2SK3569

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3569
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.54 (typ.)

High forward transfer admittance: |Yfs| = 8.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

600

Drain-gate voltage (RGS = 20 k)

VDGR

600

Gate-source voltage

VGSS

30

(Note 1)

ID

10

Pulse (t = 1 ms)
(Note 1)

IDP

40

Drain power dissipation (Tc = 25C)

PD

45

Single pulse avalanche energy

(Note 2)

EAS

363

mJ

Avalanche current

IAR

10

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

-55~150

DC
Drain current

A
1: Gate
2: Drain
3: Source

JEDEC

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 6.36 mH, IAR = 10 A, RG = 25

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.
3

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2SK3569
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Typ.

Max

Unit

IGSS

VGS = 25 V, VDS = 0 V

10

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 600 V, VGS = 0 V

100

Drain cut-off current

Drain-source breakdown voltage

Min

V (BR) GSS

Gate leakage current

Gate-source breakdown voltage

Test Condition

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Gate threshold voltage

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 5 A

0.54

0.75

Forward transfer admittance

Yfs

VDS = 10 V, ID = 5 A

0.7

8.5

Input capacitance

Ciss

1500

Reverse transfer capacitance

Crss

15

Output capacitance

Coss

180

VOUT

22

RL =
40

50

36

180

42

23

19

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton

50

Switching time
Fall time

ID = 5 A

10 V
VGS
0V

tr

tf

Turn-off time

VDD
200 V
Duty <
= 1%, tw = 10 s

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD
400 V, VGS = 10 V, ID = 10 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

10

(Note 1)

IDRP

40

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

IDR = 10 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 10 A, VGS = 0 V,

1300

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

16

Marking

K3569

TYPE

Lot Number

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2SK3569

ID VDS

ID VDS
5.3

ID
DRAIN CURRENT

(A)

10,8

4.8
6
4.6
4
4.4
4.2

10
5.1

6
16

COMMON SOURCE
Tc = 25C
PULSE TEST

5.5

ID

COMMON SOURCE
Tc = 25C
PULSE TEST

20

DRAIN CURRENT

(A)

10

5.25
12
5
8

4.75
4.5

VGS = 4 V

VGS = 4V
0
0

DRAIN-SOURCE VOLTAGE

VDS

0
0

10

(V)

10

20

ID VGS
(V)
VDS

PULSE TEST

DRAIN-SOURCE VOLTAGE

DRAIN CURRENT

ID

(A)

VDS = 20 V

12

8
Tc = 55C
100
25
0
0

GATE-SOURCE VOLTAGE

VGS

10

COMMON SOURCE
Tc = 25
8

PULSE TEST

ID = 10 A

2.5
0
0

25
100

1
COMMON SOURCE
VDS = 20 V
PULSE TEST
10

ID

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

Tc = 55C

DRAIN CURRENT

16

VGS

20

(V)

RDS (ON) ID
10

12

GATE-SOURCE VOLTAGE

Yfs ID

0.1
0.1

(V)

10

(V)

100

10

VDS

50

VDS VGS

COMMON SOURCE

40

DRAIN-SOURCE VOLTAGE

20

16

30

100

(A)

COMMON SOURCE
Tc = 25C
PULSE TEST

0.1
0.1

VGS = 10 V15V

DRAIN CURRENT

10

ID

100

(A)

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2SK3569

RDS (ON) Tc

IDR VDS
100

PULSE TEST
2.0
ID = 12A
1.5
6
1.0

3
VGS = 10 V

0.5

0
80

40

COMMON SOURCE

IDR

COMMON SOURCE

DRAIN REVERSE CURRENT

(A)

40

80

CASE TEMPERATURE

120

Tc

Tc = 25C
PULSE TEST
10

1
10
5

1
0.1
0

160

(C)

0.2

0.4

GATE THRESHOLD VOLTAGE

Vth (V)

1000

VDS

1.2

(V)

Coss
100

Crss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
1

10

DRAIN-SOURCE VOLTAGE

2
COMMON SOURCE
1

(V)

(V)
VDS
DRAIN-SOURCE VOLTAGE

60

40

20

120

CASE TEMPERATURE

40

40

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

80

80

ID = 1 mA

CASE TEMPERATURE

PD Tc

40

VDS = 10 V
PULSE TEST

0
80

100

VDS

160

Tc

200

(C)

500

20

400

16

VDS
VDD = 100 V

300

12
200

200

COMMON SOURCE
VGS

100

ID = 3 A

Tc = 25C
PULSE TEST
0
0

10

20

30

TOTAL GATE CHARGE

400

40

50

Qg

0
60

(V)

1
0.1

VGS

(pF)

1.0

5
Ciss

CAPACITANCE

0.8

Vth Tc

CAPACITANCE VDS

DRAIN POWER DISSIPATION

PD (W)

0.6

DRAIN-SOURCE VOLTAGE

10000

0
0

VGS = 0, 1 V

GATE-SOURCE VOLTAGE

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( )

2.5

(nC)

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2SK3569

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty=0.5
0.2

0.1

0.1
0.05
PDM

0.02

t
0.01

0.01

0.001
10

SINGLE PULSE

100

Duty = t/T
Rth (ch-c) = 2.78C/W
10

PULSE WIDTH

100

tw

10

(s)

EAS Tch

SAFE OPERATING AREA

500

100
ID max (PULSED) *

DRAIN CURRENT

AVALANCHE ENERGY
EAS (mJ)

10

ID max (CONTINUOUS) *

1 ms *

ID

(A)

100 s *

0.1

DC OPERATION
Tc = 25C

LINEARLY

0.01
1

BE

WITH

DERATED

INCREASE

IN

200

100

50

75

125

150

VDSS max

TEMPERATURE.

10

100

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

Tc=25
MUST

300

0
25

SINGLE NONREPETITIVE PULSE

CURVES

400

100

DRAIN-SOURCE VOLTAGE

15 V

1000

VDS

(V)

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 6.36mH

VDS

WAVE FORM
AS =

1
B VDSS

L I2
B

2
V
VDSS
DD

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2SK3569

RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

2004-03-04

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