NTD5865NL

N-Channel Power MOSFET

60 V, 46 A, 16 mW
Features

Low Gate Charge

Fast Switching
High Current Capability
100% Avalanche Tested
These Devices are PbFree, Halogen Free and are RoHS Compliant

Value

Unit

DraintoSource Voltage

VDSS

60

GatetoSource Voltage Continuous

VGS

20

GatetoSource Voltage
NonRepetitive (tp < 10 ms)

VGS

30

Steady
State

ID

TC = 100C
TC = 25C

tp = 10 ms

Operating Junction and Storage Temperature

Source Current (Body Diode)
Single Pulse DraintoSource
Avalanche Energy

16 mW @ 10 V

46 A

NChannel
G

TC = 25C

Pulsed Drain Current

ID MAX

(L =
0.1 mH)

Lead Temperature for Soldering Purposes

(1/8 from case for 10 s)

46

33
PD

71

IDM

203

TJ, Tstg

55 to
175

4
1

1 2

IS

46

EAS

36

mJ

IAS

27

TL

260

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2

Symbol

Value

Unit

JunctiontoCase (Drain)

RqJC

2.1

C/W

JunctiontoAmbient Steady State (Note 1)

RqJA

49

1. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3
IPAK
CASE 369D
(Straight Lead)
STYLE 2

MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

AYWW
58
65NLG

Power Dissipation
(RqJC)

RDS(on) MAX

19 mW @ 4.5 V

Symbol

Continuous Drain
Current (RqJC)

V(BR)DSS
60 V

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Parameter

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AYWW
58
65NLG

2
1 Drain 3
Gate Source

1 2 3
Gate Drain Source

A
= Assembly Location*
Y
= Year
WW
= Work Week
5865NL = Device Code
G
= PbFree Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.

ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.

Semiconductor Components Industries, LLC, 2014

September, 2014 Rev. 4

Publication Order Number:

NTD5865NL/D

NTD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Symbol

Test Condition

Min

DraintoSource Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

DraintoSource Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

Parameter

Typ

Max

Unit

OFF CHARACTERISTICS
V
55
TJ = 25C

Zero Gate Voltage Drain Current

IDSS

GatetoSource Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

VGS(TH)

VGS = VDS, ID = 250 mA

VGS = 0 V,
VDS = 60 V

mV/C
1.0

TJ = 150C

mA

100
100

nA

2.0

ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient

VGS(TH)/TJ

1.0
5.6

mV/C

DraintoSource on Resistance

RDS(on)

VGS = 10 V, ID = 20 A

13

16

mW

DraintoSource on Resistance

RDS(on)

VGS = 4.5 V, ID = 20 A

16

19

mW

gFS

VDS = 15 V, ID = 20 A

15

1400

pF

Forward Transconductance

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

95

Total Gate Charge

QG(TOT)

29

Threshold Gate Charge

QG(TH)

GatetoSource Charge

QGS

GatetoDrain Charge
Total Gate Charge
Gate Resistance

137
nC

VGS = 10 V, VDS = 48 V,
ID = 40 A

1.1

VGS = 4.5 V, VDS = 48 V,

ID = 40 A

15

nC

1.3

td(on)

8.4

ns

tr

12.4

QGD
QG(TOT)

4
8

RG

SWITCHING CHARACTERISTICS (Note 3)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time

td(off)

VGS = 10 V, VDD = 48 V,
ID = 40 A, RG = 2.5 W

tf

26
4.4

DRAINSOURCE DIODE CHARACTERISTICS

TJ = 25C

0.95

TJ = 125C

0.85

Forward Diode Voltage

VSD

Reverse Recovery Time

tRR

20

Charge Time

ta

13

Discharge Time

tb

Reverse Recovery Charge

VGS = 0 V,
IS = 40 A

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 40 A

QRR

1.2

V
ns

7
13

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.

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2

NTD5865NL
TYPICAL CHARACTERISTICS
80
3.8 V
3.6 V

50
3.4 V
40
3.2 V

30
20

3V

10

2.8 V

30

TJ = 25C

20

TJ = 125C
1

TJ = 55C

VGS, GATETOSOURCE VOLTAGE (V)

Figure 1. OnRegion Characteristics

Figure 2. Transfer Characteristics

ID = 40 A
TJ = 25C

0.025

0.020

0.015

0.010
3

10

0.018
TJ = 25C
VGS = 4.5 V

0.016

0.014
VGS = 10 V
0.012

0.010
5

10

15

20

25

30

35

VGS, GATETOSOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 3. OnResistance vs. Gate Voltage

Figure 4. OnResistance vs. Drain Current

40

10000

2.2
2.0

40

VDS, DRAINTOSOURCE VOLTAGE (V)

0.030

50

ID = 38 A
VGS = 10 V

VGS = 0 V
TJ = 150C

1.8

IDSS, LEAKAGE (nA)

RDS(on), DRAINTOSOURCE RESISTANCE (W)

60

10

2.6 V

RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

ID, DRAIN CURRENT (A)

4.5 V
60

VDS 10 V

70

TJ = 25C

RDS(on), DRAINTOSOURCE RESISTANCE (W)

ID, DRAIN CURRENT (A)

70

80
4V

VGS = 10 V

1.6
1.4
1.2
1.0

1000
TJ = 125C

0.8
0.6
50

100
25

25

50

75

100

125

150 175

10

20

30

40

50

TJ, JUNCTION TEMPERATURE (C)

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 5. OnResistance Variation with

Temperature

Figure 6. DraintoSource Leakage Current

vs. Voltage

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3

60

NTD5865NL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25C

1600
Ciss

C, CAPACITANCE (pF)

1400

VGS, GATETOSOURCE VOLTAGE (V)

1800

1200
1000
800
600
400
Coss

200
Crss

0
0

10

20

30

40

50

60

Qgs

Qgd

VDS = 48 V
ID = 40 A
TJ = 25C

0
0

10

15

20

25

VDS, DRAINTOSOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. GatetoSource vs. Total Charge

1000

30

40
VDD = 48 V
ID = 40 A
VGS = 10 V

IS, SOURCE CURRENT (A)

td(off)
tr

10

VGS = 0 V

35

100

td(on)

tf

10

TJ = 25C

30
25
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00

1
100

RG, GATE RESISTANCE (W)

VSD, SOURCETODRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

ID, DRAIN CURRENT (A)

t, TIME (ns)

QT

100

VGS = 10 V
SINGLE PULSE
TC = 25C

100 ms

10 ms

10 ms

1 ms

10
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1

10

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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4

100

NTD5865NL
TYPICAL CHARACTERISTICS

RqJC(t) (C/W) EFFECTIVE TRANSIENT

THERMAL RESISTANCE

10

Duty Cycle = 0.5

1

0.1

0.2
0.1
0.05
0.02
0.01
SINGLE PULSE

0.01
0.000001

0.00001

0.0001

0.001

0.01

0.1

t, PULSE TIME (s)

Figure 12. Thermal Response

ORDERING INFORMATION
Package

Shipping

NTD5865NL1G

IPAK (Straight Lead)

(PbFree)

75 Units / Rail

NTD5865NLT4G

DPAK
(PbFree)

2500 / Tape & Reel

Order Number

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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5

NTD5865NL
PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

A
A

E
b3

c2

L3

D
1

DETAIL A

L4
b2
e

b
0.005 (0.13)

H
L2

GAUGE
PLANE

C
L

SEATING
PLANE

A1

L1
DETAIL A
ROTATED 905 CW

SOLDERING FOOTPRINT*
6.20
0.244

2.58
0.102

5.80
0.228

INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
0.040
0.155

STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

3.00
0.118

1.60
0.063

DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z

6.17
0.243

SCALE 3:1

mm
inches

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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6

MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27

1.01
3.93

NTD5865NL
PACKAGE DIMENSIONS

IPAK
CASE 369D
ISSUE C
C

B
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

R
4

Z
A

T
SEATING
PLANE

H
D
G

DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z

INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155

MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93

3 PL

0.13 (0.005)

STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

ON Semiconductor and the

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each
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For additional information, please contact your local
Sales Representative

NTD5865NL/D