SVF7N65T/F_Datasheet

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION
SVF7N65T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

FEATURES
7A,650V,RDS(on)(typ)=1.1 @VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability

NOMENCLATURE

Silan VDMOS Code

of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel

Package information.
Example:T:TO-220;F:TO-220F.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure

ORDERING INFORMATION
Part No.

Package

Marking

Material

Packing

SVF7N65T

TO-220-3L

SVF7N65T

Pb free

Tube

SVF7N65F

TO-220F-3L

SVF7N65F

Pb free

Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2011.02.15
Page 1 of 8

SVF7N65T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics

Ratings

Symbol

Unit

SVF7N65F

SVF7N65T

Drain-Source Voltage

VDS

650

Gate-Source Voltage

VGS

30

TC = 25C

Drain Current

7.0

ID

TC = 100C

Drain Current Pulsed

IDM

Power Dissipation(TC=25C)

28

PD

-Derate above 25C

Single Pulsed Avalanche Energy (Note 1)

4.0

145

46

1.16

0.37

W/C

EAS

435

mJ

Operation Junction Temperature Range

TJ

-55+150

Storage Temperature Range

Tstg

-55+150

THERMAL CHARACTERISTICS
Characteristics

Ratings

Symbol

SVF7N65T

SVF7N65F

Unit

Thermal Resistance, Junction-to-Case

RJC

0.86

2.7

C/W

Thermal Resistance, Junction-to-Ambient

RJA

62.5

120

C/W

ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)

Characteristics

Symbol

Drain -Source Breakdown Voltage

BVDSS

Drain-Source Leakage Current

Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance

Min.

Typ.

Max.

Unit

VGS=0V, ID=250A

650

--

--

IDSS

VDS=650V, VGS=0V

--

--

10

IGSS

VGS=30V, VDS=0V

--

--

100

nA

VGS(th)

VGS= VDS, ID=250A

2.0

--

4.0

RDS(on)

VGS=10V, ID=3.5A

--

1.1

1.4

--

917.7

--

--

98.6

--

--

1.90

--

--

29.00

--

--

48.00

--

--

39.00

--

--

33.00

--

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

td(on)

Turn-on Rise Time

tr

Turn-off Delay Time

td(off)

Test conditions

VDS=25V,VGS=0V,
f=1.0MHZ

VDD=10V, RG=25, ID=7.0A

(Note 2,3)

Turn-off Fall Time

tf

Total Gate Charge

Qg

VDS=520V, ID=7.0A,

--

15.50

--

Gate-Source Charge

Qgs

VGS=10V

--

5.40

--

Gate-Drain Charge

Qgd

--

4.50

--

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

(Note 2,3)

REV:1.1

pF

ns

nC

2011.02.15
Page 2 of 8

SVF7N65T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics

Symbol

Test conditions

Min.

Typ.

Max.

--

--

7.0

--

--

28.0

Unit

Continuous Source Current

IS

Pulsed Source Current

ISM

Diode Forward Voltage

VSD

IS=7.0A,VGS=0V

--

--

1.4

Reverse Recovery Time

Trr

IS=7.0A,VGS=0V,

--

365

--

ns

Qrr

dIF/dt=100A/S(Note 2)

--

3.4

--

Reverse Recovery Charge

Integral

Reverse

Junction

Diode

in

P-N
the

MOSFET

Notes:
1.

L=30mH, IAS=5.0A, VDD=100V, RG=25,starting TJ=25C;

2. Pulse Test: Pulse width 300s, Duty cycle2%;

3. Essentially independent of operating temperature.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2011.02.15
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SVF7N65T/F_Datasheet
TYPICAL CHARACTERISTICS

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2011.02.15
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SVF7N65T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2011.02.15
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SVF7N65T/F_Datasheet
TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

50K

Qg

10V

VDS

200nF

12V

VGS

Same Type
as DUT
300nF

Qgs

Qgd

VGS
DUT
3mA

Charge

Resistive Switching Test Circuit & Waveform

RL

VDS

VDS
90%

VGS
VDD
RG
DUT

10%

VGS

10V

td(on)

tr
ton

td(off)

tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

EAS =

VDS

BVDSS
1
2
2 LIAS BVDSS - VDD

BVDSS
ID

IAS

RG
DUT
10V

ID(t)

VDD

tp

VDS(t)

VDD

Time

tp

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2011.02.15
Page 6 of 8

SVF7N65T/F_Datasheet
PACKAGE OUTLINE
TO-220-3L

UNIT: mm

TO-220F-3L

UNIT: mm

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2011.02.15
Page 7 of 8

SVF7N65T/F_Datasheet
Disclaimer:

Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.

All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.

Silan will supply the best possible product for customers!

ATTACHMENT
Revision History
Date

REV

2010.12.13

1.0

2011.02.15

1.1

Description
Original
Modify ABSOLUTE MAXIMUM RATINGS and ELECTRICAL
CHARACTERISTICS

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

Page

REV:1.1

2011.02.15
Page 8 of 8