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(a) Transfer-resistor
(b) Trans-resistor
(c) Tri-resistor
4. BJT is a _____ device.
(a) Unipolar
(b) Bipolar
(c) Multipolar.
5. In Unipolar transistor, the current conduction is due to ____
(a) Minority carriers
(b) Majority carriers
(c) Both minority & majority carriers
6. In bipolar transistor, the current is due to _____
(a) Holes
(b) Electrons
(c) Both Holes & electrons
7. BJT is _____ controlled device.
(a)
(b)
(c)
(d)
Field
Voltage
Resistor
Current
8. The types of bipolar junction transistor are.
(a) Ppn, npn
(b) pnp,npn
(C) Npp,ppn
(d) nnp,pnp
(a)
(b)
(c)
(d)
(c) Lightly
21. Barrier voltage is ___ on the N side.
(a) Positive
(b) Negative
(c) Zero
22. __ of electrons and holes in the base region constitutes the base current.
(a) Ionization
(b) Recombination
(c) Thermal agitation
23. ___ constitutes the dominant current in a npn transistor.
(a) Holes
(b) Electrons
(c) Both Holes & Electrons
24. ___ is the highest current in any bipolar transistor.
(a) IB
(b) IC
(c) IE
25. The ___ current of a transistor is neither the largest nor the smallest.
(a) Base
(b) Collector
(c) Emitter
26. Which of the following currents are nearly equal to each other
(a)
(b)
(c)
(d)
IB & IC
IE & IC
IB & IE
IB,IC & IE
27. For transistor properly biased PnP transistor let IC=10mA and IE=10.2 mA. What is
the level of IB?
(a) 0.2 mA
(b) 200 mA
(c) 200 UA
(d) 20.2 mA
28. Holes flow constitutes the dominant current in a _____transistor.
(a) Npn
(b) Pnp
(c) Npn & pnp
(a)
(b)
(c)
(d)
29. For operating in the active region the emitter junction should be ___biased and
collector
Junction should be ____biased in BJT.
Forward ,forward
Reverse, reverse
Forward, reverse
Reverse, forward
30. The emitter junction is ___ biased for operating BJT in saturation region.
(a) Forward
(b) Reverse
(c) Zero
31. In which region are both the collector base and base emitter junctions forward
biased for BJT?
(a)
(b)
(c)
(d)
Active
Cut off
Saturation
All of the above
32. For the BJT to operate in the saturation region the base emitter junction must be
____ biased and the base collector junction must be ___biased
(a)
(b)
(c)
(d)
Forward , forward
Forward , reverse
Reverse , reverse
Reverse, forward.
33. At what region of operation is the base emitter junction forward biased and the base
collector
Saturation
Linear or active
Cut-off
None of the above
34. Which of the following configurations can a transistor set up?
(a)
(b)
(c)
(d)
Common base
Common emitter
Common collector
All of the above
35. In CB configuration a reverse biased collector junction IC= ____ when the emitter
Is left open.
(a) 0
(b) IE
(c) ICBO
36. ICBO flows from ___ to ____ when emitter is open.
(a) Collector , Base
(b) Base, Collector
(c) Collector , emitter
37. The ___ carriers constitute current ICBO
(a) Both minority and majority
(b) Minority
(c) Majority
38. ICBO current is ___
(a)
(b)
(c)
(d)
Greater than IC
Increase with temperature
Less than ICO
Flows when base junction is forward biased.
39. with rise in temp ICBO___
(a) Increase linearly
(a)
(b)
(c)
(d)
(a) Smaller
(b) Larger
(c) Constant.
43. The is the current gain of ____ configuration
(a) CB
(b) CC
(c) CE
44. In CB configuration input resistance is ______
(a) VEB/IE
(b) VCB/IE
(c) VCB/IC
45. The input resistance of CB configuration is measured constant ______
(a)
(b)
(c)
(d)
IB
IC
Vcb
Vce
46. The dynamic output resistance of transistor in CB configuration is ___ at constant
IE.
(a) VEB/IE
(b) VEB/IC
(c) VCB/IC