Register No.

B.E. / B.Tech. DEGREE MODEL EXAMINATION, MAY 2013

DATE : 18.05.2013
Second Semester
Computer Science and Engineering
(Common to all Branches)
PH2161 ENGINEERING PHYSICS II
Time : Three hours

Maximum : 100 marks

Answer ALL questions

Part A - (10 x 2 = 20)
1.
2.

3.

4.

5.
6.
7.

8.
9.
10.

State Wiedemann-Franz law.

Define Fermi function. Draw a graph showing its variation with energy at
different temperatures.
Silicon has a conductivity of only 5 x 10-4 -1m-1 in its pure form. To have the
conductivity of 200 -1m-1 it is doped with p-type impurity. Calculate the
impurity concentration. Given h= 0.05 m2/Vs.
How does Fermilevel change with impurity concentration in extrinsic
semiconductor?
What are ferrites? Give examples.
Explain Meissner effect.
The radius of hydrogen atom is 0.053nm. Calculate its electronic
polarizability.
What are polar and non polar dielectrics?
State the properties of metallic glasses.
How CNT is produced employing CVD?
Part B (5 x 16 = 80 marks)

11.

(a) (i) Based on classical theory derive an expression for electrical and
thermal conductivity
(14)
(ii) Mention any two drawbacks of classical free electron theory.
or
(b) Derive an expression for the density of states and based on that
calculate the carrier concentration in metals.

(2)

(16)

12.(a) (i) Derive an expression for the density of electrons in N-type

semiconductor.
(12)
(ii) There are 1020 electrons per m3 in a material having a resistivity of
0.1 m. Find the charge mobility and electrical field needed to produce a
drift velocity of 1 m/s.
(4)

or
(b) (i) Derive an expression for Hall coefficient in a n-type semiconductor .(12)
(ii) A 2.0 cm wide and 1.0cm thick copper strip is placed in a magnetic field
with B = 2.0 weber/m2 perpendicular to the strip. What Hall potential
difference will appear across the strip when a current of 200 A is set up
in the strip? Assume R H 6 X 10

m3

(4)
13.(a) (i) Based on domain theory explain the hysteresis behavior in
ferromagnetic materials.

(12)

(ii) What are soft and hard magnetic materials.

(4)

or
(b) (i) Explain typeI and typeII superconductors.
(ii) Explain in detail how data is stored in magnetic disk drive.

(6)
(10)

.
14. (a) (i) What is meant by internal field in dielectrics and how is it calculated
for a cubic structure?
(10)
(ii) Discuss different types of polarization mechanisms in dielectric
materials.
(6)
or
(b) What is ferroelectricity? Explain in detail the properties and
applications of ferroelectric materials.
(16)
15. (a) (i) Write notes on Shape memory effect and Ni-Ti alloys.

(8)

(ii) Explain the important properties and applications of carbon

nanotubes.
(8)
or
(b) Explain the synthesis of nanoparticles using chemical vapour deposition
and sol-gel method. How is chemical method different from physical
method of synthesis?
(16)