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DESCRIPTION
The 74VHCT00A is an advanced high-speed
CMOS QUAD 2-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C2MOS technology.
M
(Micro Package)
T
(TSSOP Package)
ORDER CODES :
74VHCT00AM
74VHCT00AT
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
August 1999
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74VHCT00A
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
1, 4, 9, 12
1A to 4A
2, 5, 10, 13
1B to 4B
Data Inputs
3, 6, 8, 11
1Y to 4Y
Data Outputs
GND
Ground (0V)
14
VCC
TRUTH TABLE
A
Parameter
Value
Unit
Supply Voltage
-0.5 to +7.0
VI
DC Input Voltage
-0.5 to +7.0
VO
-0.5 to +7.0
VO
VCC
IIK
- 20
mA
IOK
20
mA
IO
DC Output Current
25
mA
50
mA
Storage Temperature
TL
-65 to +150
300
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1) VCC =0V
2) High or Low State
Parameter
4.5 to 5.5
Input Voltage
0 to 5.5
VO
0 to 5.5
VO
Top
Operating Temperature
dt/dv
1) VCC =0V
2) High or Low State
3)VIN from0.8V to 2 V
2/7
Unit
VI
VCC
Supply Voltage
Valu e
0 to VCC
-40 to +85
0 to 20
V
o
ns/V
74VHCT00A
DC SPECIFICATIONS
Symb ol
Parameter
VIH
4.5 to 5.5
VIL
4.5 to 5.5
VOH
VOL
Value
o
Typ .
Un it
o
T A = 25 C
V CC
(V)
-40 to 85 C
Max.
Min .
Max.
2
0.8
V
0.8
4.5
I O =-50 A
4.4
4.5
IO=-8 mA
3.94
4.5
I O=50 A
0.1
0.1
4.5
IO=8 mA
0.36
0.44
4.5
4.4
3.8
0.0
0 to 5.5
VI = 5.5V or GND
0.1
1.0
ICC
Quiescent Supply
Current
5.5
VI = VCC or GND
20
ICC
5.5
1.35
1.5
mA
IOPD
Output Leakage
Current
VOUT = 5.5V
0.5
5.0
II
tPLH
tPHL
Parameter
Propagation Delay
Time
Test Co ndition
V CC (*)
CL
(pF )
(V)
Value
T A = 25 o C
Min.
Un it
-40 to 85 o C
5.0
15
Typ .
5.0
Max.
7.0
Min .
1.0
Max.
8.0
5.0
50
5.5
8.0
1.0
9.0
ns
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Value
o
Min.
C IN
Input Capacitance
CPD
Power Dissipation
Capacitance (note 1)
-40 to 85 C
Typ .
Max.
10
10.5
Un it
o
T A = 25 C
Min .
Max.
10
pF
pF
1) CPD isdefined as the value of the ICsinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD VCC fIN + ICC/4(per Gate)
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74VHCT00A
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
5.0
VIHD
5.0
VILD
5.0
VOLP
VOLV
Value
o
Min.
-0.8
C L = 50 pF
Un it
o
T A = 25 C
V CC
(V)
-40 to 85 C
Typ .
Max.
0.4
0.8
Min .
Max.
-0.4
2.0
V
0.8
TEST CIRCUIT
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74VHCT00A
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
0.5
0.019
c1
45 (typ.)
8.55
8.75
0.336
0.344
5.8
6.2
0.228
0.244
1.27
e3
0.050
7.62
0.300
3.8
4.0
0.149
0.157
4.6
5.3
0.181
0.208
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 (max.)
P013G
5/7
74VHCT00A
DIM.
MIN.
inch
TYP.
MAX.
MIN.
MAX.
1.1
0.433
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
0.85
0.9
0.95
0.335
0.354
0.374
0.19
0.30
0.0075
0.0118
0.09
0.20
0.0035
0.0079
4.9
5.1
0.193
0.197
0.201
6.25
6.4
6.5
0.246
0.252
0.256
E1
4.3
4.4
4.48
0.169
0.173
0.176
0.65 BSC
0.0256 BSC
0o
4o
8o
0o
4o
8o
0.50
0.60
0.70
0.020
0.024
0.028
A2
A1
K
c
E1
PIN 1 IDENTIFICATION
L
E
6/7
TYP.
74VHCT00A
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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