =

where

is charge per unit volume , is potential

Initially because of temperature there are electron hole pairs generation and they are in equal in
number.
At equilibrium electron concentration is equal to hole concentration and that is called as intrinsic
electron or hole concentration.
Even by applying electric field the electron hole pairs are generated at certain temperature.
But according to the question here it is assumed that only electrons are generated.
Initially the electrons are assumed to be of number ni and it is intrinsic concentration.
After applying the electric field the number of electrons are going to be

ni e

q i
k BT

Electrostatic Poisson's equation is now

2 =

qni e

q i
kB T

B)
Discretize the above equation such that finite difference method could be used to
solve the same.

Discretizing the above equation

q i
2 kB T

qni h e
i +12 i + i1=

C)
here

i goes from 2 to n-1, and

are also included.

When the equations are written in linearized taylor series then the matrix is

...
0 1
q
1initial value
1 1
q2 ni 2 k T
( ... )=( ... ) (1 2
)
e
....) (
...
kBT
n n initial
0
..
0
1
1

and generalized Jacobian matrix is

...
0 1
q
q 2 ni 2 k T
1 2
e ....
kB T
..
0
1
1

this matrix is 'n' by 'n' matrix.

Qd)
Consider a semiconductor (say, Silicon) of thickness 200m. Assume that one
end (A) is held at at 100mV while the other (B) is held at zero potential. Using a-c
given above, solve for this system using Newtons method. Use a linearly varying
potential profile as the initial guess. Plot the potential and carrier density profiles.

Here the initial values of 200 variables is given by equations

i =500x +0.1
here 'I' is from 1 to 200
Plot:

plot:

Qe)
Repeat (d) for applied biases like 200mV, 400mV, and 600mV. Analyze your
solutions
plots for 200mV

Plots for 400mV

Plots for 600mV

From above graphs it is observed that as the voltage is increased the accumulation of charges at the
edge(x=0) . As we go away from the edge the charge concentration is same for all the
voltages(0.1,0.2,0.4,0.6). This indicates that even though the decrement is same for all voltages away
from the edge the increment in charge particles at edge becoming prominent as the voltage is
increased. The additional number of charge particles are supplied by source when we consider the
semiconductor is grounded. Ground acts like a negative potential souce.
CODE FOR 200mV
clear all
clear all
close all
L=2*10^-4;
nx=200;
p=linspace(0,L,nx);
dx=p(nx-1)-p(nx-2);
A=zeros(nx,nx);
rhs=zeros(nx,1);
z=zeros(nx,1);
y=zeros(nx,1);
k=(dx^2)*8.95*10^8;
for i=1:nx
z(i,1)=-500*p(i)+0.1;
end
for i=2:nx-1
rhs(i,1)=z(i+1,1)-2*z(i,1)+z(i-1,1)-((dx^2)*2.3198*10^7)*(exp(38.68168*z(i,1)));
end
rhs(1,1)=z(1,1)-0.2;
rhs(nx,1)=z(nx,1);
count=0;
for i=1:nx
if(abs(rhs(i,1))>0.00000001)
count=count+1;
end
end
fprintf('%d',count);
while (count>10)
count=0;
for i=2:nx-1
A(i,i)=-2-k*exp(38.68168*z(i,1));
A(i,i-1)=1;
A(i,i+1)=1;
end
A(1,1)=1;
A(nx,nx)=1;
for i=2:nx-1
rhs(i,1)=z(i+1,1)-2*z(i,1)+z(i-1,1)-((dx^2)*2.3198*10^7)*(exp(38.68168*z(i,1)));
end
rhs(1,1)=z(1,1)-0.2;
rhs(nx,1)=z(nx,1);
for i=1:nx
if(abs(rhs(i,1))>0.000001)

count=count+1;
end
end
z=z- inv(A)*rhs;
end
for i=1:nx
y(i,1)=1.5*10^16*exp(38.68168*z(i,1));
end
%plot(p,z);
plot(p,y);
grid on;
xlabel('distance');
ylabel('particle density');
%ylabel('potential');

CODE FOR 400mV

clear all
clear all
close all
L=2*10^-4;
nx=200;
p=linspace(0,L,nx);
dx=p(nx-1)-p(nx-2);
A=zeros(nx,nx);
rhs=zeros(nx,1);
z=zeros(nx,1);
y=zeros(nx,1);
k=(dx^2)*8.95*10^8;
for i=1:nx
z(i,1)=-500*p(i)+0.1;
end
for i=2:nx-1
rhs(i,1)=z(i+1,1)-2*z(i,1)+z(i-1,1)-((dx^2)*2.3198*10^7)*(exp(38.68168*z(i,1)));
end
rhs(1,1)=z(1,1)-0.4;
rhs(nx,1)=z(nx,1);
count=0;
for i=1:nx
if(abs(rhs(i,1))>0.00000001)
count=count+1;
end
end
fprintf('%d',count);
while (count>10)
count=0;
for i=2:nx-1
A(i,i)=-2-k*exp(38.68168*z(i,1));
A(i,i-1)=1;
A(i,i+1)=1;
end
A(1,1)=1;
A(nx,nx)=1;
for i=2:nx-1

rhs(i,1)=z(i+1,1)-2*z(i,1)+z(i-1,1)-((dx^2)*2.3198*10^7)*(exp(38.68168*z(i,1)));
end
rhs(1,1)=z(1,1)-0.4;
rhs(nx,1)=z(nx,1);
for i=1:nx
if(abs(rhs(i,1))>0.000001)
count=count+1;
end
end
z=z- inv(A)*rhs;
end
for i=1:nx
y(i,1)=1.5*10^16*exp(38.68168*z(i,1));
end
%plot(p,z);
plot(p,y);
grid on;
xlabel('distance');
ylabel('particle density');
%ylabel('potential');

CODE FOR 600mV

clear all
clear all
close all
L=2*10^-4;
nx=200;
p=linspace(0,L,nx);
dx=p(nx-1)-p(nx-2);
A=zeros(nx,nx);
rhs=zeros(nx,1);
z=zeros(nx,1);
y=zeros(nx,1);
k=(dx^2)*8.95*10^8;
for i=1:nx
z(i,1)=-500*p(i)+0.1;
end
for i=2:nx-1
rhs(i,1)=z(i+1,1)-2*z(i,1)+z(i-1,1)-((dx^2)*2.3198*10^7)*(exp(38.68168*z(i,1)));
end
rhs(1,1)=z(1,1)-0.6;
rhs(nx,1)=z(nx,1);
count=0;
for i=1:nx
if(abs(rhs(i,1))>0.00000001)
count=count+1;
end
end
fprintf('%d',count);
while (count>10)
count=0;
for i=2:nx-1

A(i,i)=-2-k*exp(38.68168*z(i,1));
A(i,i-1)=1;
A(i,i+1)=1;
end
A(1,1)=1;
A(nx,nx)=1;
for i=2:nx-1
rhs(i,1)=z(i+1,1)-2*z(i,1)+z(i-1,1)-((dx^2)*2.3198*10^7)*(exp(38.68168*z(i,1)));
end
rhs(1,1)=z(1,1)-0.6;
rhs(nx,1)=z(nx,1);
for i=1:nx
if(abs(rhs(i,1))>0.000001)
count=count+1;
end
end
z=z- inv(A)*rhs;
end
for i=1:nx
y(i,1)=1.5*10^16*exp(38.68168*z(i,1));
end
%plot(p,z);
plot(p,y);
grid on;
xlabel('distance');
ylabel('particle density');
%ylabel('potential');

Qf)

Assume that SiO 2 of thickness 20nm is deposited at the end A and the potential is
applied across the SiO2 and the Semiconductor. Modify your code in (d) and find
the carrier density profiles inside the semiconductor for an applied bias of 1V.
Comment on your results.
PLOT:
POTENTIAL VS DISTANC:

From above graph the potential across the oxide changes linearly. And from the graph it is
observed that the voltage drop across the oxide is approximately 0.13 V. so the remaining
voltage is going to drop across semiconductor and the charge particles at the edge will be more
compared to earlier voltages(0.1,0.2,0.4,0.6).